公开(公告)号：US5595525A

公开(公告)日：1997-01-21

申请号：US541426

申请日：1995-10-10

申请人： Yutaka Hayashi ,  Makoto Nonoyama

发明人： Yutaka Hayashi ,  Makoto Nonoyama

IPC分类号： B23Q15/00 ,  B24B47/20 ,  B24B49/04 ,  B24B51/00 ,  G05B19/409 ,  B24B49/00

CPC分类号： B24B51/00 ,  B24B49/04 ,  G05B19/409 ,  G05B2219/36064 ,  G05B2219/36065 ,  G05B2219/36066 ,  G05B2219/36077 ,  G05B2219/36088 ,  G05B2219/36196 ,  G05B2219/36223 ,  G05B2219/43158

摘要： A numerically controlled grinding machine of the present invention grinds a cylindrical surface of a workpiece by a relative movement between the workpiece and a grinding wheel. The grinding conditions such as a grinding method and a finishing diameter of the workpiece are inputted so that data necessary for grinding the Workpiece are automatically determined in dependence upon the grinding conditions. The automatically determined grinding data are displayed on a display means. The grinding data displayed on the display means are modified by one of the four rules of arithmetic. The modification are carried out in accordance with a compensation rate set by override switch and the like or a compensation value inputted by a key operation.

摘要翻译： 本发明的数控磨床通过工件和砂轮之间的相对移动来研磨工件的圆柱形表面。 输入研磨条件，例如研磨方法和工件的精加工直径，使得根据研磨条件自动确定研磨工件所需的数据。 自动确定的磨削数据显示在显示装置上。 显示在显示装置上的磨削数据由四个算术规则中的一个修改。 根据由超控开关等设定的补偿率或通过键操作输入的补偿值进行修改。

公开(公告)号：US5581106A

公开(公告)日：1996-12-03

申请号：US541180

申请日：1995-10-11

申请人： Yutaka Hayashi ,  Takeshi Matsushita

发明人： Yutaka Hayashi ,  Takeshi Matsushita

IPC分类号： G11C11/405 ,  G11C11/404 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/108 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/108 ,  G11C11/404

摘要： A semiconductor memory cell, or a semiconductor memory cell for ASICs, of the structure is provided which ensures stable transistor operation, which does not require a large-capacitance capacitor as required in conventional DRAMs, which ensures reliable reading and writing of information, that permits short-channel design, and that allows the cell area to be reduced. The semiconductor memory cell includes: an information storage transistor TR.sub.1 comprising a semiconductor channel layer Ch.sub.1, first and second conductive gates G.sub.1, G.sub.2, and first and second conductive layers L.sub.1, L.sub.2 ; and a switching transistor TR.sub.2 comprising a semiconductor channel forming region Ch.sub.2, a third conductive gate G.sub.3, and third and fourth conductive layers L.sub.3, L.sub.4, wherein the fourth conductive layer L.sub.4 is connected to the second conductive gate G.sub.2, the first conductive gate G.sub.1 and the third conductive gate G.sub.3 are connected to a first memory-cell-selection line, the first conductive layer L.sub.1 and the third conductive layer L.sub.3 are connected to a second memory-cell-selection line, the second conductive layer L.sub.2 is connected to a fixed potential, and the semiconductor channel forming region Ch.sub.2 is connected to a read/write selection line.

公开(公告)号：US5271187A

公开(公告)日：1993-12-21

申请号：US766214

申请日：1991-09-27

申请人： Takao Yoneda ,  Yasuji Sakakibara ,  Moriaki Sakakura ,  Naoki Arimoto ,  Mamoru Katsuta ,  Yutaka Hayashi ,  Masashi Yamanaka

发明人： Takao Yoneda ,  Yasuji Sakakibara ,  Moriaki Sakakura ,  Naoki Arimoto ,  Mamoru Katsuta ,  Yutaka Hayashi ,  Masashi Yamanaka

