Method for producing a TFA image sensor and one such TFA image sensor
    22.
    发明授权
    Method for producing a TFA image sensor and one such TFA image sensor 有权
    用于生产TFA图像传感器和一个这样的TFA图像传感器的方法

    公开(公告)号:US07326589B2

    公开(公告)日:2008-02-05

    申请号:US11271492

    申请日:2005-11-11

    IPC分类号: H01L21/00

    摘要: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.

    摘要翻译: 本发明涉及一种制造TFA图像传感器的方法,其中包括光电二极管阵列的多层布置被布置在ASIC切换电路上,该ASIC开关电路设置有用于操作TFA图像传感器的电子电路,例如像素电子器件,外围电子器件和 系统电子器件,用于将电磁辐射像素地转换成强度依赖的光电流,像素连接到ASIC开关电路的底层像素电子器件的触点。 该方法能够在不损害光敏传感器表面的形貌的情况下使用常规生产的ASIC切换电路。 去除光致活性区域中的CMOS钝化层,然后去除上部CMOS金属化的CMOS钝化层,并由构成像素栅格的金属层代替以形成背面电极。 然后施加和构造光电二极管矩阵,所述光电二极管矩阵被实现为像素矩阵,其上可以应用具有钝化作用的钝化保护层和/或滤色器层。

    Method for manufacture of thip
    23.
    发明申请
    Method for manufacture of thip 失效
    制造勺子的方法

    公开(公告)号:US20070112198A1

    公开(公告)日:2007-05-17

    申请号:US10570551

    申请日:2004-09-01

    IPC分类号: C07D491/02

    CPC分类号: C07D498/04

    摘要: The present invention relates to a new method of preparing gaboxadol (THIP), which is useful for treating sleep disorders. In particular a method of preparing THIP comprising reacting a compound of formula (8b) or a salt thereof with an acid, typically a mineral acid, to obtain THIP as an acid addition salt. The present invention also relates to several intermediates.

    摘要翻译: 本发明涉及一种制备加波沙朵(THIP)的新方法,其可用于治疗睡眠障碍。 特别是制备THIP的方法,包括使式(8b)的化合物或其盐与酸(通常为无机酸)反应,得到THIP作为酸加成盐。 本发明还涉及几种中间体。

    Semiconductor component with a MOS transistor
    24.
    发明申请
    Semiconductor component with a MOS transistor 有权
    具有MOS晶体管的半导体元件

    公开(公告)号:US20060049436A1

    公开(公告)日:2006-03-09

    申请号:US11202634

    申请日:2005-08-12

    IPC分类号: H01L29/76

    摘要: The source area (3) is highly doped, like the channel area, for the same conductance type. The drain area (4) is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.

    摘要翻译: 对于相同的电导型,源极区域(3)像沟道区域一样被高度掺杂。 漏极区域(4)被掺杂用于相反的电导型。 这导致节省面积,因为源连接(S)可以同时用作阱连接或衬底连接。

    Semiconductor memory with vertical selection transistor
    25.
    发明授权
    Semiconductor memory with vertical selection transistor 失效
    具有垂直选择晶体管的半导体存储器

    公开(公告)号:US06770928B2

    公开(公告)日:2004-08-03

    申请号:US10375763

    申请日:2003-02-26

    IPC分类号: H01L27108

    摘要: A semiconductor memory having memory cells, each memory cell includes a selection transistor and a trench capacitor. The selection transistor is formed in the form of a vertical transistor. In such a case, two word lines are separated only by a connecting channel that enables an electrically conductive connection between a trench filling of the trench capacitor and a bit line.

    摘要翻译: 具有存储单元的半导体存储器,每个存储单元包括选择晶体管和沟槽电容器。 选择晶体管形成为垂直晶体管的形式。 在这种情况下,两条字线只能通过连接沟道分开,这样可以在沟槽电容器的沟槽填充和位线之间进行导电连接。

    Data retention monitor
    29.
    发明授权
    Data retention monitor 有权
    数据保留监视器

    公开(公告)号:US07864565B2

    公开(公告)日:2011-01-04

    申请号:US11831448

    申请日:2007-07-31

    IPC分类号: G11C11/00

    摘要: A data retention monitor for a memory cell including a voltage source and a voltage comparator. The voltage source is adapted to provide a selectable voltage to the memory cell. The selectable voltage includes a read voltage and a test voltage, with the test voltage being greater than the read voltage. The voltage comparator is adapted to compare a voltage of the memory cell with a reference voltage after the provision of the selectable voltage to the memory cell. The memory cell retains data when the memory cell voltage generated at least in part by the test voltage is substantially equal to the reference voltage.

    摘要翻译: 一种用于包括电压源和电压比较器的存储单元的数据保持监视器。 电压源适于向存储器单元提供可选择的电压。 可选择的电压包括读取电压和测试电压,测试电压大于读取电压。 电压比较器适于在将存储单元提供可选择的电压之后将存储单元的电压与参考电压进行比较。 当至少部分由测试电压产生的存储单元电压基本上等于参考电压时,存储单元保留数据。