公开(公告)号：US20160222511A1

公开(公告)日：2016-08-04

申请号：US14632768

申请日：2015-02-26

申请人： FLOSFIA INC.

发明人： Takahiro Sasaki ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： C23C16/455 ,  C23C16/448 ,  C23C16/458 ,  C23C16/44

CPC分类号： C23C16/45508 ,  B05B17/0615 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45502 ,  C23C16/45506 ,  C23C16/4586

摘要： Provided is a film forming apparatus which is excellent in the film formation rate and is useful for performing mist CVD. A film forming apparatus includes an atomization/droplet-formation unit for turning a raw-material solution into a mist or droplets a raw-material solution, a carrying unit for carrying the mist or droplets generated in the atomization/droplet-formation unit onto a base using a carrier gas, and a film forming unit for treating the mist or droplets with heat to form a film on the base. The film forming unit is cylindrical or almost cylindrical and has an inlet for introducing the mist or droplets in a side surface thereof so that the mist or droplets is swirled to generate a swirling flow. And the film forming unit has an exhaust outlet in a top surface thereof.

摘要翻译： 本发明提供一种成膜速度优异且可用于雾化CVD的成膜装置。 成膜装置包括用于将原料溶液转化为雾或液滴原料溶液的雾化/液滴形成单元，用于将在雾化/液滴形成单元中产生的雾或液滴携带在载体单元上的载体单元 使用载气的基底，以及用于通过热处理雾或液滴以在基底上形成膜的成膜单元。 成膜单元是圆柱形或几乎圆柱形的，并且具有用于在其侧表面中引入雾或液滴的入口，使得雾或液滴旋转以产生旋流。 并且成膜单元在其顶表面中具有排气口。

公开(公告)号：US20160060788A1

公开(公告)日：2016-03-03

申请号：US14838126

申请日：2015-08-27

申请人： FLOSFIA INC.

发明人： Masaya Oda ,  Toshimi Hitora

IPC分类号： C30B19/00 ,  H01L21/288 ,  H01L29/45 ,  C03C17/10 ,  C30B29/02

CPC分类号： C30B19/00 ,  C03C17/10 ,  C03C2217/253 ,  C03C2218/112 ,  C23C16/18 ,  C23C16/4486 ,  C30B29/02 ,  H01L21/288 ,  H01L29/45

摘要： Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

摘要翻译： 提供一种能够在工业上有利地形成具有优异的粘附性的金属膜和通过使用该方法形成的金属膜的金属膜形成方法。 在基材上形成金属膜的方法包括将原料溶液雾化成雾的雾化步骤，其中原料通过将金属溶解或分散在含有氧化剂的有机溶剂中制备，螯合剂 ，或质子酸; 将载气供给到所述雾中的载气供给工序; 使用所述载气将所述雾供给到所述基底上的雾供给工序; 以及金属膜形成步骤，在基底的一部分或全部表面上形成金属膜，使雾发生反应。

公开(公告)号：US20150279944A1

公开(公告)日：2015-10-01

申请号：US14578017

申请日：2014-12-19

申请人： FLOSFIA INC.

发明人： Toshimi Hitora ,  Masaya Oda

IPC分类号： H01L29/24 ,  H01L21/02

CPC分类号： H01L29/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

摘要翻译： 提供了具有良好半导体特性的结晶多层结构。 结晶多层结构包括直接设置在基底基板上的基底基板和刚玉结构的结晶氧化物半导体薄膜，或者其间具有另一层。 结晶氧化物半导体薄膜的表面粗糙度（Ra）为0.1μm以下。

公开(公告)号：US11967618B2

公开(公告)日：2024-04-23

申请号：US17832984

申请日：2022-06-06

申请人： FLOSFIA INC.

发明人： Isao Takahashi ,  Takashi Shinohe ,  Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/12 ,  H01L29/227 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L29/227 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02433 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

摘要： A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US11682702B2

公开(公告)日：2023-06-20

申请号：US17114194

申请日：2020-12-07

申请人： FLOSFIA INC.

发明人： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC分类号： H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

CPC分类号： H01L29/24 ,  H01L21/0242 ,  H01L21/0262 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/778 ,  H01L29/7722 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/005 ,  H01L33/26 ,  H01L33/44

摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10989609B2

公开(公告)日：2021-04-27

申请号：US16611291

申请日：2018-04-27

申请人： FLOSFIA INC.

发明人： Shingo Yagyu ,  Takahiro Sasaki ,  Toshimi Hitora

IPC分类号： G01K7/22 ,  H01C7/04 ,  H01C17/18

摘要： Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 μm or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 μm or less, a thickness in the range of less than ±50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 μm or less, and has a film surface roughness (Ra) of 0.1 μm or less.

公开(公告)号：US10804362B2

公开(公告)日：2020-10-13

申请号：US15689547

申请日：2017-08-29

申请人： FLOSFIA INC.

发明人： Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L29/24 ,  H01L21/02 ,  H01L29/808 ,  H01L33/42 ,  H01L29/66 ,  H01L29/778 ,  H01L29/739 ,  H01L29/78 ,  H01L29/04 ,  H01L29/872 ,  H01L33/32

摘要： In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm2/Vs or more.

公开(公告)号：US20190013384A1

公开(公告)日：2019-01-10

申请号：US16118402

申请日：2018-08-30

申请人： FLOSFIA INC.

发明人： Toshimi Hitora ,  Masaya Oda

IPC分类号： H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

摘要： Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

公开(公告)号：US20180308924A1

公开(公告)日：2018-10-25

申请号：US16014633

申请日：2018-06-21

申请人： FLOSFIA INC.

发明人： Toshimi Hitora ,  Masaya Oda

IPC分类号： H01L29/04 ,  H01L29/26 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L21/477 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L29/04 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/477 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/8611 ,  H01L29/872

摘要： Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩ cm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US10106633B2

公开(公告)日：2018-10-23

申请号：US14975210

申请日：2015-12-18

申请人： FLOSFIA INC.

发明人： Takahiro Sasaki ,  Masaya Oda ,  Toshimi Hitora ,  Toyosuke Ibi

IPC分类号： C08F112/08 ,  C08F2/01 ,  C08F2/20 ,  B05D1/00 ,  B05B17/06

摘要： Provided is a method and an apparatus for producing a novel polymer that is easy and convenient to control the reactivity and excellent in film thickness control and a method and an apparatus for producing an organic film. A production apparatus includes: a first means for turning a raw-material solution containing an organic compound into a mist or droplets by an atomization or a droplet-formation; a second means for carrying the mist or droplets onto a substrate using a carrier gas; and a third means for subjecting the mist or droplets to a thermal reaction by heating on the substrate. Using the production apparatus, an organic film, such as a polymer film, is formed by atomizing or forming droplets from, for example, a raw-material solution containing the organic compound, such as a monomer, delivering a mist or droplets generated by the atomization or the droplet-formation to a substrate with a carrier gas, and, after the delivery, subjecting the mist or the droplets to a thermal reaction by heating on the substrate.