ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
    22.
    发明申请
    ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
    全球快门像素像素分离结构,制造方法和设计结构

    公开(公告)号:US20130164877A1

    公开(公告)日:2013-06-27

    申请号:US13766952

    申请日:2013-02-14

    Abstract: Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.

    Abstract translation: 像素传感器单元,例如CMOS光学成像器,制造和设计结构的方法被提供有防止载流子漂移到扩散区域的隔离结构。 像素传感器单元包括感光区域和与感光区域相邻的栅极。 像素传感器单元还包括与栅极相邻的扩散区域。 像素传感器单元还包括位于栅极的沟道区域周围和感光区域下方的隔离区域,其防止在光敏区域中收集的电子漂移到扩散区域。

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