公开(公告)号：US20100155698A1

公开(公告)日：2010-06-24

申请号：US12459177

申请日：2009-06-26

Applicant: Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L29/12 ,  H01L21/20

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Abstract translation: 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US07666708B2

公开(公告)日：2010-02-23

申请号：US11543352

申请日：2006-10-04

Applicant: Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L51/40 ,  D01C5/00 ,  D01F9/12

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.

Abstract translation: 一种体积掺杂半导体，其为以下至少一种：单晶，细长体和体掺杂半导体，其沿​​着其纵向的任何点为轴线，具有小于500纳米的最大横截面尺寸，以及 具有至少一个具有小于500纳米的最小宽度的部分的独立且体积掺杂的半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度 小于20纳米，或小于10纳米，或甚至更小的5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组合技术来从这样的半导体制造设备。

公开(公告)号：US07554365B2

公开(公告)日：2009-06-30

申请号：US12045725

申请日：2008-03-11

Applicant: Peng Gao ,  Dejian Li ,  Yu Huang

Inventor： Peng Gao ,  Dejian Li ,  Yu Huang

IPC: H03K17/00

CPC classification number: G06F1/04

Abstract: A glitch-free clock switching circuit receives a first clock signal and a second clock signal and outputs a third clock signal corresponding to the first clock signal or a fourth clock signal corresponding to the second clock signal according to a clock switching signal. The glitch-free clock switching circuit switches to output clock signals by stopping output of a clock signal, and then waiting for a predetermined period of time before outputting another clock signal.

Abstract translation: 无毛刺时钟切换电路接收第一时钟信号和第二时钟信号，并根据时钟切换信号输出与第一时钟信号对应的第三时钟信号或对应于第二时钟信号的第四时钟信号。 无毛刺时钟切换电路通过停止时钟信号的输出而切换为输出时钟信号，然后在输出另一个时钟信号之前等待预定的时间段。

公开(公告)号：US20090067157A1

公开(公告)日：2009-03-12

申请号：US11658522

申请日：2005-07-22

Applicant: Terence Alfred Cooper ,  Adnan Malik ,  Yu Huang

Inventor： Terence Alfred Cooper ,  Adnan Malik ,  Yu Huang

IPC: G02F1/13357 ,  G02B1/00 ,  G02B5/02

CPC classification number: G02F1/133504

Abstract: The present disclosure provides optical devices having an asymmetric viewing area imparting improved optical properties to the device.

Abstract translation: 本公开提供具有赋予设备改进的光学性质的不对称观看区域的光学装置。

公开(公告)号：US20070297051A1

公开(公告)日：2007-12-27

申请号：US11810489

申请日：2007-06-06

Applicant: Yu Huang ,  Adnan Malik

Inventor： Yu Huang ,  Adnan Malik

IPC: G03B21/60 ,  G02B3/08

CPC classification number: G03B21/10 ,  G03B21/625

Abstract: Off-axis total internal reflection Fresnel lenses and projection screens are disclosed that, when combined, enable construction of projection assemblies for rear-projection-type screen devices (e.g., projection television systems) that are thinner, provide easier handling and maintenance, and have improved contrast, focusing, and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets, the top side of which may be aspherical. Embodiments of the invention also include projection screens having at least one diffuser and one lenticular lens. In addition, one or more opaque layers may be used to improve contrast. The various components, e.g., the fresnel lens, the diffuser, the lenticular lens(es), the opaque layer(s), etc. are all combined, or connected, in such a way as to eliminate substantially all air gaps within the connections.

