公开(公告)号：US11004684B2

公开(公告)日：2021-05-11

申请号：US16253380

申请日：2019-01-22

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  H01L21/308 ,  C23C18/16 ,  C23C16/04 ,  C23C14/04 ,  C23C18/18 ,  C23C18/32 ,  C23C18/50 ,  H01L21/311 ,  H01L21/3213

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US20190271084A1

公开(公告)日：2019-09-05

申请号：US16345320

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/31 ,  H01L21/288

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

公开(公告)号：US10224202B2

公开(公告)日：2019-03-05

申请号：US15473810

申请日：2017-03-30

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  H01L21/308 ,  C23C18/16 ,  C23C16/04 ,  C23C14/04

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US10030308B2

公开(公告)日：2018-07-24

申请号：US14384495

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yuichiro Inatomi ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: B05D3/10 ,  C23C18/16 ,  C23C18/30 ,  C23C18/18 ,  C25D17/00 ,  H01L21/768 ,  H01L21/288 ,  H01L23/48 ,  C23C18/38

Abstract: A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

公开(公告)号：US20160284592A1

公开(公告)日：2016-09-29

申请号：US15077988

申请日：2016-03-23

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Hoshino ,  Masato Hamada ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito

IPC: H01L21/768 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/76874 ,  B05D1/005 ,  C23C18/1653 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

Abstract translation: 可以在基板的表面上形成由薄膜形成的粘附层。 在基板上形成粘合层的粘合层形成方法包括在旋转基板2的同时将耦合剂提供到基板2上。基板2以等于或小于300rpm的低速旋转，并且用 IPA被提供到基板2上。

公开(公告)号：US20160247683A1

公开(公告)日：2016-08-25

申请号：US15047690

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: H01L21/288 ,  C23C18/16 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76874 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1889 ,  C23C18/38 ,  C23C18/50 ,  C25D7/12 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.

Abstract translation: 吸附在基板的表面上的催化剂结合到基板上，而不会在基板的凹槽内残留残留物。 催化剂层形成方法包括通过将催化剂溶液32供给到具有凹部2a的基板2上来形成催化剂层22，以将催化剂22A吸附到基板的表面上并到达凹部的内表面; 通过提供冲洗液来冲洗基底2的表面和凹槽2a的内部; 干燥基板2的表面和凹部2a的内部。 此外，通过将含有粘合剂22B的粘合剂溶液34供给到基板2上，基板2的表面上的催化剂22A通过粘合剂22B与基板2结合。

公开(公告)号：US20160190040A1

公开(公告)日：2016-06-30

申请号：US14972623

申请日：2015-12-17

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/481 ,  C23C18/1651 ,  C23C18/1653 ,  C25D5/022 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A seed layer and a barrier layer located outside a wiring layer on a surface of a substrate are easily removed by an etching process. A metal layer 25 composed of the barrier layer 23 and the seed layer 24 is formed on a surface of the substrate 2 and on an inner surface of a recess 2a, and then, a resist pattern is formed on the metal layer. The wiring layer 27 is formed within the recess 2a by supplying a plating liquid from an opening 26a of the resist pattern 26, and then, the metal layer 25 on the surface of the substrate 2 is removed by the etching process. The metal layer 25 is formed by an electroless plating process.

Abstract translation: 通过蚀刻处理容易地去除位于基板表面上的布线层外侧的种子层和阻挡层。 在基板2的表面和凹部2a的内表面上形成由阻挡层23和种子层24构成的金属层25，然后在金属层上形成抗蚀剂图案。 通过从抗蚀剂图案26的开口26a供给电镀液，在凹部2a内形成配线层27，然后通过蚀刻工序除去基板2的表面的金属层25。 金属层25通过化学镀方法形成。

公开(公告)号：US20160013101A1

公开(公告)日：2016-01-14

申请号：US14790119

申请日：2015-07-02

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: H01L21/768 ,  B01J37/02 ,  B01J37/08 ,  B01J23/44 ,  B01J35/00 ,  C23C18/16 ,  B01J21/06

CPC classification number: H01L21/76874 ,  B01J23/44 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1889 ,  C23C18/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

Abstract: A pre-treatment method of plating can suppress a catalyst layer from being peeled off from a substrate. The pre-treatment method of forming the catalyst layer on the substrate includes forming the catalyst layer 22 by adsorbing a catalyst 22a on the substrate 2; and forming a catalyst fixing layer 27 on the catalyst layer 22.

Abstract translation: 电镀的预处理方法可以抑制催化剂层从基板剥离。 在基板上形成催化剂层的预处理方法包括通过在基板2上吸附催化剂22a来形成催化剂层22; 并在催化剂层22上形成催化剂固定层27。

公开(公告)号：US20150147476A1

公开(公告)日：2015-05-28

申请号：US14404205

申请日：2013-05-27

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: C23C18/16

CPC classification number: C23C18/1619 ,  C23C18/1633 ,  C23C18/1651 ,  C23C18/1676 ,  C23C18/1683 ,  C23C18/1893 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76898

Abstract: A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.

Abstract translation: 电镀方法可以提高形成在凹部的内表面上的镀层的厚度的均匀性。 电镀方法包括将形成有凹部的基板装载到壳体中的装载工序; 以及向所述基板供给电镀液体并在所述凹部的内表面形成具有特定功能的镀层的电镀工序。 电镀工艺包括：向基板供给第一电镀液并形成第一镀层的第一电镀工序; 以及第二电镀工艺，其在所述第一电镀工艺之后，将第二电镀液体供应到所述衬底并在所述第一镀层上形成第二镀层。 此外，第一电镀液中所含的添加剂的浓度与第二电镀液中所含的添加剂的浓度不同。

公开(公告)号：US20150140816A1

公开(公告)日：2015-05-21

申请号：US14548794

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/768

CPC classification number: H01L21/76874 ,  B05D3/002 ,  B05D3/02 ,  B05D3/10 ,  C23C18/1893 ,  C23C18/40 ,  C23C18/48 ,  H01L21/76898

Abstract: Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal nanoparticles and a dispersing agent in a solvent containing water; a first heating process of removing moisture contained at least in the catalytic particle-containing film by heating the substrate to a first temperature; and a second heating process of polymerizing the dispersing agent to have a sheet shape by heating the substrate to a second temperature higher than the first temperature after the first heating process and fixing the catalytic metal nanoparticles on a base layer by covering the catalytic metal nanoparticles with the sheet-shaped dispersing agent.

Abstract translation: 催化金属纳米颗粒可以附着在基底上。 电镀用预处理方法包括：在基板表面上形成含催化剂颗粒膜的催化剂颗粒膜成膜方法，该方法是向基板上提供通过分散催化金属纳米粒子制备的催化剂颗粒溶液 和分散剂在含有水的溶剂中; 通过将基板加热至第一温度来除去至少含有催化剂颗粒的膜中含有的水分的第一加热方法; 以及通过将基板加热至高于第一加热处理后的第一温度的第二温度并将分散剂聚合成具有片状的第二加热方法，并且通过用催化金属纳米粒子覆盖催化金属纳米颗粒而将催化金属纳米颗粒固定在基底层上 片状分散剂。