公开(公告)号：US10269633B2

公开(公告)日：2019-04-23

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20190088489A1

公开(公告)日：2019-03-21

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US10199230B2

公开(公告)日：2019-02-05

申请号：US14790862

申请日：2015-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Seshadri Ganguli ,  Yixiong Yang ,  Bhushan N. Zope ,  Xinyu Fu ,  Avgerinos V. Gelatos ,  Guoqiang Jian ,  Bo Zheng

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

公开(公告)号：US09947578B2

公开(公告)日：2018-04-17

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Yu Lei ,  Vikash Banthia ,  Kai Wu ,  Xinyu Fu ,  Yi Xu ,  Kazuya Daito ,  Feiyue Ma ,  Pulkit Agarwal ,  Chi-Chou Lin ,  Dien-Yeh Wu ,  Guoqiang Jian ,  Wei V. Tang ,  Jonathan Bakke ,  Mei Chang ,  Sundar Ramamurthy

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/311 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/505 ,  C23C16/54

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20170194156A1

公开(公告)日：2017-07-06

申请号：US15461842

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/02 ,  C23C16/42 ,  H01L21/3205 ,  C23C16/455

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09685371B2

公开(公告)日：2017-06-20

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

IPC: H01L21/768 ,  H01L21/20 ,  H01L21/203 ,  H01L21/14 ,  H01L21/285 ,  C23C16/18

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US09601339B2

公开(公告)日：2017-03-21

申请号：US14965349

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09230835B2

公开(公告)日：2016-01-05

申请号：US14211156

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Avgerinos V. Gelatos ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Xinyu Fu ,  Bo Zheng ,  Yu Lei

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/285 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/6723 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/6719 ,  H01L21/67207 ,  H01L29/4958 ,  H01L29/4966

Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).

Abstract translation: 本文提供了用于制造n型金属氧化物半导体（NMOS）器件的集成平台的实施例。 在一些实施例中，用于制造n型金属氧化物半导体（NMOS）器件的集成平台可以包括第一沉积室，其被配置为在衬底顶部沉积第一层，第一层包含氧化钛（TiO 2）或硒（Se）; 第二沉积室，被配置为在所述第一层顶部沉积第二层，所述第二层包含钛; 第三沉积室，被配置为在所述第二层顶部沉积第三层，所述第三层包括氮化钛（TiN）或氮化钨（WN）之一。