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    MULTI-ELECTRODE PECVD SOURCE
    21.
    发明申请
    MULTI-ELECTRODE PECVD SOURCE 有权
    多电极PECVD源

    公开(公告)号：US20100080933A1

    公开(公告)日：2010-04-01

    申请号：US12353638

    申请日：2009-01-14

    申请人： Jozef Kudela ,  John M. White

    发明人： Jozef Kudela ,  John M. White

    IPC分类号： C23C16/505

    CPC分类号： C23C16/5096 ,  C23C16/54 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32752

    摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

    摘要翻译： 本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。 所述方法和装置通常包括多个电极。 电极连接到RF电源，该电源使电极彼此相位不相位。 相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。 处理气体可以通过电极和/或电绝缘构件输送和/或排出。 由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

    Tightly fitted ceramic insulator on large area electrode
    22.
    发明授权
    Tightly fitted ceramic insulator on large area electrode 有权
    在大面积电极上紧密配合陶瓷绝缘子

    公开(公告)号：US09068262B2

    公开(公告)日：2015-06-30

    申请号：US13110184

    申请日：2011-05-18

    申请人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

    发明人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

    IPC分类号： C23C16/455 ,  C23C16/509 ,  H01J37/32

    CPC分类号： B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

    摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    摘要翻译： 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

    Multi-electrode PECVD source
    23.
    发明授权
    Multi-electrode PECVD source 有权
    多电极PECVD源

    公开(公告)号：US08438990B2

    公开(公告)日：2013-05-14

    申请号：US12353638

    申请日：2009-01-14

    申请人： Jozef Kudela ,  John M. White

    发明人： Jozef Kudela ,  John M. White

    IPC分类号： C23C16/00 ,  H01L21/00

    CPC分类号： C23C16/5096 ,  C23C16/54 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32752

    摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

    摘要翻译： 本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。 所述方法和装置通常包括多个电极。 电极连接到RF电源，该电源使电极彼此相位不相位。 相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。 处理气体可以通过电极和/或电绝缘构件传送和/或抽出。 由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

    RPSC AND RF FEEDTHROUGH
    28.
    发明申请
    RPSC AND RF FEEDTHROUGH 审中-公开
    RPSC和RF FEEDTHROUGH

    公开(公告)号：US20090151636A1

    公开(公告)日：2009-06-18

    申请号：US12271613

    申请日：2008-11-14

    申请人： John M. White ,  Bradley O. Stimson ,  Jozef Kudela

    发明人： John M. White ,  Bradley O. Stimson ,  Jozef Kudela

    IPC分类号： C23C16/513 ,  C23C16/511

    CPC分类号： H01J37/32697 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32862

    摘要： The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.

    摘要翻译： 本发明通常包括具有组合成单个单元的RF扼流圈和远程等离子体源的装置。 工艺气体可以经由可被作为RF电极驱动的喷头组件引入室。 气体供给管可以将处理气体和清洁气体提供给处理室。 气体供给管的内部可以保持在零RF场，以避免气体进料管内的过早气体击穿，这可能在处理期间导致气体源和喷头之间的寄生等离子体形成。 点燃气体供给管内的清洁气体等离子体允许等离子体更靠近处理室被点燃。 因此，RF电流在沉积期间沿着设备的外部行进，并且在将等离子体馈送到处理室之前，微波电流点燃设备内的等离子体。

    Substrate support with gas introduction openings
    30.
    发明授权
    Substrate support with gas introduction openings 有权
    衬底支撑与气体导入孔

    公开(公告)号：US08853098B2

    公开(公告)日：2014-10-07

    申请号：US13401755

    申请日：2012-02-21

    申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/687 ,  H01L21/683

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。