公开(公告)号：US11264213B2

公开(公告)日：2022-03-01

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/40 ,  H01J37/32 ,  B05B1/00 ,  C23C16/455 ,  C23C16/452 ,  B05B1/18 ,  C23C16/50 ,  H01L21/67

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20190139743A1

公开(公告)日：2019-05-09

申请号：US16236991

申请日：2018-12-31

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/455

Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.

公开(公告)号：US10056233B2

公开(公告)日：2018-08-21

申请号：US15635410

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

公开(公告)号：US09741545B2

公开(公告)日：2017-08-22

申请号：US15359186

申请日：2016-11-22

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC: H01L21/00 ,  H01J37/32 ,  C23C16/452 ,  C23C16/455 ,  C23C16/505 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

公开(公告)号：US09704723B2

公开(公告)日：2017-07-11

申请号：US14936448

申请日：2015-11-09

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/3105 ,  H01L21/268 ,  H01L21/677 ,  H01L21/263 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09659792B2

公开(公告)日：2017-05-23

申请号：US14808904

申请日：2015-07-24

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/3105 ,  H01L21/268 ,  H01L21/677 ,  H01L21/263 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09524889B2

公开(公告)日：2016-12-20

申请号：US14202763

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Steve S. Hongkham ,  Paul B. Reuter ,  Eric A. Englhardt ,  Ganesh Balasubramanian ,  Xinglong Chen ,  JuanCarlos Rocha-Alvarez

IPC: B01J19/00 ,  H01L21/67

CPC classification number: H01L21/67184 ,  Y10T137/0318 ,  Y10T137/86187

Abstract: A via pass-through apparatus is disclosed. The via pass-through apparatus includes a pass-through chamber adapted to couple between a first mainframe section and a second mainframe section of a substrate processing system, the pass-through chamber including an entry and an exit each having a slit valve, and a via process chamber located at a different level than the pass-through chamber wherein the via process chamber is adapted to carry out a process on a substrate at the via location. Systems and methods of operating the system are provided, as are numerous other aspects.

Abstract translation: 公开了一种通孔传送装置。 通孔穿通装置包括适于联接在基板处理系统的第一主机部分和第二主机部分之间的通过室，所述通过室包括每个具有狭缝阀的入口和出口，以及 通过处理室位于与通过室不同的水平，其中通孔处理室适于在通孔位置处在基板上执行处理。 提供了操作系统的系统和方法，以及许多其它方面。

公开(公告)号：US09362130B2

公开(公告)日：2016-06-07

申请号：US14186059

申请日：2014-02-21

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

公开(公告)号：US20160126118A1

公开(公告)日：2016-05-05

申请号：US14996621

申请日：2016-01-15

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract translation: 对半导体处理装置的基板支撑组件进行说明。 组件可以包括底座和与底座联接的杆。 基座可以被配置成提供具有独立控制的温度的多个区域。 每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。 流体通道可以包括以平行逆流装置构造的多个部分。 基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。

公开(公告)号：US20140141621A1

公开(公告)日：2014-05-22

申请号：US13834206

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。