公开(公告)号：US06743737B2

公开(公告)日：2004-06-01

申请号：US10226717

申请日：2002-08-22

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06706138B2

公开(公告)日：2004-03-16

申请号：US09931324

申请日：2001-08-16

申请人： Michael S. Barnes ,  John Holland ,  Alexander Paterson ,  Valentin Todorov ,  Farhad Moghadam

发明人： Michael S. Barnes ,  John Holland ,  Alexander Paterson ,  Valentin Todorov ,  Farhad Moghadam

IPC分类号： H01L21306

CPC分类号： H01J37/3244 ,  H01J37/32082

摘要： Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

摘要翻译： 提供了用于处理基板的设备和方法。 用于处理衬底的设备包括：具有第一电极的腔室; 设置在所述室中并提供第二电极的衬底支撑件; 电连接到第一或第二电极的高频电源; 电连接到第一或第二电极的低频电源; 和连接到一个或多个电极的可变阻抗元件。 可调谐可变阻抗元件以控制第一电极和第二电极之间的自偏压分压。 本发明的实施例大大减少电极的侵蚀，保持工艺均匀性，提高用于形成高纵横比亚微米互连特征的蚀刻工艺的精度，并提供增加的蚀刻速率，从而减少集成电路的生产时间和成本 。

公开(公告)号：US06596655B1

公开(公告)日：2003-07-22

申请号：US09957681

申请日：2001-09-19

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2131

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

公开(公告)号：US06245690B1

公开(公告)日：2001-06-12

申请号：US09187460

申请日：1998-11-04

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： C23C1640

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06170428B2

公开(公告)日：2001-01-09

申请号：US08679927

申请日：1996-07-15

申请人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

发明人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

IPC分类号： C23C1600

CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.

摘要翻译： 本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。 本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

公开(公告)号：US07431585B2

公开(公告)日：2008-10-07

申请号：US10278615

申请日：2002-10-22

申请人： Jun Zhao ,  David Quach ,  Timothy Weidman ,  Rick J. Roberts ,  Farhad Moghadam ,  Dan Maydan

发明人： Jun Zhao ,  David Quach ,  Timothy Weidman ,  Rick J. Roberts ,  Farhad Moghadam ,  Dan Maydan

IPC分类号： F27D3/00

CPC分类号： H01L21/67109 ,  Y10S414/139

摘要： An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

公开(公告)号：US20050233576A1

公开(公告)日：2005-10-20

申请号：US11118678

申请日：2005-04-28

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

IPC分类号： C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/314

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

公开(公告)号：US20050191846A1

公开(公告)日：2005-09-01

申请号：US11087393

申请日：2005-03-22

申请人： David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US06632735B2

公开(公告)日：2003-10-14

申请号：US09924240

申请日：2001-08-07

申请人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

发明人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31633

摘要： A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

摘要翻译： 公开了形成碳掺杂氧化硅层的方法。 碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。 碳掺杂氧化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。 在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中

公开(公告)号：US06583071B1

公开(公告)日：2003-06-24

申请号：US09692660

申请日：2000-10-18

申请人： Timothy Weidman ,  Yunfeng Lu ,  Michael P Nault ,  Michael Barnes ,  Farhad Moghadam

发明人： Timothy Weidman ,  Yunfeng Lu ,  Michael P Nault ,  Michael Barnes ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/3122 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/4486 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76834

摘要： A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.

摘要翻译： 一种在衬底上形成极低介电常数膜的方法。 该方法包括使用超声波喷嘴将包含可溶性氧化硅源，水，溶剂，表面活性剂和催化剂的溶液涂覆在基材上。 然后将涂覆的基底随后处理以将溶液硬化成极低介电常数的膜。