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    Anthracycline compounds
    22.
    发明授权
    Anthracycline compounds 失效
    蒽环类化合物

    公开(公告)号：US4550159A

    公开(公告)日：1985-10-29

    申请号：US545137

    申请日：1983-10-25

    申请人： Hamao Umezawa ,  Tomio Takeuchi ,  Masa Hamada ,  Hiroshi Naganawa ,  Tsutomu Sawa ,  Takeshi Uchida ,  Masaya Imoto

    发明人： Hamao Umezawa ,  Tomio Takeuchi ,  Masa Hamada ,  Hiroshi Naganawa ,  Tsutomu Sawa ,  Takeshi Uchida ,  Masaya Imoto

    IPC分类号： A61K31/70 ,  A61K31/7028 ,  A61K31/7034 ,  A61K31/704 ,  A61P35/00 ,  C07H15/252 ,  C12P19/56 ,  C12R1/465 ,  A61K31/71 ,  C07H15/24

    CPC分类号： C07H15/252 ,  C12P19/56 ,  C12R1/465

    摘要： An anthracycline compound, ditrisarubicin, of the formula: ##STR1## wherein R represents one of the following substituents (A), (B), and (C): ##STR2## is produced by a process which comprises cultivating a strain of Streptomyces in a suitable culture medium under aerobic conditions, said strain having the ability to produce the anthracycline compound, ditrisarubicin, and then recovering the anthracycline compound, ditrisarubicin, from the cultured medium. This ditrisarubicin, or an acid addition salt of the ditrisarubicin, can be contained as the active ingredient in antitumor agents and in pharmaceutical compositions for treatment of infections induced by gram-positive microorganisms, whereby good results are attainable.

    摘要翻译： 其中R代表以下取代基之一（A），（B）和（C）的蒽环类化合物，二硝基菌素：其中R代表下列取代基之一：（A） C）是通过包括在有氧条件下在合适的培养基中培养链霉菌菌株的方法生产的，所述菌株具有生产蒽环类化合物，二硝酸菌素的能力，然后从培养基中回收蒽环类化合物二硝酸菌素。 这种二硝维菌素或二硝基阿霉素的酸加成盐可以作为活性成分包含在抗肿瘤剂和用于治疗由革兰氏阳性微生物诱导的感染的药物组合物中，从而获得良好的结果。

    Surface-emitting laser, surface-emitting laser array, method of manufacturing surface-emitting laser, method of manufacturing surface-emitting laser array and optical apparatus equipped with surface-emitting laser array
    23.
    发明授权
    Surface-emitting laser, surface-emitting laser array, method of manufacturing surface-emitting laser, method of manufacturing surface-emitting laser array and optical apparatus equipped with surface-emitting laser array 有权
    表面发射激光器，表面发射激光器阵列，制造表面发射激光器的方法，制造表面发射激光器阵列的方法和配备有表面发射激光器阵列的光学装置

    公开(公告)号：US08971367B2

    公开(公告)日：2015-03-03

    申请号：US13880839

    申请日：2011-11-02

    申请人： Tatsuro Uchida ,  Takeshi Uchida

    发明人： Tatsuro Uchida ,  Takeshi Uchida

    IPC分类号： H01S5/00 ,  H01S5/227 ,  H01S5/183 ,  H01S5/20 ,  H01S5/065 ,  H01S5/42

    CPC分类号： H01S5/227 ,  H01S5/0653 ,  H01S5/18313 ,  H01S5/18391 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/18

    摘要： A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (λ: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer.

    摘要翻译： 一种制造表面发射激光器的方法，其允许精确地对准表面浮雕结构的中心位置和电流限制结构的中心位置，并形成浮雕结构，借此，可以在基本横向 和高阶横向模式。 在形成限制结构之后，使用第二和第三蚀刻停止层，沿着第二图案去除半导体层上的电介质膜和第一蚀刻停止层。 浮雕结构由包括下层，中层和上层的三层形成，三层的总厚度等于1/4波长的奇数倍的光学厚度（λ：振荡波长，n：半导体层的折射率 ）。 下层正下方的层是第二蚀刻停止层，第一蚀刻停止层位于该蚀刻停止层上。

    SIGNS-OF-DETERIORATION DETECTOR FOR SEMICONDUCTOR LASER
    25.
    发明申请
    SIGNS-OF-DETERIORATION DETECTOR FOR SEMICONDUCTOR LASER 有权
    用于半导体激光的标识检测器

    公开(公告)号：US20130056621A1

    公开(公告)日：2013-03-07

    申请号：US13597962

    申请日：2012-08-29

    申请人： Takako Suga ,  Takeshi Uchida

    发明人： Takako Suga ,  Takeshi Uchida

    IPC分类号： G01J1/44

    CPC分类号： G01J1/4257 ,  H01S5/0021

    摘要： A signs-of-deterioration detector for a semiconductor laser includes a first light receiving section that acquires first information relating to an optical output of the semiconductor laser and a second light receiving section that acquires second information relating to an intensity distribution of the emission pattern below the lasing threshold of the semiconductor laser. The detector also includes a holding section that holds the first information and the second information at a predetermined time point T1. The detector further includes a deciding section that decides the presence or absence of signs of rapid decrease of the optical output of the semiconductor laser by comparing the first information and the second information at at least one time point Tn (T1

    摘要翻译： 半导体激光器的劣化检测器包括：第一光接收部，其获取与半导体激光器的光输出有关的第一信息;以及第二光接收部，其获取与下述发光图案的强度分布有关的第二信息 半导体激光器的激光阈值。 检测器还包括保持部，其在预定时间点T1保持第一信息和第二信息。 检测器还包括判定部，其通过将至少一个时间点Tn（T1

