公开(公告)号：US20150072504A1

公开(公告)日：2015-03-12

申请号：US14546058

申请日：2014-11-18

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Jeffrey E. Hanrahan ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Dale W. Martin ,  Gerd Pfeiffer ,  James A. Slinkman

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L21/76251 ,  H01L21/04 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324

Abstract: According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

Abstract translation: 根据本文的方法，在第一材料被植入之后，衬底的第一侧被注入第一材料，以将衬底的第一侧的结晶结构从第一结晶状态改变到第二结晶状态。 在植入第一种材料之后，第二种材料沉积在基底的第一面上。 绝缘体层的第一面在衬底的第一侧上与第二材料接合。 在绝缘体层与第二材料结合之后，在绝缘体层的与绝缘体层的第一侧相对的第二侧上形成集成电路器件。 集成电路器件进行热退火。 第一种材料在退火过程中保持衬底的第一面的第二结晶状态。

公开(公告)号：US20140131800A1

公开(公告)日：2014-05-15

申请号：US13676817

申请日：2012-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L21/66 ,  H01L29/16

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

公开(公告)号：US10453987B2

公开(公告)日：2019-10-22

申请号：US15807054

申请日：2017-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Kirk D. Peterson

IPC: H01L31/18 ,  H01L31/103 ,  H01L31/028 ,  H01L31/0232 ,  G02B6/12 ,  H01P1/17 ,  H01L31/02 ,  H01P3/16

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US10211087B2

公开(公告)日：2019-02-19

申请号：US15812320

申请日：2017-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. Jaffe ,  Alvin J. Joseph ,  Qizhi Liu ,  Anthony K. Stamper

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265 ,  H01L21/764 ,  H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/266

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

公开(公告)号：US10191213B2

公开(公告)日：2019-01-29

申请号：US14151138

申请日：2014-01-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Kirk D. Peterson ,  Jed H. Rankin

IPC: G02B6/122 ,  G02B6/125 ,  G02B6/136 ,  G02B6/12 ,  G02B1/04 ,  G02B6/132

Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.

公开(公告)号：US10170418B2

公开(公告)日：2019-01-01

申请号：US15824921

申请日：2017-11-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Mark D. Jaffe ,  Steven M. Shank ,  Anthony K. Stamper

IPC: H01L29/40 ,  H01L23/528 ,  H01L21/768 ,  H01L21/762 ,  H01L21/683 ,  H01L23/522 ,  H01L27/12 ,  H01L29/06 ,  H01L23/485

Abstract: A method for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, includes forming a trench in the device layer. A trench is formed in the device layer. A sacrificial plug is formed in the trench. The handle wafer is removed to reveal the buried insulator layer. The buried insulator layer is partially removed to expose the sacrificial plug at a bottom of the trench. The sacrificial plug is removed. Backside processing of the buried insulator layer is performed. The trench is filled with a conductor to form a contact plug. A final substrate is connected to the buried insulator layer such that the contact plug contacts metallization of the final substrate.

公开(公告)号：US10164596B2

公开(公告)日：2018-12-25

申请号：US15691249

申请日：2017-08-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. Adkisson ,  Panglijen Candra ,  Thomas J. Dunbar ,  Mark D. Jaffe ,  Anthony K. Stamper ,  Randy L. Wolf

IPC: H03H7/00 ,  H03H9/00 ,  H03H3/007 ,  H03H9/56 ,  H03H9/10 ,  H03H9/24 ,  G06F17/50 ,  H03H3/08 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H03H9/15 ,  H03H3/02

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US10141472B2

公开(公告)日：2018-11-27

申请号：US15408004

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Kirk D. Peterson

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/028 ,  G02B6/12 ,  H01P1/17 ,  H01L31/02 ,  H01P3/16

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US10020789B2

公开(公告)日：2018-07-10

申请号：US14840834

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. Adkisson ,  Panglijen Candra ,  Thomas J. Dunbar ,  Mark D. Jaffe ,  Anthony K. Stamper ,  Randy L. Wolf

IPC: H03H9/54 ,  H03H3/08 ,  H03H3/007 ,  H03H9/56 ,  H03H9/10 ,  H03H9/24 ,  G06F17/50 ,  H03H9/02 ,  H03H9/64 ,  H03H3/02 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US09935600B2

公开(公告)日：2018-04-03

申请号：US14940815

申请日：2015-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. Adkisson ,  Panglijen Candra ,  Thomas J. Dunbar ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Anthony K. Stamper ,  Randy L. Wolf

IPC: H03H9/64 ,  H03H3/04 ,  H03H3/08 ,  H03H9/05 ,  H03H9/10 ,  H01L41/09 ,  B81B7/00 ,  B81B7/02 ,  G06F17/50 ,  H03H9/48 ,  H03H9/54 ,  H01P1/205

CPC classification number: H03H3/04 ,  B81B7/008 ,  B81B7/02 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/0973 ,  H03H3/08 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/48 ,  H03H9/542 ,  H03H9/6403 ,  H03H9/6423 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.