IPC分类号： B24B51/00 ,  B24B53/00 ,  G05B19/404 ,  G05B19/4065

CPC分类号： B24B51/00 ,  B24B53/00 ,  G05B19/404 ,  G05B19/4065 ,  G05B2219/45159 ,  G05B2219/49391 ,  G05B2219/50308

摘要： An apparatus capable of automatically determining grinding wheel dressing timing for dressing a grinding wheel. The apparatus estimates the abrasion of the grinding wheel in a grinding cycle on the basis of machining data and grinding conditions, and divides the grinding cycle into a plurality of stages according to the estimated abrasion to carry out grinding wheel dressing after the completion of every stage of the grinding cycle. In grinding a workpiece having a plurality of ground sections, the abrasion of the grinding wheel in grinding each ground section is estimated, and the abrasion is accumulated in accordance with grinding sequence. A ground section after grinding which grinding wheel dressing is to be carried out is determined on the basis of the cumulative abrasion. Similarly, the abrasions are accumulated for each of workpieces. A grinding wheel dressing is carried out after the completion of grinding a workpiece so that the cumulative abrasion may not exceed a predetermined value.

公开(公告)号：US5235542A

公开(公告)日：1993-08-10

申请号：US776642

申请日：1991-10-15

申请人： Yutaka Hayashi ,  Iwao Hamaguchi ,  Shunsuke Fujita

发明人： Yutaka Hayashi ,  Iwao Hamaguchi ,  Shunsuke Fujita

IPC分类号： H01L27/146

CPC分类号： H01L27/14643

摘要： An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.

摘要翻译： 用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。 每一维转换阵列具有一体形成的第一和第二光电转换结构。 第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。 第二光电转换结构具有光电转换元件，每个光电转换元件具有投射有扫描光的扫掠光接收表面。 扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。 当扫描光投射到设置在第二光电转换结构中的光电转换元件上时，从设置在第一光电转换结构中的光电转换元件读出电信息信号。

公开(公告)号：US5232868A

公开(公告)日：1993-08-03

申请号：US742101

申请日：1991-08-05

申请人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

发明人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

IPC分类号： H01L21/205 ,  H01L31/20

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/051 ,  Y10S148/109

摘要： A method for forming a thin semiconductor film comprises the steps of supplying on a surface of a heated substrate a first material gas composed of germanium halide or germanium hydro-fluoride obtained by partially substituting fluorine of the germanium fluoride together with a second material gas composed of silicon hydride or silicon fluoro-hydride obtained by partially substituting hydrogen of the silicon hydride with fluorine and causing a chemical reaction between the first and second material gases, thereby growing a thin film containing germanium over the surface of the substrate. By controlling the substrate temperature or flow rate ratio of the first material gas to the second material gas, an optical gap of the thin film grown can be controlled.

摘要翻译： 一种形成薄半导体膜的方法包括以下步骤：在被加热衬底的表面上提供由锗卤化物或氟化锗制成的第一材料气体，所述第一材料气体通过部分地将氟化锗氟化物与由 氢化硅或氟化氢氢化物，其通过用氟部分地氢化硅氢化物并且引起第一和第二材料气体之间的化学反应而获得，从而在衬底的表面上生长含有锗的薄膜。 通过控制第一原料气体与第二原料气体的基板温度或流速比，可以控制生长的薄膜的光学间隙。

公开(公告)号：US5047090A

公开(公告)日：1991-09-10

申请号：US480203

申请日：1990-02-14

申请人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Jun Sakai ,  Keizi Kakite

发明人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Jun Sakai ,  Keizi Kakite

IPC分类号： H01L31/10 ,  H01L27/144 ,  H01L31/075 ,  H01L31/101

CPC分类号： H01L31/076 ,  H01L27/1443 ,  H01L31/101 ,  Y02E10/548 ,  Y10S136/291 ,  Y10S136/293

摘要： A semiconductor device includes laminated photoelectric conversion elements each having a semiconductor thin film carrying out the photoelectric conversion, the respective semiconductor thin film having a relationship L.ltoreq.1/.alpha.(.lambda.) when incident light is of a wavelength .lambda., the semiconductor thin film is of an absorbtion coefficient .alpha.(.lambda.) with respect to the light of the wavelength .lambda. and the carrier collecting length is L, whereby the optimum combination of the incident light wavelength and the sensitivity of the device can be obtained to realize a high photoelectric conversion efficiency.

