公开(公告)号：US12136536B2

公开(公告)日：2024-11-05

申请号：US16970110

申请日：2019-02-28

Applicant: Applied Materials, Inc.

Inventor： Edward P. Hammond, IV ,  Jonghoon Baek

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509 ,  H01L21/683 ,  H01L21/67

Abstract: The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20140141621A1

公开(公告)日：2014-05-22

申请号：US13834206

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US20140057447A1

公开(公告)日：2014-02-27

申请号：US13829669

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Abstract translation: 描述了包括处理室的半导体处理系统。 处理室可以包括盖组件，栅格电极，导电插入件和接地电极。 每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。 每个部件可以通过定位多个绝缘部件而被电隔离。 一个或多个电源可以利用开关机构与处理室电耦合。 开关可以切换以将一个或多个电源电耦合到处理室的组件。

公开(公告)号：US09827578B2

公开(公告)日：2017-11-28

申请号：US14726067

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

IPC: B05B1/18 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

公开(公告)号：US09373517B2

公开(公告)日：2016-06-21

申请号：US13829669

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01L21/67 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Abstract translation: 描述了包括处理室的半导体处理系统。 处理室可以包括盖组件，栅格电极，导电插入件和接地电极。 每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。 每个部件可以通过定位多个绝缘部件而被电隔离。 一个或多个电源可以利用开关机构与处理室电耦合。 开关可以切换以将一个或多个电源电耦合到处理室的组件。

公开(公告)号：US20150132968A1

公开(公告)日：2015-05-14

申请号：US14602835

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US11908662B2

公开(公告)日：2024-02-20

申请号：US16663215

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Edward P. Hammond, IV ,  Jonghoon Baek ,  Amit Kumar Bansal ,  Jun Ma ,  Satoru Kobayashi

IPC: H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  C23C16/505

CPC classification number: H01J37/32467 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715 ,  H01J2237/24564 ,  H01J2237/3321

Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

公开(公告)号：US11339475B2

公开(公告)日：2022-05-24

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Deenesh Padhi ,  Daemian Raj Benjamin Raj ,  Kristopher Enslow ,  Wenjiao Wang ,  Masaki Ogata ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Jonghoon Baek ,  Zakaria Ibrahimi ,  Juan Carlos Rocha-Alvarez ,  Tza-Jing Gung

IPC: C23C16/505 ,  C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/34 ,  H01J37/32 ,  C23C16/40

Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US10032606B2

公开(公告)日：2018-07-24

申请号：US15187211

申请日：2016-06-20

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: C23C16/503 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

公开(公告)号：US09892888B2

公开(公告)日：2018-02-13

申请号：US15587129

申请日：2017-05-04

Applicant: Applied Materials, Inc.

Inventor： Jonghoon Baek ,  Soonam Park ,  Xinglong Chen ,  Dmitry Lubomirsky

IPC: C23C16/50 ,  H05H1/24 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.