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    SPIN ON GLASS (SOG) ETCH IMPROVEMENT METHOD
    23.
    发明申请
    SPIN ON GLASS (SOG) ETCH IMPROVEMENT METHOD 有权
    旋转玻璃（SOG）蚀刻改进方法

    公开(公告)号：US20080280447A1

    公开(公告)日：2008-11-13

    申请号：US11746217

    申请日：2007-05-09

    申请人： Yong Seok Choi ,  Jeannette Michelle Jacques

    发明人： Yong Seok Choi ,  Jeannette Michelle Jacques

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/76808

    摘要： A system and method of preventing pattern lifting during a trench etch/clean process is disclosed. A first layer comprising a first dip is formed over a first via pattern. A trench resist layer is formed. The trench resist layer is patterned with a trench reticle to produce a second via pattern in the trench resist layer over the first via pattern. A photo resist over the first via pattern is opened during a trench processing. Thus, an additional pattern added on a trench pattern reticle is used to open, i.e., remove resist over, a huge via feature area causing under layer dip.

    摘要翻译： 公开了一种在沟槽蚀刻/清洁过程中防止图案提升的系统和方法。 在第一通孔图案上形成包括第一浸渍的第一层。 形成沟槽抗蚀剂层。 用沟槽掩模版图案化沟槽抗蚀剂层，以在第一通孔图案上的沟槽抗蚀剂层中产生第二通孔图案。 在沟槽处理期间打开第一通孔图案上的光刻胶。 因此，使用添加在沟槽图案掩模版上的附加图案来打开，即，去除导致下层浸渍的巨大通孔特征区域的抗蚀剂。

    Remote control apparatus
    24.
    发明授权
    Remote control apparatus 有权
    遥控器

    公开(公告)号：US09209785B2

    公开(公告)日：2015-12-08

    申请号：US13407999

    申请日：2012-02-29

    申请人： Yong Seok Choi

    发明人： Yong Seok Choi

    IPC分类号： G05B11/01 ,  H03J1/00 ,  H01H9/02

    CPC分类号： H03J1/0025 ,  H01H2009/0257

    摘要： A remote control apparatus which includes a first operation unit including a first key part having a plurality of keys operable when the remote control is in a first mode, a first control unit to generate a key signal corresponding to a key input through the first key part and a first transmission unit to transmit the key signal to the image apparatus, and a second operation unit including a second key part provided on a surface of the remote control apparatus, the second key part is different from the first key part and has a plurality of keys to be manipulated when the remote control is in a second mode, a second control unit to generate a key signal corresponding to a key input through the second key part, and a second transmission unit to transmit the key signal to the image apparatus.

    摘要翻译： 一种遥控装置，包括：第一操作单元，包括具有当遥控器处于第一模式时可操作的多个键的第一键部;第一控制单元，用于产生与通过第一键部分输入的键相对应的键信号; 以及第一传送单元，用于将键信号发送到图像设备;以及第二操作单元，包括设置在遥控设备的表面上的第二键部分，第二键部分与第一键部分不同，并具有多个 遥控器处于第二模式时要操作的键;第二控制单元，用于产生与通过第二键部分输入的键相对应的键信号;以及第二传送单元，用于将键信号发送到图像设备。

    Defocus determination method using sub-resolution feature (SRF) printing
    28.
    发明授权
    Defocus determination method using sub-resolution feature (SRF) printing 有权
    散焦确定方法使用分辨率特征（SRF）打印

    公开(公告)号：US07840932B2

    公开(公告)日：2010-11-23

    申请号：US11746970

    申请日：2007-05-10

    申请人： Yong Seok Choi

    发明人： Yong Seok Choi

    IPC分类号： G06F17/50

    CPC分类号： G03B27/42 ,  G03F7/70641

    摘要： The present application is directed to apparatus and methods for determining a magnitude of defocus and a direction of defocus for a photolithography process. A sub-resolution feature on a reticle which is not printed on a wafer at the best focus offset, but is formed on a wafer at some defocus during the photolithography process is analyzed to determine the magnitude and direction of defocus. The magnitude and direction of defocus are used to adjust the photolithography process to an optimal focus based on the determined magnitude of defocus and the determined direction of defocus.

    摘要翻译： 本申请涉及用于确定用于光刻工艺的散焦大小和散焦方向的装置和方法。 分析光掩膜上的亚分辨率特征，其不以最佳聚焦偏移印刷在晶片上，而是在光刻工艺期间在一些散焦处形成在晶片上，以确定散焦的大小和方向。 散焦的大小和方向用于基于确定的散焦的大小和确定的散焦方向将光刻处理调整到最佳焦点。

    Piercing device of hydroforming mold
    29.
    发明授权
    Piercing device of hydroforming mold 有权

    公开(公告)号：US07552609B2

    公开(公告)日：2009-06-30

    申请号：US12006369

    申请日：2008-01-02

    申请人： Yong Seok Choi

    发明人： Yong Seok Choi

    IPC分类号： B21D53/88 ,  B21D26/02

    CPC分类号： B21D26/035 ,  B21D28/24 ,  B21D28/34 ,  Y10T29/49805 ,  Y10T83/0591

    摘要： Disclosed is a piercing device of a hydroforming mold with a lower steel having a cavity therein, which can make the replacement of the pierce punch easier. The piercing device comprises: a pierce punch, the front edge portion of which is inserted into the cavity, for punching a hole through a molding material; a pierce cylinder for providing hydraulic pressure; a rod connected to the pierce cylinder, which is to be operated by the hydraulic pressure; and a pierce block connecting the rod and the pierce punch, wherein the length between the front edge portion of the rod and the pierce punch is greater than the length of the pierce punch.

    TRI-LAYER PLASMA ETCH RESIST REWORK
    30.
    发明申请
    TRI-LAYER PLASMA ETCH RESIST REWORK 有权
    三层等离子体蚀刻反应

    公开(公告)号：US20090050604A1

    公开(公告)日：2009-02-26

    申请号：US11843361

    申请日：2007-08-22

    申请人： Jeannette Michelle Jacques ,  Yong Seok Choi

    发明人： Jeannette Michelle Jacques ,  Yong Seok Choi

    IPC分类号： G03F1/00

    CPC分类号： H01L21/31144 ,  H01L21/02079 ,  H01L21/0271

    摘要： Exemplary embodiments provide a tri-layer resist (TLR) stack used in a photolithographic process, and methods for resist reworking by a single plasma etch process. The single plasma etch process can be used to remove one or more portions/layers of the TLR stack that needs to be reworked in a single process. The removed portions/layers can then be re-formed and resulting in a reworked TLR stack for subsequent photo-resist (PR) processing. The disclosed plasma-etch resist rework method can be a fast, simple, and cost effective process used in either single or dual damascene tri-layer patterning processes for the fabrication of, for example, sub 45-nm node semiconductor structures.

    摘要翻译： 示例性实施例提供了在光刻工艺中使用的三层抗蚀剂（TLR）堆叠，以及通过单个等离子体蚀刻工艺来抵抗再加工的方法。 单个等离子体蚀刻工艺可用于去除在单个工艺中需要重新加工的TLR堆叠的一个或多个部分/层。 然后可以重新形成去除的部分/层，并导致用于随后的光致抗蚀剂（PR）处理的返工TLR堆叠。 所公开的等离子体蚀刻抗蚀剂返修方法可以是用于制造例如子45nm节点半导体结构的单镶嵌或双镶嵌三层图案化工艺中的快速，简单和成本有效的工艺。