摘要翻译： 半导体器件包括各自具有执行光电转换的半导体薄膜的层叠光电转换元件，当入射光为波长λ时，相应的半导体薄膜具有L 1 /α（λ）的关系，半导体薄膜 膜相对于波长λ的光具有吸收系数α（λ），载流子收集长度为L，由此可以获得入射光波长与器件灵敏度的最佳组合，以实现高光电 转换效率。

公开(公告)号：US4994879A

公开(公告)日：1991-02-19

申请号：US434253

申请日：1989-11-13

申请人： Yutaka Hayashi

发明人： Yutaka Hayashi

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/02161 ,  H01L31/02167 ,  H01L31/0236 ,  H01L31/056 ,  Y02E10/52

摘要： A photoelectric transducer includes a planar transduction element portion which has a thickness and an upper and lower surface and in which incident light produces the photoelectric conversion. An optically transparent textured layer is formed on an optically transparent protective layer and provided on at least one of the surfaces of the planar transduction element portion.

摘要翻译： 光电转换器包括具有厚度和上下表面的入射光产生光电转换的平面转导元件部分。 光学透明的纹理层形成在光学透明的保护层上并且设置在平面转导元件部分的至少一个表面上。

公开(公告)号：US4975750A

公开(公告)日：1990-12-04

申请号：US60866

申请日：1987-06-12

申请人： Yutaka Hayashi ,  Eiichi Suzuki

发明人： Yutaka Hayashi ,  Eiichi Suzuki

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L27/15 ,  H01L29/08 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/80 ,  H01L29/88 ,  H01L31/00 ,  H01L31/10 ,  H01L31/113 ,  H01L33/04 ,  H01L33/30 ,  H01L33/44

CPC分类号： H01L29/802 ,  H01L27/14681 ,  H01L29/0843 ,  H01L29/7311 ,  H01L29/737 ,  H01L29/88 ,  H01L31/113 ,  H01L33/0037

摘要： A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region and having a barrier relative to the semiconductor region. The so-formed device exhibits various effects such as amplification, negative resistance, switching, voltage or current generation, photo-electric conversion, and light-emission either upon irradiation with light or upon application of a power source thereon.

摘要翻译： 一种具有夹层结构的半导体器件，其通过使半导体区域和相对区域彼此面对而形成，该薄膜由具有比半导体区域更宽的禁带宽度的物质制成的薄膜，并且相对于 半导体区域。 如此形成的装置在照射光时或在其上施加电源时表现出诸如放大，负电阻，开关，电压或电流产生，光电转换和发光的各种效果。

公开(公告)号：US4943943A

公开(公告)日：1990-07-24

申请号：US633863

申请日：1984-07-24

申请人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Kojiro Tanaka

发明人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Kojiro Tanaka

IPC分类号： H01L27/112 ,  G11C16/04 ,  G11C16/26 ,  G11C17/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L29/788 ,  H01L29/792 ,  H03K19/0944

CPC分类号： G11C16/0425 ,  G11C16/26 ,  G11C17/00

摘要： The present invention provides a read-out circuit for a nonvolatile memory which is capable of extracting a widely-fluctuating output voltage, even when the threshold value of the nonvolatile memory changes only a little.

摘要翻译： 本发明提供了一种非易失性存储器的读出电路，即使在非易失性存储器的阈值变化很小时也能够提取广泛波动的输出电压。

公开(公告)号：US09190145B2

公开(公告)日：2015-11-17

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。