公开(公告)号：USD667790S1

公开(公告)日：2012-09-25

申请号：US29407442

申请日：2011-11-29

申请人： Shin Osaki ,  Eiji Hojo ,  Yasuhide Nakayama ,  Hiroshi Haruyama ,  Aya Sawa ,  Hiroshi Okumura

设计人： Shin Osaki ,  Eiji Hojo ,  Yasuhide Nakayama ,  Hiroshi Haruyama ,  Aya Sawa ,  Hiroshi Okumura

公开(公告)号：US07928583B2

公开(公告)日：2011-04-19

申请号：US12339218

申请日：2008-12-19

申请人： Hiroshi Okumura ,  Shingo Higuchi

发明人： Hiroshi Okumura ,  Shingo Higuchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05568 ,  H01L2224/05599 ,  H01L2224/10126 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor device includes a semiconductor substrate; a sealing resin layer formed on a top face of the semiconductor substrate; a metal post formed on the top face of the semiconductor substrate such that a top face of the metal post is exposed through the sealing resin layer; a projecting electrode formed on the top face of the metal post; and a low-elasticity resin layer made of a resin material with an elasticity modulus lower than that of the sealing resin layer and formed on the top face of the sealing resin layer such that part of the low-elasticity resin layer lies between the projecting electrode and the sealing resin layer.

摘要翻译： 半导体器件包括半导体衬底; 密封树脂层，形成在所述半导体衬底的顶面上; 形成在所述半导体基板的上表面上的金属柱，使得所述金属柱的顶面通过所述密封树脂层露出; 形成在金属柱的顶面上的突出电极; 以及弹性模量低于密封树脂层的树脂材料制成的低弹性树脂层，并且形成在密封树脂层的顶面上，使得低弹性树脂层的一部分位于突出电极 和密封树脂层。

公开(公告)号：US07745822B2

公开(公告)日：2010-06-29

申请号：US10558073

申请日：2004-03-15

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： H01L29/04

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1251 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the small heat capacity part is used at least as a channel part. The polycrystalline Si film is formed of a crystal grain film through laser annealing of an energy density with which the small heat capacity part melts completely but the large heat capacity part does not melt completely. Since the channel part is formed of large crystal grains grown from the boundaries between the small heat capacity part and the large heat capacity parts, it is possible to realize performances such as a low threshold voltage value, high carrier mobility and a low leak current by using a typical laser annealing device.

摘要翻译： 能够容易地实现低阈值电压值，高载流子迁移率和低泄漏电流等性能的TFT等。 TFT由具有小热容部分和大热容部分的多晶Si膜组成，并且小热容部分至少用作通道部分。 多晶硅膜通过激光退火由能量密度形成，其中小热量部分完全熔化，但是大的热容部分不会完全熔化。 由于通道部分由从小热容部分和大热容部分之间的边界生长的大晶粒形成，所以可以通过以下方式实现低阈值电压值，高载流子迁移率和低泄漏电流等性能 使用典型的激光退火装置。

公开(公告)号：US20090194320A1

公开(公告)日：2009-08-06

申请号：US11920399

申请日：2006-05-10

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： H05K1/02 ,  B32B27/02 ,  B32B15/02

CPC分类号： B32B27/04 ,  B32B17/04 ,  C08G59/226 ,  C08G59/38 ,  C08J5/24 ,  C08J2363/00 ,  C08L63/00 ,  H01L33/60 ,  H05K1/0274 ,  H05K1/0373 ,  H05K2201/0209 ,  H05K2201/10106 ,  H05K2201/2054 ,  Y10T428/294 ,  Y10T428/2956

摘要： [Problems] White laminates for print wire boards heretofore have problems of discoloring of thermosetting resin portion and reduction of reflectance. In LEDs of type using UV emitting device have not been appropriate in mounting recent high luminous intensity LED, a requirement for substrates which are not discolored towards UV and heat is becoming strong, since substrates on which the LED chip is mounted are deteriorated and discolored by UV. Further, in mounting chip LED, accuracy of board thickness is also required in order to avoid liquid leakage during sealing process of the chip LED.[Means for Solving the Problems] White prepreg according to the present invention is characterized in that it comprises a dried product of a resin composition (E) impregnated on a sheet glass fiber substrate; said composition (E) containing, as essential ingredients, an epoxy resin (A) comprising a cycloaliphatic epoxy resin (A1), a glycidyl (meth)acrylate polymer (B), a white pigment (C), and a curative (D). Besides, a white laminate of this invention is characterized in that it comprises a product obtainable by pressure molding under heating of one sheet or plural sheets of a white prepreg as above.