Abstract translation: 离轴全内反射菲涅尔透镜和投影屏幕被公开，当组合时，能够构造更薄的后投影式屏幕装置（例如，投影电视系统）的投影组件，从而提供更容易的处理和维护，并具有 与传统的投影屏幕设备相比，改善了对比度，对焦和分辨率。 离轴菲涅尔透镜包括多个同心的，向外延伸的全内反射型棱镜面，其顶侧可以是非球面。 本发明的实施例还包括具有至少一个漫射器和一个双凸透镜的投影屏幕。 此外，可以使用一个或多个不透明层来改善对比度。 各种组件，例如菲涅尔透镜，漫射器，双凸透镜，不透明层等都被组合或连接，以便基本上消除连接内的所有空气间隙 。

公开(公告)号：US20070254847A1

公开(公告)日：2007-11-01

申请号：US11576439

申请日：2005-09-29

Applicant: Zhongrong Liu ,  Wei Qi ,  Tiejun Fu ,  Wenjun Zou ,  Yuanqiao Ji ,  Bogang Li ,  Yu Huang

Inventor： Zhongrong Liu ,  Wei Qi ,  Tiejun Fu ,  Wenjun Zou ,  Yuanqiao Ji ,  Bogang Li ,  Yu Huang

IPC: A61K31/70 ,  A61P9/06 ,  A61P9/10

CPC classification number: A61K31/7048 ,  A61K2300/00

Abstract: The present invention provides a pharmaceutical composition containing steroidal saponins. The pharmaceutical composition comprises 5˜25 parts by weight of furostanal saponins represented by general formula A or general formula B and 1˜10 parts by weight of spirostanol saponin represented by general formula C. The present invention further provides a method for preparing the pharmaceutical composition. After determination of the three steroidal saponin components in the pharmaceutical composition of the present invention, it is proved that it has high stability and liability in its therapeutic effect. Meanwhile, the method to identify the three steroidal saponins is provided with reliable controllability. Besides, with its daily dosage of 300˜600 mg, which is less dosage, the drug of this invention provides a new choice in clinics.

Abstract translation: 本发明提供含有甾体皂苷的药物组合物。 所述药物组合物包含5〜25重量份的由通式A或通式B表示的呋喃磺酸皂苷和1〜10重量份的由通式C表示的螺甾烷醇皂苷。本发明还提供了制备药物组合物的方法 。 本发明的药物组合物中的三种类固醇皂苷成分测定后，证明其治疗效果高，稳定性高。 同时，鉴定三种甾体皂苷的方法具有可靠的可控性。 另外，日剂量为300〜600mg，用量较少，本发明药物在诊所中提供了新的选择。

公开(公告)号：US07239978B2

公开(公告)日：2007-07-03

申请号：US10925230

申请日：2004-08-23

Applicant: Wu-Tung Cheng ,  Kun-Han Tsai ,  Yu Huang ,  Nagesh Tamarapalli ,  Janusz Rajski

Inventor： Wu-Tung Cheng ,  Kun-Han Tsai ,  Yu Huang ,  Nagesh Tamarapalli ,  Janusz Rajski

IPC: G06F11/30 ,  G01R31/28

CPC classification number: G01R31/318547 ,  G06F11/267

Abstract: Methods, apparatus, and systems for performing fault diagnosis are disclosed herein. In certain disclosed embodiments, methods for diagnosing faults from compressed test responses are provided. For example, in one exemplary embodiment, a circuit description of an at least partially scan-based circuit-under-test and a compactor for compacting test responses captured in the circuit-under-test is received. A transformation function performed by the compactor to the test responses captured in the circuit-under-test is determined. A diagnostic procedure for evaluating uncompressed test responses is modified into a modified diagnostic procedure that incorporates the transformation function therein. Computer-readable media comprising computer-executable instructions for causing a computer to perform any of the disclosed methods are also provided. Likewise, computer-readable media comprising lists of fault candidates identified by any of the disclosed methods or circuit descriptions created or modified by the disclosed methods are provided.

