OVERLAY CIRCUIT STRUCTURE FOR INTERCONNECTING LIGHT EMITTING SEMICONDUCTORS
    24.
    发明申请
    OVERLAY CIRCUIT STRUCTURE FOR INTERCONNECTING LIGHT EMITTING SEMICONDUCTORS 审中-公开
    用于互连发光二极管的叠加电路结构

    公开(公告)号:US20150108513A1

    公开(公告)日:2015-04-23

    申请号:US14579569

    申请日:2014-12-22

    Abstract: A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit light therefrom responsive to a received electrical power. The LES device also includes a flexible interconnect structure positioned on and electrically connected to each LES chip to provide for controlLES operation of the array of LES chips, with the flexible interconnect structure further including a flexible dielectric film configured to conform to a shape of the heatsink and a metal interconnect structure formed on the flexible dielectric film and that extends through vias formed in the flexible dielectric film so as to be electrically connected to the connection pads of the LES chips.

    Abstract translation: 公开了一种用于封装发光半导体(LES)的系统和方法。 提供了一种LES装置,其包括散热器和安装在散热器上并电连接到其上的LES芯片阵列,每个LES芯片包括连接焊盘和配置为响应于接收的电力从其发射光的发光区域。 LES装置还包括位于每个LES芯片上并电连接到每个LES芯片以提供LES芯片阵列的控制操作的柔性互连结构,其中柔性互连结构还包括被配置为符合散热器形状的柔性介电膜 以及金属互连结构,其形成在柔性电介质膜上并且延伸穿过形成在柔性电介质膜中的通孔,以便电连接到LES芯片的连接焊盘。

    Power overlay structure and method of making same

    公开(公告)号:US10269688B2

    公开(公告)日:2019-04-23

    申请号:US13897685

    申请日:2013-05-20

    Abstract: A semiconductor device module includes a dielectric layer, a semiconductor device having a first surface coupled to the dielectric layer, and a conducting shim having a first surface coupled to the dielectric layer. The semiconductor device also includes an electrically conductive heatspreader having a first surface coupled to a second surface of the semiconductor device and a second surface of the conducting shim. A metallization layer is coupled to the first surface of the semiconductor device and the first surface of the conducting shim. The metallization layer extends through the dielectric layer and is electrically connected to the second surface of the semiconductor device by way of the conducting shim and the heatspreader.

    Power overlay structure and method of making same

    公开(公告)号:US10186477B2

    公开(公告)日:2019-01-22

    申请号:US15363237

    申请日:2016-11-29

    Abstract: A semiconductor device module includes a dielectric layer, a semiconductor device having a first surface coupled to the dielectric layer, and a conducting shim having a first surface coupled to the dielectric layer. The semiconductor device also includes an electrically conductive heatspreader having a first surface coupled to a second surface of the semiconductor device and a second surface of the conducting shim. A metallization layer is coupled to the first surface of the semiconductor device and the first surface of the conducting shim. The metallization layer extends through the dielectric layer and is electrically connected to the second surface of the semiconductor device by way of the conducting shim and the heatspreader.

    Overlay circuit structure for interconnecting light emitting semiconductors

    公开(公告)号:US10070531B2

    公开(公告)日:2018-09-04

    申请号:US14579569

    申请日:2014-12-22

    Abstract: A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit light therefrom responsive to a received electrical power. The LES device also includes a flexible interconnect structure positioned on and electrically connected to each LES chip to provide for control LES operation of the array of LES chips, with the flexible interconnect structure further including a flexible dielectric film configured to conform to a shape of the heatsink and a metal interconnect structure formed on the flexible dielectric film and that extends through vias formed in the flexible dielectric film so as to be electrically connected to the connection pads of the LES chips.

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