摘要翻译： [问题]印刷线路板的白色层压板迄今为止具有热固性树脂部分变色和反射率降低的问题。 在使用UV发射装置的LED类型中，在安装最近的高发光强度LED方面并不合适，因此对于UV和热不变色的基板的要求变得越来越强，因为其上安装了LED芯片的基板被劣化并变色 紫外线。 此外，在安装芯片LED时，为了避免芯片LED的密封过程中的液体泄漏，也需要板厚精度。 解决问题的方法本发明的白色预浸料的特征在于，其包含浸渍在玻璃纤维基材上的树脂组合物（E）的干燥物; 所述组合物（E）含有环脂族环氧树脂（A1），（甲基）丙烯酸缩水甘油酯聚合物（B），白色颜料（C）和固化剂（D））的环氧树脂（A）作为必要成分， 。 此外，本发明的白色层压体的特征在于，其包含通过加热一个或多个如上所述的白色预浸料坯的加压成型而得到的产品。

公开(公告)号：US20080150134A1

公开(公告)日：2008-06-26

申请号：US12003424

申请日：2007-12-26

申请人： Hiroyuki Shinkai ,  Hiroshi Okumura

发明人： Hiroyuki Shinkai ,  Hiroshi Okumura

IPC分类号： H01L23/488

CPC分类号： H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device of the present invention includes a semiconductor chip; an internal pad for electrical connection formed on a surface of the semiconductor chip; a stress relaxation layer formed on the semiconductor chip and having an opening for exposing the internal pad; an under-bump layer formed so as to cover a face exposed in the opening on the internal pad, an inner face of the opening and a circumference of the opening on the stress relaxation layer; a solder terminal for electrical connection with outside formed on the under-bump layer; and a protective layer formed on the stress relaxation layer, encompassing a periphery of the under-bump layer and covering a side face of the under-bump layer.

摘要翻译： 本发明的半导体器件包括半导体芯片; 用于电连接的内部焊盘，形成在所述半导体芯片的表面上; 形成在所述半导体芯片上并且具有用于使所述内部焊盘露出的开口的应力松弛层; 形成为覆盖露出在内部焊盘上的开口中的面的凹凸下层，开口的内表面和应力松弛层上的开口的周边; 用于与凹凸层上形成的外部电连接的焊接端子; 以及形成在所述应力松弛层上的保护层，包围所述凸点下层的周边并覆盖所述凸点下层的侧面。

公开(公告)号：US06924856B2

公开(公告)日：2005-08-02

申请号：US10172261

申请日：2002-06-14

申请人： Hiroshi Okumura ,  Masayoshi Suzuki

发明人： Hiroshi Okumura ,  Masayoshi Suzuki

IPC分类号： G02B5/02 ,  G02B1/04 ,  G02B3/00 ,  G02B5/20 ,  G02B5/30 ,  G02F1/1334 ,  G02F1/1335 ,  G02F1/13363 ,  G02F1/139 ,  G02F1/1343

CPC分类号： G02F1/1393 ,  G02F1/133526 ,  G02F2001/133638

摘要： A LCD device is provided. On the input side, the collimated-light generator generates collimated light from incident light and then, the first polarizer plate of the first polarized-light controller generates first polarized light from the collimated light. The first quarter wavelength plate of the first polarized-light controller generates second polarized light from the first polarized light. The second polarized light thus generated passes through the liquid crystal layer to reach the output side. On the output side, the second polarized light passes through the second quarter wavelength plate of the second polarized-light controller and the second quarter wavelength plate thereof. Thus, the polarization state of the second polarized light is returned to its original one.