Abstract translation: 本文公开了用于执行故障诊断的方法，装置和系统。 在某些公开的实施例中，提供了用于从压缩测试响应诊断故障的方法。 例如，在一个示例性实施例中，接收至少部分基于扫描的测试电路和压实器的电路描述，用于压缩在待测电路中捕获的测试响应。 确定由压实机对被测电路中捕获的测试响应执行的变换功能。 用于评估未压缩测试响应的诊断程序被修改为并入其中的变换功能的修改的诊断过程。 还提供了包括用于使计算机执行任何所公开的方法的计算机可执行指令的计算机可读介质。 同样地，提供了包括通过由所公开的方法创建或修改的任何公开的方法或电路描述所识别的故障候选列表的计算机可读介质。

公开(公告)号：US07230758B2

公开(公告)日：2007-06-12

申请号：US11171070

申请日：2005-06-30

Applicant: Yu Huang

Inventor： Yu Huang

IPC: G03B21/60 ,  G03B21/56

CPC classification number: G03B21/10 ,  G03B21/625

Abstract: An off-axis Fresnel lens is disclosed that, when combined with a rear projection screen (comprising, e.g., a lenticular lens, a diffuser, or both), enables construction of rear-projection-type screen devices (e.g., projection television systems) that are thinner and have improved contrast and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets. Each facet, in turn, comprises top and bottom sides, one or both of which may be flat or outwardly convex. Embodiments of the invention may also include concentric opaque sections that are disposed between successive prisms, between the prism base and the output surface of the Fresnel lens, and/or between the output surface of the Fresnel lens and the input surface of the projection screen in order to improve contrast. Contrast may also be enhanced by laminating the Fresnel lens to the projection screen.

Abstract translation: 公开了一种离轴菲涅尔透镜，当与后投影屏幕（包括例如双凸透镜，扩散器或两者）组合时，可以构建背投型屏幕装置（例如，投影电视系统） 与传统的投影屏幕装置相比，其更薄并且具有改善的对比度和分辨率。 离轴菲涅耳透镜包括多个同心的，向外延伸的全内反射型棱镜面。 每个小面又包括顶侧和底侧，其中一个或两个可以是平的或向外凸的。 本发明的实施例还可以包括设置在连续棱镜之间，棱镜基座和菲涅尔透镜的输出表面之间和/或菲涅尔透镜的输出表面与投影屏幕的输入表面之间的同心不透明部分 为了改善对比度。 对比度也可以通过将菲涅尔透镜层压到投影屏幕来增强。

公开(公告)号：US20070077017A1

公开(公告)日：2007-04-05

申请号：US11241003

申请日：2005-09-30

Applicant: Vinod Menon ,  Milind Gokhale ,  Stephen Forrest ,  Yu Huang ,  Fengnian Xia

Inventor： Vinod Menon ,  Milind Gokhale ,  Stephen Forrest ,  Yu Huang ,  Fengnian Xia

IPC: G02B6/10 ,  G02B6/26 ,  H01S3/00 ,  H01S3/30 ,  G02B6/42

CPC classification number: H01S5/1082 ,  B82Y20/00 ,  G02B6/1228 ,  H01S5/065 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/162 ,  H01S5/3213 ,  H01S5/34306

Abstract: An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixed area formed therein comprising a plurality of quantum wells intermixed with a plurality of barriers. The quantum wells and barriers may be intermixed using plasma-enhanced intermixing such as, for example, Argon plasma enhanced intermixing. Quantum-well intermixing reduces absorption loss normally encountered in the movement of light between waveguides.

Abstract translation: 公开了在有源波导的锥形区域中具有量子阱混合的不对称双波导（ATG）结构。 该结构包括第一波导，第二波导和形成在第二波导中的锥形。 该锥形件具有形成在其中的混合区域，其包括与多个屏障混合的多个量子阱。 量子阱和屏障可以使用等离子体增强混合（例如，氩等离子体增强混合）混合。 量子阱混合减少了在波导之间光的移动中通常遇到的吸收损耗。

公开(公告)号：US20070032052A1

公开(公告)日：2007-02-08

申请号：US11543746

申请日：2006-10-04

Applicant: Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L21/00

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.