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    SEMICONDUCTOR DEVICES
    21.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220238433A1

    公开(公告)日：2022-07-28

    申请号：US17453197

    申请日：2021-11-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghoo Shin ,  Sanghoon Ahn ,  Seung Jae Lee ,  Deokyoung Jung ,  Woojin Lee

    IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

    Abstract: A semiconductor device includes a second insulating layer disposed on a substrate and that includes a first trench that extends in a first direction, a first via disposed in the first hole, a first interconnection layer disposed in the first trench on the first via and that has an upwardly upper region, and a third insulating layer disposed on the second insulating layer and that includes a second hole and a second trench connected to the second hole. The first trench has inclined side surfaces such that a width of the first trench increases in a direction toward the substrate, the second hole has inclined side surfaces such that a width of the second hole decreases in the direction toward the substrate, and a lower portion of the second hole is wider than an upper surface of the first interconnection layer.

    SEMICONDUCTOR DEVICES
    24.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220310805A1

    公开(公告)日：2022-09-29

    申请号：US17526046

    申请日：2021-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Hwan Chun ,  Seung Jae Lee ,  Jong Min Baek ,  Kyung Seok Oh ,  Woo Jin Lee

    IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L29/40

    Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

    Circuit for detecting crack in display and electronic device including same
    25.
    发明授权
    Circuit for detecting crack in display and electronic device including same 有权

    公开(公告)号：US11120714B2

    公开(公告)日：2021-09-14

    申请号：US16489608

    申请日：2018-03-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Jae Lee ,  Su Yeon Kim ,  Young Man Lee ,  Woon Bo Yeo ,  Nam Hyeon Jeon

    IPC: G09G3/00 ,  G09G5/10 ,  G09G3/3225

    Abstract: An electronic device disclosed herein includes a cover glass, a display panel exposed through the cover glass, a flexible substrate extending from a periphery of the display panel and bent and positioned on a rear surface of the display panel, a display driver integrated circuit (DDI) disposed on the flexible substrate, a sensing circuit disposed on the flexible substrate and electrically connected with the display driver integrated circuit, signal lines that transmit a signal to sub-pixels arranged on the display panel, and a sensing line passing through a peripheral portion of the display panel and the flexible substrate and electrically connected with at least some of the signal lines through the sensing circuit.

    Reflective diffusion lens and lighting installation including the reflective diffusion lens
    26.
    发明授权
    Reflective diffusion lens and lighting installation including the reflective diffusion lens 有权

    公开(公告)号：US10260710B2

    公开(公告)日：2019-04-16

    申请号：US15220738

    申请日：2016-07-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun Choi ,  Cheoul Young Kim ,  Keun Bum Lee ,  Seung Jae Lee ,  Young Chol Lee ,  Yae Kyung Son

    IPC: F21V13/04 ,  F21V7/00 ,  F21V7/06 ,  F21V5/04

    Abstract: A direct-type reflective diffusion lens and a lighting installation including the reflective diffusion lens. The reflective diffusion lens includes a first reflective surface concave and having a longitudinal cross-section with a parabola shape or normal distribution shape to totally reflect incident light, and a bottom surface comprising a light incident surface concave toward the first reflective surface. The reflective diffusion lens includes a second reflective surface having a longitudinal cross-section inclined by a first angle with respect to a central axis of the lens to totally reflect incident light and a refractive surface connecting the first reflective surface with the bottom surface. The refractive surface includes a first refractive surface having a longitudinal cross-section inclined by a second angle with respect to the central axis and a second refractive surface having a longitudinal cross-section inclined by a third angle with respect to the central axis.

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