摘要:
In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
摘要:
After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.
摘要:
Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.
摘要:
A hypocycloid reducer 70 for reducing rotation of a flat motor 60 to output the speed-reduced rotation to a drum is provided between the drum and the flat motor 60, a rotor shalt member 65 which is rotated with the same rotation number as the flat motor 60 is axially aligned with the drum is provided on the same side as the flat motor 60. An output rotation body 74 for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member 65 and the output rotation body 74 are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member 65 and the output rotation body 74. Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost.
摘要:
Disclosed is a motor in which a commutator (10) is provided with connecting wires which short-circuit equipotential segments; brushes (21) are constituted by a low-speed brush (21a), a high-speed brush (21b), and a common brush (21c) used in common by the low-speed and high-speed brushes, and are juxtaposed along the circumferential direction. The circumferential brush width (W2) of the high-speed brush is set to be smaller than the circumferential brush width (W1) of the low-speed brush. The high-speed brush and the low-speed brush are formed so that simultaneous sliding contact with equipotential segments (15) can be avoided. Additionally, armature cores (8) are provided such that a plurality of teeth (12) is point-symmetrical about a rotary shaft (3) at equal intervals in the circumferential direction, and the teeth and slots (13) are formed so as to exist alternately at intervals of 90 degrees in the circumferential direction. By virtue of the above configuration, vibration and noise can be reduced while achieving miniaturization and high performance of a motor.
摘要:
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要:
A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.
摘要:
A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection. The connecting conductor portion for relay is sized so that the length of the connecting conductor portion for relay in an extending direction of the predetermined buried interconnection is longer than that of the connecting hole.
摘要:
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要:
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.