公开(公告)号：US20140187041A1

公开(公告)日：2014-07-03

申请号：US13728079

申请日：2012-12-27

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Olov Karlsson ,  Sven Metzger

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517

Abstract: Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact.

Abstract translation: 提供了用于处理半导体衬底以去除高剂量离子注入（HDI）光致抗蚀剂结构而不损坏由氮化钛，氮化钽，氧化铪和/或氧化铪形成的其它结构的半导体衬底的方法。 使用有机溶剂，氧化剂，金属类催化剂和碱或酸之一的混合物进行除去。 合适的有机溶剂的一些实例包括二甲基亚砜，正乙基吡咯烷酮，单甲基醚和乳酸乙酯。 过渡金属的零氧化态，如金属铁或金属铬，可用作该混合物中的催化剂。 在一些实施方案中，混合物包括四甲基氢氧化铵的乳酸乙酯和小于1重量％的金属基催化剂。 HDI光致抗蚀剂的蚀刻速率可以为每分钟至少约100埃，而其它结构可保持基本完整。

公开(公告)号：US20130244186A1

公开(公告)日：2013-09-19

申请号：US13891412

申请日：2013-05-10

Applicant: Intermolecular Inc.

Inventor： Indranil De ,  Anh Duong

IPC: G03F7/32

CPC classification number: G03F7/327 ,  C11D7/3209 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02052

Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

Abstract translation: 公开了一种用于从半导体衬底去除光致抗蚀剂和底部抗反射涂层的组合物。 组合物可以包含无毒溶剂，无毒溶剂具有高于80摄氏度的闪点，并且能够溶解丙烯酸聚合物和酚醛聚合物。 组合物还可以包含与无毒溶剂混合的四甲基氢氧化铵（TMAH）。

公开(公告)号：US08926758B2

公开(公告)日：2015-01-06

申请号：US13779277

申请日：2013-02-27

Applicant: Intermolecular Inc.

Inventor： Indranil De ,  Anh Duong

IPC: C11D7/50 ,  G03F7/32 ,  C11D7/32 ,  G03F7/42 ,  C11D11/00 ,  H01L21/02

CPC classification number: G03F7/327 ,  C11D7/3209 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02052

Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

Abstract translation: 公开了一种用于从半导体衬底去除光致抗蚀剂和底部抗反射涂层的组合物。 组合物可以包含无毒溶剂，无毒溶剂具有高于80摄氏度的闪点，并且能够溶解丙烯酸聚合物和酚醛聚合物。 组合物还可以包含与无毒溶剂混合的四甲基氢氧化铵（TMAH）。

公开(公告)号：US20150001555A1

公开(公告)日：2015-01-01

申请号：US14488712

申请日：2014-09-17

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L23/532

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract translation: 提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中，导电区域被水溶液选择性地增强。 在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

公开(公告)号：US08575021B2

公开(公告)日：2013-11-05

申请号：US13829290

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Thomas R. Boussie ,  Tony P. Chiang ,  Anh Duong ,  Zachary Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Sandra G. Malhotra ,  Jinhong Tong

IPC: H01L21/31 ,  H01L21/312 ,  H01L21/32

CPC classification number: H01L21/02112 ,  H01L21/02123 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/7685

Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US20150279670A1

公开(公告)日：2015-10-01

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US09012322B2

公开(公告)日：2015-04-21

申请号：US13857696

申请日：2013-04-05

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3213 ,  C23F1/34

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。

公开(公告)号：US20150017456A1

公开(公告)日：2015-01-15

申请号：US13941841

申请日：2013-07-15

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz

IPC: H01L21/3105 ,  H01L21/66

CPC classification number: H01L21/3105 ,  H01L21/02071 ,  H01L21/32134 ,  H01L22/12 ,  H01L22/26

Abstract: When an etchant for metal (e.g., HF) reaches an underlying silicon oxide layer, it may form silanol bonds or other hydrogen bonds that resist rinsing, so that some etchant remains to be trapped under the next deposited layer. Trapped etchant can create voids that eventually degrade the performance of the oxide layer. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. The silane reacts at sites with silanol (or other hydrogen) bonds, breaking the bonds and replacing the hydrogen with silicon, but does not react in the absence of a hydrogen bond.

Abstract translation: 当金属（例如HF）的蚀刻剂到达下面的氧化硅层时，它可以形成硅烷醇键或其它阻止冲洗的氢键，使得一些蚀刻剂仍然被捕获在下一沉积层下面。 捕获的蚀刻剂可能产生最终降低氧化物层性能的空隙。 将表面暴露于含有硅烷的液体溶液或气体前体将缺陷密封，而不会导致总的厚度变化。 硅烷在硅烷醇（或其他氢）键的位置处反应，破坏键并用硅代替氢，但在不存在氢键的情况下不反应。

公开(公告)号：US08859431B2

公开(公告)日：2014-10-14

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/324 ,  H01L21/285 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20140302671A1

公开(公告)日：2014-10-09

申请号：US13857696

申请日：2013-04-05

Applicant: INTERMOLECULAR INC.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L21/306

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。