    Surface emitting laser
    26.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号：US08265114B2

    公开(公告)日：2012-09-11

    申请号：US13124865

    申请日：2010-03-18

    申请人： Yasuhiro Nagatomo ,  Takeshi Uchida

    发明人： Yasuhiro Nagatomo ,  Takeshi Uchida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01S5/0601 ,  H01S5/105 ,  H01S5/205 ,  H01S5/3203 ,  H01S5/3211 ,  H01S5/34333 ,  H01S5/42

    摘要： A surface emitting laser having a laminated structure has a first region and a second region. The first region is a region having at least one guided mode, a propagation mode in which light is propagated in the in-plane direction of a substrate at a laser oscillation wavelength. The second region is a region having a substrate radiation mode in which light is emitted to the side of the substrate at the laser oscillation wavelength.

    摘要翻译： 具有层叠结构的表面发射激光器具有第一区域和第二区域。 第一区域是具有至少一个引导模式的区域，其中光以激光振荡波长在基板的面内方向上传播的传播模式。 第二区域是具有基板辐射模式的区域，其中光以激光振荡波长发射到基板的侧面。

    Apparatus and method of controlling an image forming apparatus
    27.
    发明授权
    Apparatus and method of controlling an image forming apparatus 有权
    控制图像形成装置的装置和方法

    公开(公告)号：US08249479B2

    公开(公告)日：2012-08-21

    申请号：US12796156

    申请日：2010-06-08

    申请人： Nobuyuki Furuya ,  Takeshi Uchida

    发明人： Nobuyuki Furuya ,  Takeshi Uchida

    IPC分类号： G03G15/20 ,  G03G15/00

    CPC分类号： G03G15/6544 ,  G03G15/2039 ,  G03G2215/00936

    摘要： An image forming apparatus is controlled such that the amount of heat supplied to an outer surface recording sheet to be placed onto an outer surface of a book document for fixing a toner image thereon is greater than an amount of heat supplied to each of the other recording sheets to be placed onto an inner side of the book document for fixing a toner image thereon.

    摘要翻译： 控制图像形成装置，使得供给到用于固定调色剂图像的书本文件的外表面上的外表面记录片材的热量大于供应给每个其它记录的热量 要放置在书本文件的内侧的片材，用于固定调色剂图像。

    Surface emitting laser
    28.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号：US07869483B2

    公开(公告)日：2011-01-11

    申请号：US12425745

    申请日：2009-04-17

    申请人： Takeshi Uchida ,  Yasuhiro Nagatomo ,  Yuichiro Hori ,  Mitsuhiro Ikuta

    发明人： Takeshi Uchida ,  Yasuhiro Nagatomo ,  Yuichiro Hori ,  Mitsuhiro Ikuta

    IPC分类号： H01S3/08

    CPC分类号： H01S5/187 ,  H01S5/105 ,  H01S5/3211 ,  H01S5/32341

    摘要： A surface emitting laser which oscillates at a wavelength λ of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided.

    摘要翻译： 一种表面发射激光器，其以包括光子晶体结构的光子晶体层，设置在光子晶体层的一个表面上的有源层和设置在光子晶体的另一个表面上的电极在蓝色波段的波长λ处振荡 用于将电流注入有源层的晶体层。 光子晶体结构的厚度为100nm以上。 激光束朝向与设置有电极的光子晶体层的一侧相反的方向发射。

    Two-level mounting board and crystal oscillator using the same
    29.
    发明授权
    Two-level mounting board and crystal oscillator using the same 有权
    两级安装板和使用相同的晶体振荡器

    公开(公告)号：US07791425B2

    公开(公告)日：2010-09-07

    申请号：US11975753

    申请日：2007-10-22

    申请人： Takeshi Uchida ,  Manabu Ito ,  Tomotaka Kuroda

    发明人： Takeshi Uchida ,  Manabu Ito ,  Tomotaka Kuroda

    IPC分类号： H03B1/00 ,  H03B5/32

    CPC分类号： H01R43/0256 ,  H01R12/52 ,  H05K1/141 ,  H05K3/3447 ,  H05K3/368 ,  H05K2201/09036 ,  H05K2201/09463 ,  H05K2201/10303 ,  H05K2201/1084 ,  H05K2201/10871 ,  H05K2203/1178 ,  Y10T428/24612

    摘要： The present invention relates to a two-level mounting board in which a second substrate is supported horizontally by a metal pin above a first substrate having a mounting electrode on an outer base surface, the free, lower end of the metal pin is inserted in a hole provided in the surface of the first substrate, and the metal pin is affixed by solder to an annular electrode land provided on the surface of the first substrate to form an outer periphery of the hole, wherein part of the ring of the annular electrode land is cut away to open the same. This provides a two-level mounting board in which metal pins can be connected reliably to the first substrate to support the second substrate horizontally, and a crystal oscillator using the same.

    摘要翻译： 本发明涉及一种二级安装板，其中第二基板由位于外基座表面上的具有安装电极的第一基板上的金属销水平支撑，金属销的自由下端插入 并且所述金属销通过焊料固定到设置在所述第一基板的表面上的环形电极焊盘，以形成所述孔的外周，其中所述环形电极的环的一部分 被切开打开一样。 这提供了两级安装板，其中金属引脚可以可靠地连接到第一基板以水平地支撑第二基板，以及使用其的晶体振荡器。