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    Method of forming current barriers in semiconductor lasers
    22.
    发明授权
    Method of forming current barriers in semiconductor lasers 失效
    在半导体激光器中形成电流屏障的方法

    公开(公告)号：US5219785A

    公开(公告)日：1993-06-15

    申请号：US557901

    申请日：1990-07-25

    申请人： David F. Welch ,  Donald R. Scifres ,  William Streifer

    发明人： David F. Welch ,  Donald R. Scifres ,  William Streifer

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/40

    CPC分类号： H01S5/20 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/4031 ,  Y10S148/095

    摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.

    摘要翻译： 一种使用植入来形成具有电流阻挡植入物的半导体激光器或激光器阵列的方法。 形成包括第一导电类型，有源区和第二导电类层的半导体材料激光结构。 在第一实施例中，将第二导电类型的杂质离子注入到第一导电类型层的选定区域中。 注入的离子形成具有第二导电类型的电流阻挡掩埋区域，其间具有电流限制通道。 最后，结构热退火。 在第二个实施方案中，可能是可饱和吸收剂的无序感染杂质通过有源区扩散到第一导电类型的层的选定部分。 扩散将这些层的侧面区域转换成第二导电类型。 将第一导电类型的杂质离子注入穿过侧面区域的均匀深度，以形成第一导电类型的掩埋区域。 电流局限于中心未扩散区域。 最后，结构是热退火的。 还描述了具有单独可寻址的导电触点的激光器阵列。 离子轰击用于产生绝缘表面区域以将相邻的触点彼此隔离。

    Method of forming current barriers in semiconductor lasers
    23.
    发明授权
    Method of forming current barriers in semiconductor lasers 失效

    公开(公告)号：US5193098A

    公开(公告)日：1993-03-09

    申请号：US935475

    申请日：1992-08-24

    申请人： David F. Welch ,  Donald R. Scifres ,  William Streifer

    发明人： David F. Welch ,  Donald R. Scifres ,  William Streifer

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/20 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/4031

    摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.

    Spectrally stable laser diode with internal reflector
    24.
    发明授权
    Spectrally stable laser diode with internal reflector 失效
    具有内部反射器的光谱稳定型激光二极管

    公开(公告)号：US5185754A

    公开(公告)日：1993-02-09

    申请号：US737194

    申请日：1991-07-29

    申请人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

    发明人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

    IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

    CPC分类号： H01S5/1021 ,  H01S5/06213 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

    摘要： A laser diode construction having internal reflectors within the laser cavity to provide a stable spectral mode of laser operation. The laser includes a plurality of contiguous semiconductor layers disposed on a substrate to form a semiconductor body with at least one layer forming an active region. Electrically conductive contacts bias the heterostructure to inject current into the active region and produce lightwaves. Feedback means define two or more tandem resonant optical cavities to achieve lasing operation. The feedback means includes at least one internal light reflector within the semiconductor body. In a preferred embodiment, a pair of spaced apart internal reflectors are provided with the region between the pair also being electrically pumped to define an active internal etalon. Other embodiments have multiple periodic reflectors or combine internal reflectors with feedback gratings or passive windows at the end facets of the body.

    摘要翻译： 激光二极管结构在激光腔内具有内部反射器，以提供激光器操作的稳定光谱模式。 激光器包括设置在基板上的多个连续的半导体层，以形成具有形成有源区的至少一个层的半导体本体。 导电触点偏置异质结构以将电流注入有源区域并产生光波。 反馈意味着定义两个或多个串联谐振光学腔以实现激光操作。 反馈装置包括半导体本体内的至少一个内部光反射器。 在优选实施例中，设置一对间隔开的内部反射器，其间的区域也被电泵浦以限定活动的内标准器。 其他实施例具有多个周期性反射器或将内部反射器与身体的端面处的反馈光栅或无源窗口组合。

    Optical amplifier with folded light path and laser-amplifier combination
    25.
    发明授权
    Optical amplifier with folded light path and laser-amplifier combination 失效
    具有折叠光路和激光放大器组合的光放大器

    公开(公告)号：US5088105A

    公开(公告)日：1992-02-11

    申请号：US675432

    申请日：1991-03-26

    申请人： Donald R. Scifres ,  David F. Welch ,  William Streifer, deceased

    发明人： Donald R. Scifres ,  David F. Welch ,  William Streifer, deceased

    IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/40 ,  H01S5/50

    CPC分类号： H01S5/50 ,  H01S5/06243 ,  H01S5/10 ,  H01S5/1085 ,  H01S5/1243 ,  H01S5/4031

    摘要： An optical amplifier having one or more amplifier regions with a noncollinear light path provided by curved or folded waveguides therein between input, output and reflective surfaces provided, for example, by a low reflectivity front facet and a high reflectivity rear facet. The amplifier regions are electrically pumped via conductive contacts which may be individually addressable for each amplifier region to provide phase control of the array of emitted light. Light is accepted through the front facet by a first amplifier region, is reflected from the rear facet and is emitted through the front facet. If there are multiple amplifier regions, a portion of the light is reflected by the front facet into an adjacent amplifier region. The light path is incident on the front and rear facets at an angle other than normal thereto and preferably at most 10.degree. from normal. The light source may be a laser diode which can be monolithically integrated on the same substrate as the amplifier to form a master oscillator power amplifier (MOPA) device. The laser can be wavelength tunable. The MOPA can also have a steerable output beam.

