公开(公告)号：US06486557B1

公开(公告)日：2002-11-26

申请号：US09515110

申请日：2000-02-29

申请人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

发明人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

摘要翻译： 集成电路芯片上的多层共面铜镶嵌互连结构包括在集成电路基板上的第一平面互连层，并且具有由具有相对较低的介电常数和相对低的弹性模量的介电材料隔开的多个线导体。 第一平面互连层上的第二平面互连层包括具有高于第一平面互连层的弹性模量和通过其的导电通孔的电介质膜。 通孔选择性地与线路导体接触。 第二平面互连层上的第三平面互连层具有被电介质材料隔开并选择性地与通孔接触的多个线导体。

公开(公告)号：US08163584B2

公开(公告)日：2012-04-24

申请号：US12101627

申请日：2008-04-11

申请人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

发明人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20080066860A1

公开(公告)日：2008-03-20

申请号：US11871504

申请日：2007-10-12

申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

IPC分类号： C23F1/00

CPC分类号： H01L21/306 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76865 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

摘要翻译： 公开了一种在电介质层上处理包括衬底，电介质层和TaN-Ta衬垫的类型的半导体结构的方法和系统。 该方法包括使用XeF 2将至少一部分TaN-Ta衬套完全去除到介电层的步骤。 在优选实施例中，本发明使用XeF2选择性气相蚀刻作为Ta-TaN化学机械抛光（CMP）的替代品作为基本的“衬垫去除工艺”，并且作为“选择性电镀镀层去除工艺”。 在第一次使用中，XeF2用于在铜CMP之后去除金属衬垫TaN-Ta。 在第二次使用中，XeF2蚀刻用于选择性地去除用于在铜导体上形成金属覆盖层的电镀基底（TaN-Ta）。

公开(公告)号：US20080048305A1

公开(公告)日：2008-02-28

申请号：US11932385

申请日：2007-10-31

申请人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

发明人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

IPC分类号： H01L23/495 ,  H01B13/00

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

摘要翻译： 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统（NTE）装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法，该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件，其中两个双层仅在外围边缘处彼此附接，并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时，这些器件具有技术上有用的特性。

公开(公告)号：US07202764B2

公开(公告)日：2007-04-10

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20060189134A1

公开(公告)日：2006-08-24

申请号：US11064561

申请日：2005-02-24

申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/306 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76865 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

公开(公告)号：US20060164194A1

公开(公告)日：2006-07-27

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20050024169A1

公开(公告)日：2005-02-03

申请号：US10915742

申请日：2004-08-11

申请人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

发明人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

IPC分类号： H01H59/00 ,  H01H53/00

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  H01H2001/0078

摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

摘要翻译： 一种开关，其包括基板，细长可动部分，设置在所述部分一侧的一对电触点，设置在该部分的一侧并与所述一对电触头分离的致动电极，其中所述部分，所述触点 并且所述电极设置在所述基板上，其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件，其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

公开(公告)号：US20050007217A1

公开(公告)日：2005-01-13

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US06758223B1

公开(公告)日：2004-07-06

申请号：US09603254

申请日：2000-06-23

申请人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

发明人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

IPC分类号： B08B600

CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  Y10S134/902 ,  Y10S438/906

摘要： A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.

摘要翻译： 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿式清洁剂除去后RIE聚合物材料副产物。