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21.发明申请公开(公告)号：US20180351024A1
公开(公告)日：2018-12-06
申请号：US15612187
申请日：2017-06-02
Applicant: Wisconsin Alumni Research Foundation , The Research Foundation for the State University of New York
Inventor： Zhenqiang Ma , Zhenyang Xia , Qiaoqiang Gan , Haomin Song , Zongfu Yu , Ming Zhou
IPC: H01L31/113 , H01L31/0232 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/032 , H01L27/144 , G01J3/28 , G01J3/42
CPC classification number: H01L31/1136 , G01J1/0209 , G01J1/0488 , G01J1/42 , G01J3/0259 , G01J3/2803 , G01J3/42 , G01J5/0862 , G01J2001/0481 , G01J2003/1213 , H01L27/1443 , H01L31/02327 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/032 , H01L31/1808
Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
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公开(公告)号：US09955087B1
公开(公告)日：2018-04-24
申请号：US15395905
申请日：2016-12-30
Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION
Inventor： Zhenqiang Ma , Munho Kim
IPC: H01L21/00 , H04N5/33 , H01L31/0288 , H01L31/18 , H01L31/0224 , G02B6/122 , G02B6/12
CPC classification number: H04N5/33 , G02B6/122 , G02B2006/12061 , G02B2006/12138 , H01L31/028 , H01L31/0352 , H01L31/1085 , H01L31/1808
Abstract: Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-crystalline germanium with increased radiation absorption in the near infrared region of the electromagnetic spectrum, including at wavelengths of 1550 nm and above.
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公开(公告)号：US09861288B2
公开(公告)日：2018-01-09
申请号：US14329067
申请日：2014-07-11
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Justin Cole Williams , Dong-Wook Park , Amelia Ann Schendel , Solomon Tadesse Mikael
IPC: A61B5/0478 , A61B5/04 , A61B5/00
CPC classification number: A61B5/04001 , A61B5/0478 , A61B5/6868 , A61B2503/40 , A61B2503/42 , A61B2562/046 , A61B2562/125
Abstract: Devices for detecting electrical activity in electrically active biological tissues and methods for using the devices are provided. The devices include an electrode array that is configured for implantation on electrically active biological tissue. The electrode array comprises a plurality of electrode sites comprising one or more layers of transparent, electrically conductive graphene disposed on a transparent substrate.
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24.发明申请公开(公告)号：US20170301432A1
公开(公告)日：2017-10-19
申请号：US15098636
申请日：2016-04-14
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Yei Hwan Jung , Juhwan Lee , Shaoqin Gong
CPC classification number: H01P3/08 , H01P11/003
Abstract: Stretchable high frequency transmission lines and high-frequency filters comprising the transmission lines are provided. The transmission lines provide low power loss, even at microwave and millimeter wave frequencies. The transmission lines are thin and flexible and can be stretched without a significant degradation of their scattering parameters. As a result, the transmission lines have applications as interconnects in stretchable and flexible integrated circuits (IC) and circuit device components, such as flexible transistors and flexible diodes.
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公开(公告)号：US20170298534A1
公开(公告)日：2017-10-19
申请号：US15381652
申请日：2016-12-16
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Jung-Hun Seo
IPC: C30B31/02 , C30B33/02 , C30B29/04 , H01L21/04 , H01L21/324 , H01L29/16 , H01L29/861 , H01L29/66
CPC classification number: C30B31/02 , C30B29/04 , C30B33/02 , H01L21/041 , H01L21/324 , H01L29/1602 , H01L29/6603 , H01L29/861
Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.
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Patent Agency Ranking
26.发明授权公开(公告)号：US08866154B2
公开(公告)日：2014-10-21
申请号：US13831449
申请日：2013-03-14
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Jung-Hun Seo
CPC classification number: H01L29/1602 , H01L29/267 , H01L29/66242 , H01L29/7371 , H01L29/861 , H01L33/04
Abstract: Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.
Abstract translation: 提供包括晶格失配的单晶半导体材料和制造异质结结构的方法的半导体异质结结构。 异质结结构包括至少一个三层结，其包含两层单晶半导体和夹在两层单晶半导体材料之间并分离两层单晶半导体材料的电流隧穿层。 还提供了结合异质结结构的器件，制造器件的方法和使用器件的方法。
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公开(公告)号：US10347790B2
公开(公告)日：2019-07-09
申请号：US15928774
申请日：2018-03-22
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
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28.发明授权公开(公告)号：US10297714B1
公开(公告)日：2019-05-21
申请号：US15945947
申请日：2018-04-05
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
IPC: H01L29/06 , H01L33/06 , H01L33/26 , H01L33/00 , H01L33/16 , H01L33/22 , H01L33/14 , H01L33/44 , H01L33/40
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The light-emitting devices include: a tunneling heterojunction as a hole injector; an n-type contact; and a light-emitting active region disposed between the tunneling heterojunction and the n-type contact. The tunneling heterojunction facilitates interband tunneling hole injection under bias, whereby electrons in the valence band of a p-type group III-nitride semiconductor tunnel directly into the conduction band of the n-type doped semiconductor, resulting in the generation of holes in the p-type group III-nitride.
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29.发明申请公开(公告)号：US20190140120A1
公开(公告)日：2019-05-09
申请号：US15806724
申请日：2017-11-08
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Tzu-Hsuan Chang
IPC: H01L31/0352 , H01L31/0304 , H01L31/11 , G01J1/42
Abstract: Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
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公开(公告)号：US20180277715A1
公开(公告)日：2018-09-27
申请号：US15928774
申请日：2018-03-22
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/32 , H01L33/34
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
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