利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

207 条记录 (耗时 0.034 秒)

    Semiconductor laser device and method of manufacturing the same
    21.
    发明授权
    Semiconductor laser device and method of manufacturing the same 有权
    半导体激光器件及其制造方法

    公开(公告)号：US08193016B2

    公开(公告)日：2012-06-05

    申请号：US12985632

    申请日：2011-01-06

    申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

    摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

    摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    22.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体激光器件及其制造方法

    公开(公告)号：US20110104839A1

    公开(公告)日：2011-05-05

    申请号：US12985632

    申请日：2011-01-06

    申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

    IPC分类号： H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

    摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

    摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

    SEMICONDUCTOR LASER DEVICE AND DISPLAY
    23.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
    半导体激光器件和显示器

    公开(公告)号：US20100290498A1

    公开(公告)日：2010-11-18

    申请号：US12812644

    申请日：2009-09-11

    申请人： Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuhiko Nomura ,  Saburo Nakashima

    发明人： Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuhiko Nomura ,  Saburo Nakashima

    IPC分类号： H01S5/026

    CPC分类号： H01S5/4031 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0216 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/22 ,  H01S5/24 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/405 ,  H01S5/4087 ,  H04N9/3161 ,  H01L2924/00014

    摘要： A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions, a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, and a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the red semiconductor laser element, the green semiconductor laser element and the blue semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively long wavelength is larger than the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively short wavelength.

    摘要翻译： 获得即使在再现白光时在具有不同的激光波长的多个激光元件之间需要大的输出功率差的情况下也能够灵活应对的半导体激光器件。 该半导体激光装置（100）具有具有一个或多个激光束发射部的红色半导体激光元件（10），具有一个或多个激光束发射部的绿色半导体激光元件（30），蓝色半导体 具有一个或多个激光束发射部分的激光元件（50）。 红色半导体激光元件，绿色半导体激光元件和蓝色半导体激光元件中的至少两个半导体激光元件具有发射较长波长的半导体激光元件的激光束发射部的数量大于 发射相对短波长的半导体激光元件的激光束发射部分的数量。

    Semiconductor light-emitting device
    24.
    发明申请
    Semiconductor light-emitting device 审中-公开
    半导体发光装置

    公开(公告)号：US20070205426A1

    公开(公告)日：2007-09-06

    申请号：US11699495

    申请日：2007-01-30

    申请人： Kyoji Inoshita ,  Yasumitsu Kunoh ,  Saburo Nakashima ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    发明人： Kyoji Inoshita ,  Yasumitsu Kunoh ,  Saburo Nakashima ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element and a lead-out electrode. The semiconductor light-emitting element has a light-emitting surface of polygonal shape and an electrode formed on the light-emitting surface. The lead-out electrode is connected to the electrode. In the semiconductor light-emitting device, the electrode is formed along at least two sides of the light-emitting surface. In addition, the lead-out electrode is formed on the electrode, and includes an opening portion which opens toward an upper side of the light-emitting surface.

    摘要翻译： 半导体发光器件包括半导体发光元件和引出电极。 半导体发光元件具有多边形的发光表面和形成在发光表面上的电极。 引出电极连接到电极。 在半导体发光装置中，沿着发光面的至少两侧形成电极。 此外，引出电极形成在电极上，并且包括朝向发光表面的上侧开口的开口部。

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    27.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体激光器件及其制造方法

    公开(公告)号：US20110013659A1

    公开(公告)日：2011-01-20

    申请号：US12919847

    申请日：2009-02-25

    申请人： Kunio Takeuchi ,  Yasumitsu Kunoh ,  Masayuki Hata

    发明人： Kunio Takeuchi ,  Yasumitsu Kunoh ,  Masayuki Hata

    IPC分类号： H01S5/028 ,  H01L21/30

    CPC分类号： H01S5/10 ,  B82Y20/00 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/1064 ,  H01S5/3211 ,  H01S5/34333 ,  H01S5/4031

    摘要： A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.

    摘要翻译： 获得具有能够抑制裂纹的有源层附近的包覆层的半导体激光装置。 该半导体激光器件（100）包括接合到第一半导体器件部分的第一半导体器件部分（120）和支撑衬底（10），并且第一半导体器件部分具有腔体，第一导电类型的第一覆盖层（22 ）具有第一区域（22a），所述第一区域（22a）在与所述空腔延伸的第一方向（方向B）相交的第二方向（方向A）上具有第一宽度，以及具有小于所述第一宽度的第二宽度的第二区域 形成在第一区域上的第二方向，以及形成在第一包层的第二区域上的第一有源层（23）和第二导电型第二覆盖层（24）。

    SEMICONDUCTOR LASER DEVICE AND DISPLAY
    28.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
    半导体激光器件和显示器

    公开(公告)号：US20100284433A1

    公开(公告)日：2010-11-11

    申请号：US12812715

    申请日：2009-09-17

    申请人： Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuhiko Nomura ,  Saburo Nakashima

    发明人： Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuhiko Nomura ,  Saburo Nakashima

    IPC分类号： H01S5/40 ,  H01S5/34 ,  H01S5/343 ,  H01S5/026

    CPC分类号： H04N9/3161 ,  B82Y20/00 ,  H01L2224/48091 ,  H01S5/0216 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/24 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093 ,  H04N9/3105 ,  H04N9/3111 ,  H01L2924/00014

    摘要： A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the green semiconductor laser element, the blue semiconductor laser element and the red semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element whose total output power is relatively small is larger than the number of the laser beam emitting portions of the semiconductor laser element, having a plurality of laser beam emitting portions, whose total output power is relatively large, or the number of the semiconductor laser element, having one laser beam emitting portion, whose output power is relatively large.

    摘要翻译： 获得能够容易地获得期望色调的半导体激光器件。 该半导体激光装置（100）包括具有一个或多个激光束发射部的绿色半导体激光元件（30），具有一个或多个激光束发射部的蓝色半导体激光元件（50）和红色半导体 具有一个或多个激光束发射部分的激光元件（10）。 绿色半导体激光元件，蓝色半导体激光元件和红色半导体激光元件中的至少两个半导体激光元件具有这样的关系：总输出功率相对较小的半导体激光元件的激光束发射部分的数量是 大于具有多个总输出功率相对较大的激光束发射部分的半导体激光元件的激光束发射部分的数量或具有一个激光束发射部分的半导体激光元件的数量，其中， 输出功率比较大。