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    SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES
    21.
    发明申请
    SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES 有权
    具有光传输载体基板的固态传感器装置及相关系统，方法和装置

    公开(公告)号：US20150243835A1

    公开(公告)日：2015-08-27

    申请号：US14706827

    申请日：2015-05-07

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/62 ,  H01L25/075 ,  H01L33/48 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/14687 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/035209 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

    Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. in some embodiments, the individual semiconductor structures are simulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

    Abstract translation: 具有固态换能器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，从半导体器件组件模拟各个半导体结构，并且包括连接到每个单个半导体结构的载体衬底的一部分。

    SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS
    22.
    发明申请
    SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS 有权
    固体状态传感器装置，包括具有集成静电放电保护的装置，以及相关的系统和方法

    公开(公告)号：US20150171138A1

    公开(公告)日：2015-06-18

    申请号：US14460297

    申请日：2014-08-14

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

    IPC: H01L27/15 ,  H01L23/60 ,  H01L33/38

    CPC classification number: H01L27/15 ,  H01L23/60 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

    Abstract translation: 具有集成静电放电保护和相关系统和方法的固态传感器装置在本文中公开。 在一个实施例中，固态换能器装置包括固态发射器和由固态发射器承载的静电放电装置。 在一些实施例中，静电放电装置和固态发射器共用共同的第一触点和公共第二触点。 在另外的实施例中，固态照明装置和静电放电装置共享共同的外延衬底。 在另外的实施例中，静电放电装置位于固态照明装置和支撑基板之间。

    SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING
    23.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING 有权
    具有可接触电极的固态照明装置及其制造方法

    公开(公告)号：US20150144986A1

    公开(公告)日：2015-05-28

    申请号：US14614247

    申请日：2015-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

    IPC: H01L33/38

    CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

    Abstract translation: 本文描述了具有发光模具，组件和制造方法的发光管芯和固态照明（“SSL”）器件的各种实施例。 在一个实施例中，发光管芯包括被配置为响应于所施加的电压发射光的SSL结构，由SSL结构承载的第一电极以及与SSL结构的第一电极间隔开的第二电极。 第一和第二电极被配置为接收施加的电压。 第一和第二电极都可以通过引线键合从SSL结构的同一侧进入。

    LIGHT-EMITTING METAL-OXIDE-SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS
    25.
    发明申请
    LIGHT-EMITTING METAL-OXIDE-SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS 有权
    发光金属氧化物半导体器件及相关系统，器件和方法

    公开(公告)号：US20140368123A1

    公开(公告)日：2014-12-18

    申请号：US13918655

    申请日：2013-06-14

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

    IPC: H01L33/06 ,  H05B33/08

    CPC classification number: H01L33/0041 ,  F21V23/003 ,  F21Y2115/10 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H05B33/08

    Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

    Abstract translation: 公开了固态换能器（“SST”）装置的各种实施例。 在几个实施例中，光发射器件包括金属氧化物半导体（MOS）电容器，可操作地耦合到MOS电容器的有源区和可操作地耦合到有源区的体半导体材料。 有源区可以包括至少一个量子阱，配置成在第一偏压下存储第一电荷载流子。 体半导体材料被布置成在第二偏压下向有源区域提供第二电荷载流子，使得有源区域发射UV光。

    SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES
    26.
    发明申请
    SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES 有权
    具有光传输载体基板的固态传感器装置及相关系统，方法和装置

    公开(公告)号：US20140203239A1

    公开(公告)日：2014-07-24

    申请号：US13747182

    申请日：2013-01-22

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

    IPC: H01L31/02 ,  H01L31/0352 ,  H01L33/58 ,  H01L31/0236

    CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/14687 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/035209 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

    Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

    Abstract translation: 具有固态换能器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射性的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，各个半导体结构从半导体器件组件分离，并且包括连接到每个单个半导体结构的载体衬底的一部分。

    SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING
    28.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING 有权
    具有低接触电阻的固态照明装置和制造方法

    公开(公告)号：US20140014999A1

    公开(公告)日：2014-01-16

    申请号：US14028784

    申请日：2013-09-17

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Martin F. Schubert

    IPC: H01L33/42

    CPC classification number: H01L33/42 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L33/387 ,  H01L33/40 ,  H01L2933/0016

    Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material.

    Abstract translation: 本文公开了具有改进的触点和相关的制造方法的固态照明（“SSL”）装置。 在一个实施例中，SSL装置包括第一半导体材料，与第一半导体材料间隔开的第二半导体材料，以及第一和第二半导体材料之间的有源区。 SSL设备还包括在第一或第二半导体材料之一上的接触。 接触包括第一导电材料和与第一或第二导电材料之一接触的多个接触元件。 接触元件分别包括不同于第一导电材料的第二导电材料的一部分。

    SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING
    29.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING 有权
    具有可接触电极的固态照明装置及其制造方法

    公开(公告)号：US20130285107A1

    公开(公告)日：2013-10-31

    申请号：US13926799

    申请日：2013-06-25

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

    IPC: H01L33/36

    CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

    Abstract translation: 本文描述了具有发光模具，组件和制造方法的发光管芯和固态照明（“SSL”）器件的各种实施例。 在一个实施例中，发光管芯包括被配置为响应于所施加的电压发射光的SSL结构，由SSL结构承载的第一电极以及与SSL结构的第一电极间隔开的第二电极。 第一和第二电极被配置为接收施加的电压。 第一和第二电极都可以通过引线键合从SSL结构的同一侧进入。

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