公开(公告)号：US08361814B2

公开(公告)日：2013-01-29

申请号：US11350516

申请日：2006-02-09

Applicant: Dror Shemesh ,  Michal Eilon ,  Hen Doozli ,  Ekaterina Rechav ,  Eitan Binyamini

Inventor： Dror Shemesh ,  Michal Eilon ,  Hen Doozli ,  Ekaterina Rechav ,  Eitan Binyamini

IPC: G01R31/26 ,  H01L21/66 ,  B08B3/00 ,  B08B5/00

CPC classification number: H01L22/12

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract translation: 一种用于评估工具的清洁度的方法，所述方法包括：接收晶片; 清洁晶圆; 将晶片放置在工具中预定的时间段; 从工具移除晶片，执行接触角测量并确定晶片的清洁度。

公开(公告)号：US20090053395A1

公开(公告)日：2009-02-26

申请号：US12103458

申请日：2008-04-15

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: B05D5/12 ,  C23F1/00 ,  B05C11/00

CPC classification number: G01N1/32

Abstract: A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, whereas the cross section comprises at least one first portions made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are preformed while the specimen is placed in a vacuumed chamber.

Abstract translation: 一种用于获得样本横截面图像的方法和系统，所述方法包括：铣削样本以暴露样本的横截面，而横截面包括由第一材料制成的至少一个第一部分 和由第二材料制成的至少一个第二部分; 平滑横截面; 执行所述横截面的气体辅助蚀刻，以便在所述截面的所述至少一个第一部分和所述至少一个第二部分之间产生形貌差异; 用导电材料薄层涂覆横截面; 并获得横截面的图像; 其中在将样品放置在真空室中时进行研磨，平滑化，涂覆和获得。

公开(公告)号：US07473911B2

公开(公告)日：2009-01-06

申请号：US10695620

申请日：2003-10-27

Applicant: Alexander Kadyshevitch ,  Dror Shemesh ,  Yaniv Brami ,  Dmitry Shur

Inventor： Alexander Kadyshevitch ,  Dror Shemesh ,  Yaniv Brami ,  Dmitry Shur

IPC: H01J49/44

CPC classification number: H01L22/34 ,  H01J37/32935 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract translation: 一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。 带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口 的样品。 响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。 产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。

公开(公告)号：US20080234962A1

公开(公告)日：2008-09-25

申请号：US11877125

申请日：2007-10-23

Applicant: Dror Shemesh ,  Yuri Shirman

Inventor： Dror Shemesh ,  Yuri Shirman

IPC: G06F19/00

CPC classification number: G01N23/2276

Abstract: A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter; and an interface to a electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

Abstract translation: 一种用于提供经补偿的俄歇频谱的系统，所述系统包括：处理器，适于响应于未补偿的俄歇频谱并响应于电位相关参数产生经补偿的俄歇频谱; 以及与适于检测从第一区域发射的电子的电子检测器的接口，其中该接口连接到该处理器，并且其中该电位相关参数反映由该第一区域照射的该物体的第一区域的状态 在产生非补偿俄歇光谱期间的带电粒子束。

公开(公告)号：US20050012050A1

公开(公告)日：2005-01-20

申请号：US10492574

申请日：2002-10-04

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: H01J37/21 ,  A61N5/00 ,  G01N21/00 ,  G21G5/00 ,  H01J3/26 ,  H01J37/08 ,  H01J37/153 ,  H01J37/22 ,  H01J37/26

CPC classification number: H01J37/1471 ,  H01J37/153 ,  H01J37/22 ,  H01J37/263 ,  H01J37/265 ,  H01J37/304 ,  H01J2237/045 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/221

Abstract: The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.

Abstract translation: 本发明提供一种用于将带电粒子束自动对准孔的方法。 由此，光束被消除到光圈的两个边缘。 根据获得消光所需的信号，计算校正偏转场。 Furter提供了一种用于将带电粒子束自动对准光轴的方法。 从而引入散焦，并将基于引入的图像偏移计算的信号应用于偏转单元。 此外，提供了用于校正像散的方法。 因此，对于在将信号改变为瞄准器的同时测量的帧序列来评估锐度。

