摘要:
An air purifier has a housing, a motor, a fan, a filtering net, and a power plug. The motor and the fan are positioned in the housing. The filtering net is joined to the front of the housing. The power plug includes a rotatable member and a pair of conductive members; the conductive members have ring-shaped portions concentrically arranged in a chamber of the housing, and are electrically connected to the motor; the rotatable member is rotatably received in the chamber, and has a pair of copper strips, which stick out at outer ends for connection with a power socket, and which constantly touch a respective one of the concentric ring-shaped portions from inner ends in the rotation of the rotatable member for adjustment of the position of the air purifier.
摘要:
An air purifier has a rotatable power plug capable to be inserted directly into a common socket and to be turned around to suit to different directions and positions of various sockets to increase facility in use. Besides, the body of the air purifier is provided with a bulb inside and a bulb switch on an upper side to turn on or turn off the bulb, thus also serving as a lamp lighting at night.
摘要:
Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
摘要:
Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.
摘要:
A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.
摘要:
A WLCSP method comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer to cover metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent chips; thinning first packaging layer to expose metal bumps; forming a groove on front surface of first packaging layer along each scribe line by cutting along a straight line extended by two ends of scribe line exposed on front surface of un-covered ring; grinding back surface of wafer to form a recessed space and a support ring at the edge of the wafer; depositing a metal layer at bottom surface of wafer in recessed space; cutting off the edge portion of wafer; and separating individual chips from wafer by cutting through first packaging layer, the wafer and metal layer along groove.
摘要:
The invention generally relates to a packaging method of an ultra-thin chip, more specifically, the invention relates to a method for packaging the ultra-thin chip with solder ball thermo-compression in wafer level packaging process. The method starts with disposing solder balls on metal pads arranged on the front surface of semiconductor chips that are formed at the front surface of a semiconductor wafer. The solder balls are soften by heating the wafer, a compression plate is applied with a pressure on the top ends of the solder balls thus forming a co-planar top surface at the top ends of the solder balls. A molding compound is deposited on the front surface of the wafer with the top ends of the solder balls exposed. The wafer is then ground from its back surface to reduce its thickness to achieve ultra-thin chip.
摘要:
A chip-scale packaging method, with bottom and side of a semiconductor chip encapsulated, includes the following steps: attaching backside of a thinned semiconductor wafer to a dicing tape; separating individual chips by cutting from front side of the wafer at scribe line but not cut through the dicing tape; flipping and attaching the wafer onto a top surface of a double-sided tape, then removing the dicing tape; attaching bottom surface of the double-sided tape on a supporting plate; filling the space between adjacent chips and covering the whole wafer backside with a molding material; flipping the whole structure and remove the supporting plate; placing solder balls at corresponding positions on electrodes of each chip and performing backflow treatment; finally separating individual chip packages by cutting through molding material at the space between adjacent chip packages with molding material encapsulating the bottom and side of each individual semiconductor chip.