公开(公告)号：US20080293243A1

公开(公告)日：2008-11-27

申请号：US12173803

申请日：2008-07-15

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 例如通过在Ni（P）上施加Sn的薄层，或者通过在Ni（P）上施加薄层的Cu，

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US06698077B2

公开(公告)日：2004-03-02

申请号：US09749080

申请日：2000-12-27

申请人： Stephen L. Buchwalter ,  Evan G. Colgan ,  Sung Kwon Kang ,  Robert L. Wisnieff

发明人： Stephen L. Buchwalter ,  Evan G. Colgan ,  Sung Kwon Kang ,  Robert L. Wisnieff

IPC分类号： B23P1700

CPC分类号： G02F1/1362 ,  H01L27/32 ,  H01L27/3255 ,  Y10T29/4913 ,  Y10T29/4981 ,  Y10T29/49895

摘要： A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

摘要翻译： 一种显示装置的制造方法，在显示基板上形成导电层，并在显示基板上形成像素电极。 使用板将单独制造的有源器件携带到显示器基板。 分别制造的器件连接到导电层和像素电极。

公开(公告)号：US06600224B1

公开(公告)日：2003-07-29

申请号：US09703062

申请日：2000-10-31

申请人： Donald S. Farquhar ,  Raymond T. Galasco ,  Sung Kwon Kang ,  Mark D. Poliks ,  Chandrika Prasad ,  Roy Yu

发明人： Donald S. Farquhar ,  Raymond T. Galasco ,  Sung Kwon Kang ,  Mark D. Poliks ,  Chandrika Prasad ,  Roy Yu

IPC分类号： H01L2312

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/90 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/73267 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/1579 ,  H05K3/244 ,  H05K3/3457 ,  H05K3/4602 ,  H05K3/4614 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2203/0307 ,  H05K2203/061 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/01083

摘要： An electronic interconnection assembly having a thin film bonded to either a glass ceramic or to an organic laminate substrate, and a method for attaching a thin film wiring package to the substrate. Provided is the utilization of adhesives which may be processed at significantly lower temperatures so as to avoid damaging components, the wiring package and interconnection joints. Moreover, pursuant to specific aspects, the joining of the thin film to the substrate may be implemented with the utilization of dendrites.

摘要翻译： 具有与玻璃陶瓷或有机层叠基板结合的薄膜的电子互连组件，以及将薄膜布线包装件附着到基板上的方法。 提供了可以在显着较低温度下处理的粘合剂的使用，以避免损坏组件，布线包和互连接头。 此外，根据具体方面，可以利用枝晶来实现薄膜与基底的接合。

公开(公告)号：US06551931B1

公开(公告)日：2003-04-22

申请号：US09706820

申请日：2000-11-07

申请人： Daniel C. Edelstein ,  Sung Kwon Kang ,  Maurice McGlashan-Powell ,  Eugene J. O'Sullivan ,  George F. Walker

发明人： Daniel C. Edelstein ,  Sung Kwon Kang ,  Maurice McGlashan-Powell ,  Eugene J. O'Sullivan ,  George F. Walker

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  H01L21/2885 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05546 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/15747 ,  H05K3/244 ,  H01L2924/00

摘要： A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

摘要翻译： 提供一种选择性地覆盖与铟或锡青铜及其铜氧化物的互连的方法。 本发明还提供如此形成的互连和铜表面。

公开(公告)号：US08691685B2

公开(公告)日：2014-04-08

申请号：US11657000

申请日：2007-01-23

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions can be achieved through a reaction-preventative or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).

摘要翻译： 在无铅互连中使用Ni（P）和富Sn焊料时，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 金属化，例如通过在Ni（P）上施加薄层的Sn或通过在Ni（P）上施加薄的Cu层）。

公开(公告)号：US20100062597A1

公开(公告)日：2010-03-11

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/60

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US5937320A

公开(公告)日：1999-08-10

申请号：US57205

申请日：1998-04-08

申请人： Panayotis Constantinou Andricacos ,  Madhav Datta ,  Wilma Jean Horkans ,  Sung Kwon Kang ,  Keith Thomas Kwietniak

发明人： Panayotis Constantinou Andricacos ,  Madhav Datta ,  Wilma Jean Horkans ,  Sung Kwon Kang ,  Keith Thomas Kwietniak

IPC分类号： H01L23/485 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05027 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/13006 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/94 ,  H01L24/13 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/3651

摘要： The present invention provides a means of fabricating a reliable C4 flip-chip structure for low-temperature joining. The electrochemically fabricated C4 interconnection has a barrier layer between the electroplated tin-rich solder bump and the ball-limiting metallurgy that protects the terminal metal in the ball-limiting metallurgy from attack by the Sn in the solder. The barrier layer is electroplated through the same photoresist mask as the solder and thus does not require a separate patterning step. A thin layer of electroplated nickel serves as a reliable barrier layer between a copper-based ball-limiting metallurgy and a tin-lead (Sn--Pb) eutectic C4 ball.

