公开(公告)号：US20150200334A1

公开(公告)日：2015-07-16

申请号：US14671491

申请日：2015-03-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

Abstract translation: 一种发光二极管，包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上并具有与第一半导体层不同的导电类型的第二半导体层 以及设置在所述第二半导体层上并且被配置为反射从所述有源层发射的光的反射图案，所述反射图案具有异质金属层并且被配置为吸收由所述异质金属层之间的热膨胀系数的差异引起的应力。

公开(公告)号：US20140353679A1

公开(公告)日：2014-12-04

申请号：US14365370

申请日：2012-12-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Chung Hoon Lee ,  Ki Bum Nam

IPC: H01L33/22 ,  H01L33/46 ,  H01L33/38 ,  H01L33/00 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.

Abstract translation: 公开了一种半导体器件及其制造方法。 发光二极管（LED）包括导电衬底和位于导电衬底上的基于氮化镓（GaN）的半导体叠层。 半导体堆叠包括作为半极性半导体层的有源层。 因此，可以提供具有改善的发光效率的LED。

公开(公告)号：US20140328056A1

公开(公告)日：2014-11-06

申请号：US14295134

申请日：2014-06-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Cho ,  Kyung Hee Ye

IPC: H01L33/50 ,  F21V23/06 ,  F21K99/00

CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

Abstract translation: 交流发光装置包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 第一长持续荧光体位于第一发光二极管芯片上以对从第一发光二极管芯片发射的光的一部分进行波长转换，并且第二长持续荧光体位于第二发光二极管芯片上 对从第二发光二极管芯片发射的光的一部分进行波长转换。 第二长持续荧光体的余辉发光期与第一长持续荧光体不同。

公开(公告)号：US20140209940A1

公开(公告)日：2014-07-31

申请号：US14229656

申请日：2014-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Kyung Hee YE ,  Dae Sung Cho ,  Won Cheol Seo ,  Young Eun Yang ,  Sum Geun Lee

IPC: H01L33/08

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/0821 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括单个基板的发光器件，设置在单个基板上的至少两个发光单元，所述至少两个发光单元中的每一个包括第一导电型半导体层， 第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极 第二导电型半导体层，其中所述至少两个发光单元中的两个发光单元共享第一导电类型半导体层。

公开(公告)号：US12142602B2

公开(公告)日：2024-11-12

申请号：US17844653

申请日：2022-06-20

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Ho Joon Lee ,  Seong Gyu Jang ,  Chung Hoon Lee ,  Dae Sung Cho

IPC: H01L25/13 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

公开(公告)号：US12100696B2

公开(公告)日：2024-09-24

申请号：US16200036

申请日：2018-11-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Ho Joon Lee ,  Seong Gyu Jang ,  Chung Hoon Lee ,  Dae Sung Cho

IPC: H01L25/13 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L25/13 ,  H01L25/0756 ,  H01L27/156 ,  H01L33/0093 ,  H01L33/405 ,  H01L33/50 ,  H01L33/62 ,  H01L25/0753 ,  H01L33/38

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

公开(公告)号：US11855052B2

公开(公告)日：2023-12-26

申请号：US17153376

申请日：2021-01-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Sung Cho ,  So Ra Lee

IPC: H01L25/13 ,  H01L33/54 ,  H01L33/62 ,  G09F9/33 ,  H01L25/075

CPC classification number: H01L25/13 ,  H01L33/54 ,  H01L33/62

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate, and micro LEDs disposed on the first substrate, the second micro LED module includes a second substrate, and micro LEDs disposed on the second substrate. The first substrate includes a lower body and a top plate located on the lower body. The lower body is recessed from an edge of the top plate, and the second micro LED module is disposed between recessed lower bodies of adjacent first micro LED modules.

公开(公告)号：US11776987B2

公开(公告)日：2023-10-03

申请号：US17152290

申请日：2021-01-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Sung Cho ,  So Ra Lee

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L27/156 ,  H01L33/486 ,  H01L33/62

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate and micro LEDs disposed on the first substrate. The second micro LED module includes a second substrate and micro LEDs disposed on the second substrate. The second substrate bridges two adjacent first substrates.

公开(公告)号：US20220392879A1

公开(公告)日：2022-12-08

申请号：US17844653

申请日：2022-06-20

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Chang Yeon Kim ,  Ho Joon Lee ,  Seong Gyu Jang ,  Chung Hoon Lee ,  Dae Sung Cho

IPC: H01L25/13 ,  H01L25/075 ,  H01L33/00 ,  H01L27/15 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

公开(公告)号：US20200013928A1

公开(公告)日：2020-01-09

申请号：US16571604

申请日：2019-09-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/48 ,  H01L33/46 ,  H01L33/42 ,  H01L33/12 ,  H01L33/44 ,  H01L33/32 ,  H01L33/14 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/22

Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.