Lateral field emitter device and method of manufacturing same
    21.
    发明授权
    Lateral field emitter device and method of manufacturing same 失效
    侧面场发射器装置及其制造方法

    公开(公告)号:US5445550A

    公开(公告)日:1995-08-29

    申请号:US173739

    申请日:1993-12-22

    CPC classification number: H01J1/3042 H01J3/022 H01J2329/00

    Abstract: Lateral luminescent field emitter devices for use in flat panel displays and a method of manufacturing are described. The device comprises a flat substrate, an anode disposed on the substrate, and a cathode disposed on the substrate, the cathode providing an electron emission surface capable of emitting electrons laterally across a gap to a major portion of an adjacent surface of the anode.

    Abstract translation: 描述了用于平板显示器的侧面发光场发射器件和制造方法。 该器件包括平坦的衬底,设置在衬底上的阳极和设置在衬底上的阴极,阴极提供能够横向跨过阳极的相邻表面的主要部分的间隙发射电子的电子发射表面。

    Method of making a field emitter device using randomly located nuclei as
an etch mask
    23.
    发明授权
    Method of making a field emitter device using randomly located nuclei as an etch mask 失效
    使用随机定位的核作为蚀刻掩模制造场发射器件的方法

    公开(公告)号:US5312514A

    公开(公告)日:1994-05-17

    申请号:US52958

    申请日:1993-04-23

    Applicant: Nalin Kumar

    Inventor: Nalin Kumar

    Abstract: Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.

    Abstract translation: 制造具有亚微米低功函数发射尖端而不使用光刻的场发射极器件的方法。 该方法包括通过蒸发或溅射包含随机定位的离散核的不连续蚀刻掩模来原位沉积。 在一个实施例中,离子蚀刻被施加到由不连续掩模覆盖的低功函数材料,以在其中具有金字塔形发射尖端的低功函数材料中形成谷。 在另一个实施例中,离子蚀刻被施加到由不连续掩模覆盖的导电基底材料,以在基底材料中形成具有金字塔形基底尖端的谷部。 然后用低功函数材料涂覆基材以在其上形成发射末端。

    Forming via holes in a multilevel substrate in a single step
    24.
    发明授权
    Forming via holes in a multilevel substrate in a single step 失效
    在单级步骤中通过多层衬底中的孔形成

    公开(公告)号:US5227013A

    公开(公告)日:1993-07-13

    申请号:US735572

    申请日:1991-07-25

    Applicant: Nalin Kumar

    Inventor: Nalin Kumar

    Abstract: A method for forming via holes in a multilayer structure in a single step. The invention includes disposing over a base a first layer comprising first metal lines beneath a first dielectric, disposing over the first layer a second layer comprising second metal lines beneath a second dielectric such that a portion of each first metal line is not beneath any second metal line, and forming via holes which extend through the second dielectric to the second metal lines and through the second dielectric and the first dielectric to the portions of the first metal lines. Thereafter conductive metal can be deposited in the via holes. The method is particularly well suited for fabricating copper/polymer substrates.

    Abstract translation: 一种在一个步骤中在多层结构中形成通孔的方法。 本发明包括在基底上设置包括在第一电介质下方的第一金属线的第一层,在第一层上设置第二层,第二层包括第二电介质下面的第二金属线,使得每个第一金属线的一部分不在任何第二金属之下 并且形成通过第二电介质延伸到第二金属线并且通过第二电介质和第一电介质延伸到第一金属线的部分的通孔。 此后,导电金属可以沉积在通孔中。 该方法特别适用于制造铜/聚合物基材。

    Field emission based thermoelectric device
    26.
    发明申请
    Field emission based thermoelectric device 审中-公开
    基于场发射的热电器件

    公开(公告)号:US20050016575A1

    公开(公告)日:2005-01-27

    申请号:US10866429

    申请日:2004-06-12

    CPC classification number: H01L35/00

    Abstract: This invention describes novel architectures for enhancing the efficiency of thermoelectric devices by incorporating high thermal resistivity and high electrical conductivity sections based on field emission devices. The uses of such devices include coolers and electricity generators.

    Abstract translation: 本发明描述了通过结合基于场发射器件的高热电阻率和高电导率部分来提高热电器件的效率的新型结构。 这种装置的用途包括冷却器和发电机。

    Field emission light source
    27.
    发明授权
    Field emission light source 失效
    场发射光源

    公开(公告)号:US06573643B1

    公开(公告)日:2003-06-03

    申请号:US09677361

    申请日:2000-10-02

    Abstract: A field emission cathode for use in flat panel displays is described including a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also described along with the use of the cathode to form a fluorescent light source.

    Abstract translation: 描述了用于平板显示器的场发射阴极,其包括沉积在导电材料上以形成发射位点的导电材料层和用作低有效功函数材料的非晶金刚石膜层。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还描述了使用阴极形成计算机屏幕,同时使用阴极来形成荧光光源。

    Field emission display device
    30.
    发明授权
    Field emission display device 失效
    场致发射显示装置

    公开(公告)号:US5763997A

    公开(公告)日:1998-06-09

    申请号:US456453

    申请日:1995-06-01

    Applicant: Nalin Kumar

    Inventor: Nalin Kumar

    Abstract: A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode.

    Abstract translation: 矩阵寻址平板显示器包括平面阴极,当通过放置在平面阴极的每一侧上的两个电极跨越平面阴极的表面产生电场时,可以将电子发射到阳极。 扁平阴极可以由金属陶瓷或非晶金刚石或导电材料和绝缘材料的一些其它组合构成,例如低有效功函数材料。 所产生的电场导致电子在导电绝缘界面处在阴极的表面上跳跃。 在阳极和阴极之间产生的电场使得这些电子轰击阳极上的磷光体层。

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