摘要翻译： 本发明提供了制造用于低温接合的可靠的C4倒装芯片结构的方法。 电化学制造的C4互连在电镀的富含锡的焊料凸块和限制极限冶金之间具有阻挡层，其保护极限冶金学中的端子金属不被焊料中的Sn的侵蚀。 阻挡层通过与焊料相同的光致抗蚀剂掩模电镀，因此不需要单独的图案化步骤。 电镀镍薄层在铜基极限冶金和锡铅（Sn-Pb）共晶C4球之间作为可靠的阻挡层。

公开(公告)号：US20080038871A1

公开(公告)日：2008-02-14

申请号：US11502380

申请日：2006-08-10

申请人： George Liang-Tai Chiu ,  Sung Kwon Kang

发明人： George Liang-Tai Chiu ,  Sung Kwon Kang

IPC分类号： H01L21/00

CPC分类号： H01L23/3737 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/29347 ,  H01L2224/294 ,  H01L2224/32245 ,  H01L2224/8385 ,  H01L2924/14 ,  Y10T428/254 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： The invention comprises a process for joining a first surface and a second surface where the first surface comprises an initially non-solderable surface which comprises coating the first surface with a solder-adhesion layer to produce a solder-adhesion layer on the first surface and providing a Thermal Interface Material (“TIM”) composition comprising solderable heat-conducting particles in a bondable resin matrix where at least some of the solderable heat-conducting particles comprise a solder surface. The TIM composition is placed between the first surface and the second surface to extend between and be contiguous with both the second surface and the solder-adhesion layer on the first surface. Sufficiently heating the TIM composition results in (a) soldering at least some of the solderable heat-conducting particles to one another; and (b) soldering at least some of the solderable heat-conducting particles to the solder-adhesion layer on the first surface. When the second surface comprises a solderable surface, the particles will also bond to it. When the second surface is not solderable, a solder adhesion layer can be placed on it. The process also includes adhesively bonding the resin matrix to the first surface and the second surface. The first surface can comprise an electronic device such as a semiconductor device and the second surface can comprise a heat sink, such as a solderable heat sink. The invention also comprises a process for improving the heat conductivity of a TIM, an article of manufacture made by the process, and a composition of matter comprising the TIM.

摘要翻译： 本发明包括用于接合第一表面和第二表面的方法，其中第一表面包括最初不可焊接的表面，其包括用焊料粘附层涂覆第一表面以在第一表面上产生焊料粘附层，并提供 一种热粘合材料（“TIM”）组合物，其包含可粘合的树脂基体中的可焊接导热颗粒，其中至少一些可焊接导热颗粒包含焊料表面。 TIM组合物被放置在第一表面和第二表面之间，以在第一表面上与第二表面和焊料粘附层两者之间延伸并与之邻接。 足够加热TIM组合物导致（a）将至少一些可焊接导热颗粒彼此焊接; 和（b）将至少一些可焊接导热颗粒焊接到第一表面上的焊料粘附层。 当第二表面包括可焊接表面时，颗粒也将结合到其上。 当第二表面不可焊接时，可以在其上放置焊料粘附层。 该方法还包括将树脂基体粘合到第一表面和第二表面上。 第一表面可以包括诸如半导体器件的电子器件，并且第二表面可以包括诸如可焊接散热器的散热器。 本发明还包括用于改善TIM的导热性，由该方法制造的制品以及包含该TIM的物质组成的方法。

公开(公告)号：US07115996B2

公开(公告)日：2006-10-03

申请号：US10852142

申请日：2004-05-25

申请人： Daniel C. Edelstein ,  Sung Kwon Kang ,  Maurice McGlashan-Powell ,  Eugene J. O'Sullivan ,  George F. Walker

发明人： Daniel C. Edelstein ,  Sung Kwon Kang ,  Maurice McGlashan-Powell ,  Eugene J. O'Sullivan ,  George F. Walker

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/2885 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05546 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/15747 ,  H05K3/244 ,  H01L2924/00

摘要： A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.