公开(公告)号：US08723144B2

公开(公告)日：2014-05-13

申请号：US11119230

申请日：2005-04-28

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: H01J37/08

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract translation: 公开了一种用于形成物体样品的装置，从物体中提取样品，并对该样品进行微量分析，包括真空室中的表面分析和电子透过度分析。 在一些实施例中，提供了用于对提取的样品的物体横截面进行成像的装置。 任选地，将样品迭代地稀释并在真空室内成像。 在一些实施例中，样品位于包括任选孔的样品支架上。 可选地，样品位于样品载体的表面上，使得物体横截面基本上平行于样品载体的表面。 一旦安装在样品支架上，样品就可以在真空室中进行微量分析，或者加载到装载站上。 在一些实施例中，用基本上正常地入射到物体横截面表面的电子束成像样品。

公开(公告)号：US07838830B2

公开(公告)日：2010-11-23

申请号：US11923407

申请日：2007-10-24

Applicant: Juergen Frosien ,  Helmut Banzhof ,  Jacob Levin ,  Dror Shemesh

Inventor： Juergen Frosien ,  Helmut Banzhof ,  Jacob Levin ,  Dror Shemesh

IPC: G01N23/00

CPC classification number: H01J37/1478 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1506 ,  H01J2237/2448 ,  H01J2237/26 ,  H01J2237/2806 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.

Abstract translation: 提供带电粒子束装置，其包括用于产生初级带电粒子束的带电粒子束柱; 聚焦组件，例如带电粒子透镜，例如静电透镜，用于将初级带电粒子束聚焦在样本上; 用于检测从样本出现的带电信号颗粒的检测器; 以及用于偏转初级带电粒子束的偏转器装置。 偏转器布置布置在聚焦组件的下游，并且适于允许带电信号颗粒通过其中。 检测器在由后聚焦偏转器布置限定的偏转方向上相对于光轴横向移位。

公开(公告)号：US07659506B2

公开(公告)日：2010-02-09

申请号：US11861206

申请日：2007-09-25

Applicant: Michal Avinun-Kalish ,  Jacob Levin ,  Dror Shemesh

Inventor： Michal Avinun-Kalish ,  Jacob Levin ,  Dror Shemesh

IPC: G01N23/22

CPC classification number: G01N23/2202 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/245 ,  H01J2237/2802 ,  H01J2237/2803 ,  H01J2237/31745

Abstract: A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.

Abstract translation: 一种用于产生薄样品的系统和方法，所述方法包括：铣削薄样品的中间部分，使得薄样品的上部相对于薄样品的下部倾斜; 其中下部连接到形成薄样品的晶片。 一种用于检查薄样品的系统和方法，所述方法包括：一种用于检查薄样品的方法，所述方法包括：通过带电粒子束照射经过研磨的中间体连接的薄样品的倾斜上部分 到薄样品的下部; 其中所述下部连接到形成所述薄样品的晶片; 并收集由照明产生的颗粒和光子。

公开(公告)号：US20090078867A1

公开(公告)日：2009-03-26

申请号：US11861206

申请日：2007-09-25

Applicant: Michal Avinun-Kalish ,  Jacob Levin ,  Dror Shemesh

Inventor： Michal Avinun-Kalish ,  Jacob Levin ,  Dror Shemesh

IPC: H01J37/26

CPC classification number: G01N23/2202 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/245 ,  H01J2237/2802 ,  H01J2237/2803 ,  H01J2237/31745

Abstract: A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.

Abstract translation: 一种用于产生薄样品的系统和方法，所述方法包括：铣削薄样品的中间部分，使得薄样品的上部相对于薄样品的下部倾斜; 其中下部连接到形成薄样品的晶片。 一种用于检查薄样品的系统和方法，所述方法包括：一种用于检查薄样品的方法，所述方法包括：通过带电粒子束照射通过研磨的中间体连接的薄样品的倾斜上部 到薄样品的下部; 其中所述下部连接到形成所述薄样品的晶片; 并收集由照明产生的颗粒和光子。

公开(公告)号：US07365320B2

公开(公告)日：2008-04-29

申请号：US10530178

申请日：2003-10-08

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: H01J37/153 ,  G01N23/00 ,  G21K7/00

CPC classification number: G01N23/2252

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.

Abstract translation: 基于由诸如电子或离子的带电粒子束引起的X射线发射的过程监测的系统和方法包括用于过程监测的系统和方法，其在填充之前分析空腔，然后分析来自腔的发射的X射线 空腔已经填充有导电材料。 还包括用于过程监测的系统和方法，其应用定量分析校正技术检测X射线发射。