公开(公告)号：US5889806A

公开(公告)日：1999-03-30

申请号：US908938

申请日：1997-08-08

申请人： Seiji Nagai ,  Shiro Yamasaki ,  Masayoshi Koike ,  Kazuyoshi Tomita ,  Tetsu Kachi ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Seiji Nagai ,  Shiro Yamasaki ,  Masayoshi Koike ,  Kazuyoshi Tomita ,  Tetsu Kachi ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/34333

摘要： A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.

摘要翻译： 使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5，一对GaN引导层41和62组成，其中活性层具有比有源层更宽的禁带，以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层，LD分别限制载流子和光。 每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。 结果，载流子被限制在有源层中，并且LD的激光输出被改善。

公开(公告)号：US5846844A

公开(公告)日：1998-12-08

申请号：US598134

申请日：1996-02-07

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

IPC分类号： H01L21/20 ,  H01L21/363 ,  H01L21/84 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/84 ,  H01L33/007 ,  Y10S117/915 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S148/135

摘要： A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

摘要翻译： 满足式Al x Ga y In 1-x-y N，包括x = 0，y = 0和x = y = 0的氮 - 基III族化合物半导体及其制造方法包括以下步骤：形成氧化锌（ZnO） 在中间ZnO层上形成满足式Al x Ga y In 1-x-y N的氮基III半导体层，包括x = 0，y = 0和x = y = 0，并分离中间体ZnO 通过仅用于ZnO层的蚀刻液进行湿法蚀刻。

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US5825789A

公开(公告)日：1998-10-20

申请号：US577620

申请日：1995-12-22

申请人： Yoshiaki Watanabe ,  Satoshi Miyaguchi ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Yoshiaki Watanabe ,  Satoshi Miyaguchi ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/323 ,  H01S3/10 ,  H01S3/083

CPC分类号： H01S5/0201 ,  H01S5/028

摘要： A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.

摘要翻译： 一种在半导体激光器件中形成谐振器的方法包括以下步骤： 用树脂填充围绕波导的侧表面的间隙，用于除了待抛光的端面之外的谐振器; 抛光端面和周围的树脂; 在激光波导和电极嵌入的状态下在抛光的端面上形成预定的光学涂层和树脂; 并除去嵌入树脂。 抛光端面的弯曲和薄膜进入激光波导的侧表面均被防止，从而实现了用于谐振器的镜面涂层的高光滑端面。 此外，根据该方法，任何晶体都用于携带具有谐振器的半导体激光器结构的衬底，即使该晶体是非分裂的。

公开(公告)号：US5604763A

公开(公告)日：1997-02-18

申请号：US423940

申请日：1995-04-19

申请人： Hisaki Kato ,  Norikatsu Koide ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Hisaki Kato ,  Norikatsu Koide ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01S5/02 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0213

摘要： An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.

摘要翻译： 改进的激光二极管由氮化镓化合物半导体（（Al x Ga 1-x）y In 1-y N; 0 （c轴）平行的方向上切割多层涂层和蓝宝石衬底而形成的镜面。 通过用ZnO选择性液体蚀刻剂的湿蚀刻选择性地除去中间氧化锌（ZnO）层，以便在蓝宝石衬底和半导体激光元件层的最底层子层之间形成间隙。 借助于间隙切割半导体激光元件层，并将所得到的切割平面用作激光腔的镜面。

公开(公告)号：US5281830A

公开(公告)日：1994-01-25

申请号：US781910

申请日：1991-10-24

申请人： Masahiro Kotaki ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Masahiro Kotaki ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/32 ,  H01L33/325 ,  H01L33/40

摘要： There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, where 0.ltoreq.x

摘要翻译： 公开了具有pn结的两种类型的氮化镓LED。 氮化镓化合物半导体（Al x Ga 1-x N，其中0 <= x <1）的LED包括n层; 在掺杂p型杂质和照射电子线时显示p型导电的p层，p层与n层的接合; 用于n层的第一电极，以连接到n层，穿过形成在从p层延伸到n层的p层中的孔; 以及p层的第二电极，其形成在由p层中形成的沟槽分隔开的区域中，以便从p层的上表面延伸到所述n层。 LED包括n层; 掺有p型杂质的i层，i层与n层结合; 用于所述n层的第一电极，以连接到n层，穿过形成在从i层的上表面延伸到n层的i层中的孔; 在i层的特定区域中的p型部分，其通过用电子射线转换成p型导电，所述p型部分被形成为使得所述第一电极被所述i层绝缘和分离; 和用于所述p型部件的第二电极。

公开(公告)号：US5186192A

公开(公告)日：1993-02-16

申请号：US804451

申请日：1991-12-10

申请人： Shigeyoshi Netsu ,  Masaki Kameya ,  Yasuyuki Harada ,  Hiroshi Amano

发明人： Shigeyoshi Netsu ,  Masaki Kameya ,  Yasuyuki Harada ,  Hiroshi Amano

IPC分类号： H01L21/00

CPC分类号： H01L21/67023 ,  Y10S134/902

摘要： Device for cleaning silicon wafers having an upper mist-generating chamber with a high frequency oscillator to generate an aqueous hydrofluoric acid mist and a lower region processing chamber separated by a partitioning wall having a shutter to open and close. Silicon wafers are held in an upright position in a rack. The processing chamber and the shutter have gas jets to eject gas between the silicon wafers and water spray heads in the processing chamber to spray water between the silicon wafers.

公开(公告)号：US10033997B2

公开(公告)日：2018-07-24

申请号：US13805704

申请日：2011-06-21

申请人： Yoshiteru Hayashi ,  Takeshi Tanaka ,  Takashi Hashimoto ,  Satoshi Kajita ,  Hiroshi Amano

发明人： Yoshiteru Hayashi ,  Takeshi Tanaka ,  Takashi Hashimoto ,  Satoshi Kajita ,  Hiroshi Amano

IPC分类号： H04N7/32 ,  H04N19/50 ,  H04N19/51 ,  H04N19/44 ,  H04N19/52 ,  H04N19/176 ,  H04N19/61 ,  H04N19/96 ,  H04N19/107 ,  H04N19/86

摘要： An image decoding device is provided that decodes, without an increase in the circuit size, a coded video sequence including a large-size block. The image decoding apparatus includes: a block division unit which divides a current block that is to be decoded and is included in a picture of the coded video sequence, into sub-blocks; an image obtainment unit which obtains, for each of the sub-blocks, image data corresponding to the sub-block from a recording medium; a prediction unit which generates, for each of the sub-blocks, a predicted image of the sub-block, based on the image data obtained by the image obtainment unit; and a reconstruction unit which reconstructs each of the sub-blocks, by adding the predicted image generated for the sub-block to the sub-block.

公开(公告)号：US08633514B2

公开(公告)日：2014-01-21

申请号：US13409798

申请日：2012-03-01

申请人： Shin Hashimoto ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

发明人： Shin Hashimoto ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0

摘要翻译： 提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由AlXGa1-XN（0

公开(公告)号：US20130330913A1

公开(公告)日：2013-12-12

申请号：US14001454

申请日：2011-02-25

申请人： Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L21/02

CPC分类号： H01L21/02365 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L2224/16225

摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.

摘要翻译： 一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。 对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。 这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。