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公开(公告)号：US07618859B2
公开(公告)日：2009-11-17
申请号：US12219577
申请日：2008-07-24
IPC分类号： H01L21/8242
CPC分类号： H01L21/02197 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02186 , H01L21/02266 , H01L21/02304 , H01L21/02337 , H01L21/31691 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1
摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1
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22.发明授权Thin-film capacitor and method for fabricating the same, electronic device and circuit board 有权薄膜电容器及其制造方法，电子器件和电路板公开(公告)号：US07456078B2
公开(公告)日：2008-11-25
申请号：US11393910
申请日：2006-03-31
IPC分类号： H01L21/20
CPC分类号： H01L23/5223 , H01G4/33 , H01L23/3114 , H01L23/49822 , H01L23/49827 , H01L23/50 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L28/55 , H01L28/65 , H01L2224/0231 , H01L2224/0401 , H01L2224/05155 , H01L2224/05552 , H01L2224/0557 , H01L2224/0603 , H01L2224/06102 , H01L2224/1147 , H01L2224/13022 , H01L2224/13023 , H01L2224/13025 , H01L2224/131 , H01L2224/14 , H01L2224/16 , H01L2224/16225 , H01L2224/2518 , H01L2224/32225 , H01L2224/73204 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19103 , H01L2924/30105 , H01L2924/30107 , H05K1/0231 , H05K1/162 , H05K1/185 , H05K2201/0179 , H05K2201/09481 , H05K2201/10712 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.
摘要翻译： 薄膜电容器包括形成在基底基板10上并包括第一电容器电极14，形成在第一电容器电极14上的电容器电介质膜16的电容器部分20和形成在电容器电介质膜16上的第二电容器电极18 ; 引出电极26a，26b从第一电容器电极14或第二电容器电极18引出，并由阻止氢或水扩散的导电阻挡膜形成; 以及用于连接到外部并连接到引出电极26a，26b的外部连接电极34a，34b。
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公开(公告)号：US07326989B2
公开(公告)日：2008-02-05
申请号：US11066540
申请日：2005-02-28
CPC分类号： H01G4/33 , H01L27/0629 , H01L27/0805 , H01L28/40
摘要： A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.
摘要翻译： 提供了一种薄膜电容器，其包括单晶高介电常数介电层。 薄膜电容器具有单晶硅衬底，在单晶硅衬底上外延生长的单晶中间层，在单晶中间层外延生长的单晶下电极，外延生长在单晶硅介电层上的单晶高介电常数电介质层 下电极层，形成在单晶高介电常数介质层上的上电极层，以及在多个位置连接到下电极层和上电极层的多个导体端子。
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公开(公告)号：US07251117B2
公开(公告)日：2007-07-31
申请号：US10940605
申请日：2004-09-15
IPC分类号： H01G4/228
CPC分类号： H01L28/56 , H01G4/008 , H01G4/1209 , H01G4/33 , H01L27/016 , H01L28/65
摘要： A semiconductor device having the thin film capacitor includes a first electrode formed on a substrate, a capacitor insulating film containing a laminated film, which is constructed by laminating an amorphous dielectric film and a polycrystalline dielectric film via a wave-like interface, on the first electrode, and a second electrode formed on the capacitor insulating film.
摘要翻译： 具有薄膜电容器的半导体器件包括形成在基板上的第一电极，包含叠层膜的电容器绝缘膜，其通过波形界面层压无定形电介质膜和多晶电介质膜，第一 电极和形成在电容器绝缘膜上的第二电极。
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公开(公告)号：US07227736B2
公开(公告)日：2007-06-05
申请号：US11057193
申请日：2005-02-15
CPC分类号： H01L27/0805 , H01L21/76877 , H01L24/11 , H01L28/40 , H01L2224/06102 , H01L2224/1147 , H01L2224/13023 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed an a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).
摘要翻译： 电容器装置包括由形成有基板（10）的下部电极（12），电介质膜（14）和上部电极（16）构成的电容器Q。 覆盖电容器Q的绝缘膜（18）; 形成在上电极（16）的连接部分（16a）上的绝缘膜（18）中的第一接触孔（18a）; 形成在第一接触孔（18a）中的用于防止焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸块（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），并与第一接触孔 18 a）在突出部分（16a）上。
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公开(公告)号：US06853051B2
公开(公告)日：2005-02-08
申请号：US10327651
申请日：2002-12-24
IPC分类号： H01G4/33 , H01L21/02 , H01L21/768 , H01L23/50 , H01L27/01 , H01L27/108 , H01L27/13
CPC分类号： H01L27/016 , H01L21/76804 , H01L21/76895 , H01L23/50 , H01L27/13 , H01L28/40 , H01L28/55 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.
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公开(公告)号：US06803617B2
公开(公告)日：2004-10-12
申请号：US10340713
申请日：2003-01-13
IPC分类号： H01G706
CPC分类号： H01L28/55 , H01L27/0805
摘要： The capacitor comprises an lower electrode 22, a dielectric film 30 formed on the lower electrode 22, a floating electrode 20 formed on the dielectric film 30, a dielectric film 50 formed on the floating electrode 40 and having a film orientation different from that of the dielectric film 30, and an upper electrode 80 formed on the dielectric film 50, whereby various characteristics depending on film orientations of the dielectric films can be simultaneously improved.
摘要翻译： 电容器包括下电极22，形成在下电极22上的电介质膜30，形成在电介质膜30上的浮动电极20，形成在浮动电极40上并且具有不同于 电介质膜30和形成在电介质膜50上的上电极80，由此可以同时改善取决于电介质膜的膜取向的各种特性。
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28.发明授权Capacitive element, method of manufacture of the same, and semiconductor device 有权电容元件及其制造方法以及半导体器件公开(公告)号：US08264063B2
公开(公告)日：2012-09-11
申请号：US12222764
申请日：2008-08-15
CPC分类号： H01L28/55 , H01G4/33 , H01L24/73 , H01L27/0805 , H01L28/65 , H01L28/75 , H01L2224/16225 , H01L2224/16265 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/12044 , H01L2924/1515 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107 , H01L2924/3011 , Y10S257/924 , Y10S438/957 , Y10T29/435 , H01L2924/00012 , H01L2924/00
摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。
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公开(公告)号：US20110073993A1
公开(公告)日：2011-03-31
申请号：US12926733
申请日：2010-12-07
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
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公开(公告)号：US07867869B2
公开(公告)日：2011-01-11
申请号：US10458678
申请日：2003-06-11
IPC分类号： H01L21/203
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
摘要翻译： 本发明提供了一种新颖的电容器元件，层叠薄膜器件以及可以适当地调节电容对电压的依赖性的电路，以及用于制造这种电容器元件和层叠薄膜器件的技术。 在包括一对电极层和设置在电极层之间的电介质层的电容器元件中，在电介质层中设置注入离子的阱区，电极层之间的CV曲线偏移或偏移 在相对于电压轴的正方向和负方向的至少一个方向上。
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