公开(公告)号：US20160126065A1

公开(公告)日：2016-05-05

申请号：US14934091

申请日：2015-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32183

Abstract: A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

Abstract translation: 等离子体处理装置包括用于通过电感耦合将处理气体转换为等离子体的等离子体产生单元。 等离子体产生单元包括：第一高频天线，其由具有开放的相对端的涡旋线圈形成，并且在开放端之间的线的中心部分处是高频功率的供电点和通过电容器接地的接地点; 由设置在第一高频天线的第一和第二高频天线元件之间的平面涡流线圈形成的第二高频天线; 以及阻抗调整单元，用于调节从高频电源向第一高频天线观看的电路的谐振频率，该第一高频天线被配置为具有取决于阻抗调节单元的调整的两个谐振频率，当高频功率的频率 改变了

公开(公告)号：US20160118222A1

公开(公告)日：2016-04-28

申请号：US14991383

申请日：2016-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

Abstract translation: 等离子体处理装置包括处理室，其一部分由电介质窗形成; 设置在处理室中的基板支撑单元，用于安装目标基板; 处理气体供应单元，用于向处理室供应处理气体以对目标基板执行等离子体处理; 设置在电介质窗外部的RF天线，用于通过处理室中的感应耦合从处理气体产生等离子体; 以及用于向RF天线提供RF功率的RF电源单元。 RF天线包括具有线圈绕行方向的切口部的单绕线圈或多绕线圈导体， 并且来自RF电源单元的一对RF电力线分别经由切口部分彼此相对地连接到线圈导体的一对线圈端部。

公开(公告)号：US20140216345A1

公开(公告)日：2014-08-07

申请号：US14250783

申请日：2014-04-11

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

公开(公告)号：US20130337635A1

公开(公告)日：2013-12-19

申请号：US13916847

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Mitsuhiro TACHIBANA ,  Hitoshi KATO ,  Takeshi KOBAYASHI ,  Shigehiro MIURA ,  Takafumi KIMURA

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract translation: 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。

公开(公告)号：US20130308681A1

公开(公告)日：2013-11-21

申请号：US13954021

申请日：2013-07-30

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K11/14

CPC classification number: G01K11/14 ,  G01K5/48 ,  H01L21/67248

Abstract: A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.

Abstract translation: 在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ，等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

公开(公告)号：US20130299455A1

公开(公告)日：2013-11-14

申请号：US13942106

申请日：2013-07-15

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Masashi SAITO

IPC: H05H1/24

CPC classification number: H05H1/24 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/334

Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

Abstract translation: 提供了一种加热聚焦环和等离子体蚀刻装置的方法，其能够简化没有虚设基板的加热机构的结构。 等离子体蚀刻装置包括真空处理室; 用作安装基板的安装台的下电极; 设置成面向下电极的上电极; 用于提供处理气体的气体供应单元; 用于向下电极提供高频电力以产生处理气体的等离子体的高频电源; 以及设置在下电极上以围绕基板的周边的聚焦环。 在等离子体蚀刻装置中，通过从设置在真空处理室外侧的光源照射加热光来对聚焦环进行加热。

公开(公告)号：US20210222296A1

公开(公告)日：2021-07-22

申请号：US17056342

申请日：2019-04-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU

IPC: C23C16/455 ,  C23C16/509 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/44

Abstract: A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

公开(公告)号：US20200058467A1

公开(公告)日：2020-02-20

申请号：US16662715

申请日：2019-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

公开(公告)号：US20190115188A1

公开(公告)日：2019-04-18

申请号：US16214599

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20150170882A1

公开(公告)日：2015-06-18

申请号：US14565612

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract translation: 公开了一种等离子体处理装置，其包括：室，被配置为通过等离子体对晶片进行处理; VF电源，被配置为改变要供给到所述室中的高频功率的频率;基座，被配置为将晶片安装在其上; 以及设置成围绕晶片的聚焦环。 从VF电源开始通过等离子体的第一路径通过基座，晶片和等离子体，并且从VF电源开始通过等离子体的第二路径通过基座， 聚焦环和等离子体。 第一路径的反射最小频率不同于第二路径的反射最小频率，并且由VF电源可变的频率范围包括第一和第二路线的反射最小频率。