    摘要翻译： 具有一个或多个具有非直线光路的放大器区域的光放大器区域，其通过弯曲或折叠波导在输入，输出和反射表面之间提供，例如由低反射率正面和高反射率后面提供。 放大器区域经由导电触点电泵浦，该触点可以对于每个放大器区域可单独寻址以提供发射光阵列的相位控制。 光通过第一放大器区域的前面被接受，从后面被反射并通过前面被发射。 如果存在多个放大器区域，则一部分光被前端面反射成相邻的放大器区域。 光路以与其正常不同的角度入射在前面和后面上，优选地与正常情况相比最多为10°。 光源可以是可以与放大器单片集成在同一衬底上的激光二极管，以形成主振荡器功率放大器（MOPA）器件。 激光可以波长可调。 MOPA也可以有一个可控的输出光束。

    GaAs/AlGaAs heterostructure laser containing indium
    26.
    发明授权
    GaAs/AlGaAs heterostructure laser containing indium 失效
    包含铟的GaAs / AlGaAs异质结构激光

    公开(公告)号：US4984242A

    公开(公告)日：1991-01-08

    申请号：US408675

    申请日：1989-09-18

    申请人： Donald R. Scifres ,  David F. Welch ,  John Endriz ,  William Streifer

    发明人： Donald R. Scifres ,  David F. Welch ,  John Endriz ,  William Streifer

    IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/32308 ,  H01S5/34313 ,  H01S5/0021 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/3432

    摘要： GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance.

    摘要翻译： GaAs / AlGaAs异质结构激光器，其在除活性区以外的至少一层中含有铟。 描述了以低浓度添加到包层的铟来匹配包层和有源层之间的晶格常数的实施例，其中以高浓度添加铟以形成应变层，以防止通过其中的缺陷迁移，并且如果接近有源区 降低透明度电流并增加微分增益，其中铟均匀地添加到所有层以抑制缺陷形成，并且其中将铟添加到覆盖层以降低金属化接触电阻。

    Window laser with high power reduced divergence output
    27.
    发明授权
    Window laser with high power reduced divergence output 失效
    具有高功率的窗口激光减少发散输出

    公开(公告)号：US4845725A

    公开(公告)日：1989-07-04

    申请号：US053093

    申请日：1987-05-20

    申请人： David F. Welch ,  Donald R. Scifres

    发明人： David F. Welch ,  Donald R. Scifres

    IPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40

    CPC分类号： H01S5/162 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3428 ,  H01S5/4031

    摘要： A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active region and may have a thickness which is greater than the active region, a refractive index difference with respect to cladding layers which is less than a refractive index difference between the active region and the cladding layers, or both. The waveguide layer may be coupled to the active region via a transition region characterized by a gradual change in the guide mode width of the lightwaves, such as from a tapered increase in thickness of the waveguide layer in a direction away from the active region. The preferred method of making window regions having these transparent waveguides is impurity induced disordering, in which the interfaces between active region and cladding layers is smeared to produce the waveguide layer with increased bandgap and a graded transverse refractive index profile. The laser is characterized by a high power output beam with reduced far field transverse divergence.

    摘要翻译： 一种具有至少一个窗口区域的窗口激光器，其具有与产生光波的有源区域光学耦合的透明波导层。 波导层的特征在于比有源区域更宽的用于光波导的横向模式，并且可以具有大于有源区的厚度，相对于包层的折射率差小于折射率差 有源区和包层，或两者。 波导层可以经由过渡区域耦合到有源区域，该过渡区域的特征在于光波导的引导模式宽度的逐渐变化，例如从远离有源区域的方向上的波导层的厚度的逐渐增加。 制造具有这些透明波导的窗口区域的优选方法是杂质诱导的无序化，其中有源区域和包层之间的界面被弄脏以产生具有增加的带隙和梯度横折射率分布的波导层。 激光器的特征在于具有减小的远场横向发散的高功率输出光束。

    Methods for forming group III-arsenide-nitride semiconductor materials
    28.
    发明授权
    Methods for forming group III-arsenide-nitride semiconductor materials 失效
    形成III族砷化物 - 氮化物半导体材料的方法

    公开(公告)号：US06342405B1

    公开(公告)日：2002-01-29

    申请号：US09576746

    申请日：2000-05-23

    申请人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    发明人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L2100

    CPC分类号： H01S5/3235 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/32366 ,  H01S5/32375

    摘要： Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译： 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。