公开(公告)号：US06921685B2

公开(公告)日：2005-07-26

申请号：US10119164

申请日：2002-04-09

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： G02F1/1368 ,  G02F1/136 ,  H01L21/20 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66765

摘要： A method of fabricating a thin film transistor includes the steps of (a) forming an amorphous silicon film containing hydrogen therein, on a substrate composed of resin, and (b) irradiating laser beams to the amorphous silicon film at an intensity equal to or smaller than a threshold intensity at which the amorphous silicon film is crystallized. For instance, the step (a) includes the steps of forming the amorphous silicon film on the resin substrate by sputtering, and doping hydrogen ions into the amorphous silicon film.

摘要翻译： 一种制造薄膜晶体管的方法包括以下步骤：（a）在由树脂构成的基板上形成含有氢的非晶硅膜，（b）以等于或等于等于或等于3的强度向非晶硅膜照射激光束 比非晶硅膜结晶的阈值强度高。 例如，步骤（a）包括通过溅射在树脂基板上形成非晶硅膜，并将氢离子掺入到非晶硅膜中的步骤。

公开(公告)号：US06894747B2

公开(公告)日：2005-05-17

申请号：US10227952

申请日：2002-08-27

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： G02B5/02 ,  B23K26/00 ,  B23K26/38 ,  B23K101/38 ,  G02B5/08 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362

CPC分类号： G02F1/133553 ,  G02F1/136227 ,  Y10S438/94

摘要： A flat organic insulating layer is formed on a substrate provided with thin film transistors by coating and baking. Next, a pulse-shaped laser beam is irradiated on the organic insulating layer and a contact hole and an undulation are formed in and on the organic insulating layer by ablation. The undulation is formed in such a way as to have four or more height levels.

摘要翻译： 通过涂布和烘烤在具有薄膜晶体管的基板上形成平坦的有机绝缘层。 接下来，在有机绝缘层上照射脉冲状的激光束，通过烧蚀在有机绝缘层上及其上形成接触孔和起伏。 起伏形成为具有四个或更多个高度水平的方式。

公开(公告)号：US06734460B2

公开(公告)日：2004-05-11

申请号：US10114093

申请日：2002-04-02

申请人： Hiroshi Okumura ,  Osamu Sukegawa

发明人： Hiroshi Okumura ,  Osamu Sukegawa

IPC分类号： H01L2904

CPC分类号： H01L29/66083 ,  G02F1/1365 ,  H01L29/861

摘要： An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. As an alternative, the polysilicon thin film diode may be comprised of two lateral diodes electrically connected in parallel to each other and arranged in opposite directions.

公开(公告)号：US06261705B1

公开(公告)日：2001-07-17

申请号：US09089518

申请日：1998-06-03

申请人： Akio Tanikawa ,  Hiroshi Okumura

发明人： Akio Tanikawa ,  Hiroshi Okumura

IPC分类号： B32B1500

CPC分类号： H01L29/78696 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28035 ,  H01L29/4925 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T428/12674

摘要： To provide a poly-Si film which has excellence in its characteristics themselves concerning transistor characteristics, such as the diffusion and precipitation of dopant, the interface and surface state or the carrier mobility, and excellence in controllability of those characteristics as well, a poly-Si film grown on an amorphous layer (12) comprises; a base layer (131) interfacing with the amorphous layer (12) and having a preferred orientation rate comparatively high; a low-energy layer (133) grown at an upper side of the base layer (131) and having a preferred orientation rate which varies little and is lower than the preferred orientation rate of the base layer (131); and a surface layer (135) grown at the upper side of the low-energy layer (133) and having a preferred orientation rate which becomes higher towards a surface of the poly-Si film.

摘要翻译： 为了提供其特性本身具有优异的多晶硅膜，例如掺杂剂的扩散和沉淀，界面和表面状态或载流子迁移率以及这些特性的可控性优异的晶体管特性， 在非晶层（12）上生长的Si膜包括： 与所述非晶层（12）接合且具有较高定向速率的基层（131）; 在基底层（131）的上侧生长的低能层（133），其优选取向速度变化很小，低于基底层（131）的优选取向速度; 以及在所述低能层（133）的上侧生长并且具有朝向所述多晶硅膜的表面变得更高的优选取向速率的表面层（135）。