公开(公告)号：US09679774B2

公开(公告)日：2017-06-13

申请号：US14217913

申请日：2014-03-18

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler

IPC: H01L21/225 ,  H01L21/324 ,  H01L21/311 ,  H01L21/02 ,  H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/306 ,  H01L21/322 ,  H01L21/263 ,  H01L29/06

CPC classification number: H01L21/2257 ,  H01L21/02238 ,  H01L21/02524 ,  H01L21/0257 ,  H01L21/02595 ,  H01L21/02636 ,  H01L21/2605 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/3221 ,  H01L21/324 ,  H01L29/0623

Abstract: A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes increasing a surface area of at least one of the first and second surfaces. The method further includes oxidizing the increased surface area at a temperature of at least 1000° C. and for a duration of at least 20 minutes.

公开(公告)号：US09618693B2

公开(公告)日：2017-04-11

申请号：US14303862

申请日：2014-06-13

Applicant: Infineon Technologies AG

Inventor： Ventsislav Lavchiev ,  Bernhard Jakoby ,  Ursula Hedenig ,  Thomas Grille ,  Peter Irsigler ,  Thomas Neidhart ,  Thomas Krotscheck Ostermann

IPC: G01J5/02 ,  G02B6/10 ,  G01N21/59 ,  G01N21/77 ,  G01N21/552

CPC classification number: G02B6/102 ,  G01N21/552 ,  G01N21/59 ,  G01N21/7746 ,  G01N2021/7783 ,  G02B6/00

Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.

公开(公告)号：US09496364B2

公开(公告)日：2016-11-15

申请号：US14754907

申请日：2015-06-30

Applicant: Infineon Technologies AG

Inventor： Peter Irsigler ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Helmut Strack

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H03K17/687

CPC classification number: H01L29/516 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/6684 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/78391 ,  H03K17/687

Abstract: In accordance with one component, a power field effect transistor is proposed, including a substrate, a channel, a gate electrode, and a gate insulator. The gate insulator is arranged at least partly between the gate electrode and the channel and includes a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off. Furthermore, a half-bridge circuit is proposed, including a high-side transistor in accordance with the construction according to the disclosure, and a low-side transistor, and also methods and circuits for driving.

Abstract translation: 根据一个部件，提出了一种功率场效应晶体管，其包括衬底，沟道，栅电极和栅极绝缘体。 栅极绝缘体至少部分地布置在栅电极和沟道之间并且包括相对于其极化具有滞后的材料，使得在施加到栅电极的电压之后保持晶体管的开关状态，在电压 已被关闭。 此外，提出了一种半桥电路，包括根据本发明的结构的高边晶体管和低侧晶体管，以及用于驱动的​​方法和电路。

公开(公告)号：US20160190446A1

公开(公告)日：2016-06-30

申请号：US14587007

申请日：2014-12-31

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler ,  Guenther Ruhl

IPC: H01L51/00 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L51/0048 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/0226 ,  C01B31/0461 ,  C01B32/184 ,  C01B32/188 ,  H01L21/02373 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02612 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7781 ,  H01L51/0002 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/932

Abstract: In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.

Abstract translation: 在各种实施例中，提供了形成石墨烯结构的方法。 该方法可以包括形成包括至少一个突起的主体，以及在至少一个突起的外周表面处形成石墨烯层。

公开(公告)号：US20150362841A1

公开(公告)日：2015-12-17

申请号：US14304665

申请日：2014-06-13

Applicant: Infineon Technologies AG

Inventor： Rudolf Zelsacher ,  Peter Irsigler

IPC: G03F7/20

Abstract: A method for exposing a structure on a substrate includes positioning of an invariable reticle and a programmable reticle in a light path between a light source and a layer on a substrate to be exposed to light and exposing the layer on the substrate by light from the light source passing the invariable reticle and the programmable reticle.

Abstract translation: 用于在基板上曝光结构的方法包括将不变的掩模版和可编程掩模版定位在光源和基板上的层之间的光路中以暴露于光，并将来自光的光暴露在基板上的层 源通过不变的掩模版和可编程的掩模版。

公开(公告)号：US20150338285A1

公开(公告)日：2015-11-26

申请号：US14284198

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Jonathan Silvano de Sousa ,  Tobias Frischmuth ,  Peter Irsigler ,  Ulrich Schmid ,  Thomas Grille ,  Ursula Hedenig ,  Sylvicley Figueira da Silva

IPC: G01K7/34 ,  G01K13/00 ,  G01K1/02 ,  B81B3/00

CPC classification number: G01K7/34 ,  B81B3/0021 ,  G01K1/024 ,  G01K13/002

Abstract: Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is configured to adjust a capacitive value based on a temperature of the deflectable membrane.

Abstract translation: 本文公开的各种实施例包括电容式温度计，其包括可偏转膜和感测电极。 可偏转膜构造成基于可偏转膜的温度调节电容值。

公开(公告)号：US20150162406A1

公开(公告)日：2015-06-11

申请号：US14102883

申请日：2013-12-11

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Peter Irsigler ,  Holger Huesken ,  Roman Baburske

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/1095 ,  H01L29/0603 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor device includes a pn junction between a drift zone and a charge-carrier transfer region in a semiconductor body. An access channel provides a permanent charge carrier path connecting the drift zone with a recombination region through a separation region between the drift zone and the recombination region. The access channel adjusts a plasma density in the drift zone and the recombination region.

Abstract translation: 半导体器件包括在半导体本体中漂移区与电荷 - 载流子转移区之间的pn结。 接入通道提供通过漂移区和复合区之间的分离区连接漂移区与复合区的永久电荷载流子路径。 进入通道调整漂移区和复合区中的等离子体密度。

公开(公告)号：US20220285550A1

公开(公告)日：2022-09-08

申请号：US17824198

申请日：2022-05-25

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L23/48 ,  H01L27/06 ,  H01L29/861 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/45 ,  H01L21/74 ,  H01L29/423

Abstract: A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

公开(公告)号：US11069626B2

公开(公告)日：2021-07-20

申请号：US16385337

申请日：2019-04-16

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Oliver Hellmund ,  Peter Irsigler ,  Hanno Melzner ,  Stefan Miethaner ,  Sebastian Schmidt ,  Hans-Joachim Schulze

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00 ,  H01L25/07 ,  H01L23/29

Abstract: A molding compound and a semiconductor arrangement with a molding compound are disclosed. The molding compound includes a matrix and a filler including filler particles. The filler particles each include a core with an electrically conducting or a semiconducting material and an electrically insulating cover.

公开(公告)号：US20200309686A1

公开(公告)日：2020-10-01

申请号：US16829364

申请日：2020-03-25

Applicant: Infineon Technologies AG

Inventor： Thomas Grille ,  Cristina Consani ,  Peter Irsigler ,  Bernhard Jakoby ,  Thomas Krotscheck Ostermann ,  Gerald Puehringer ,  Christian Ranacher ,  Andreas Tortschanoff

IPC: G01N21/3518 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/16 ,  H01L31/0368 ,  H01L31/18

Abstract: A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.