公开(公告)号：US20130285056A1

公开(公告)日：2013-10-31

申请号：US13869124

申请日：2013-04-24

Applicant: STMICROELECTRONICS S.R.I.

Inventor： Alberto PAGANI ,  Federico Giovanni ZIGLIOLI

IPC: H01L21/02 ,  H01L23/544

CPC classification number: H01L21/02 ,  H01L22/14 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/94 ,  H01L24/98 ,  H01L25/0657 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/02185 ,  H01L2224/022 ,  H01L2224/02215 ,  H01L2224/037 ,  H01L2224/03849 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05006 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05169 ,  H01L2224/05601 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05644 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16147 ,  H01L2224/45099 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81375 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/85375 ,  H01L2224/85805 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/05442 ,  H01L2224/81 ,  H01L2924/01073 ,  H01L2924/00 ,  H01L2224/81805

Abstract: A semiconductor structure includes at least a semiconductor body, a delimiting structure delimiting a cup-shaped recess in the body and a conductive region in the recess. The conductive region is made of a low-melting-temperature material, having a melting temperature lower than that of the materials forming the delimiting structure.

Abstract translation: 半导体结构至少包括半导体本体，限定本体中的杯形凹部的限定结构和凹部中的导电区域。 导电区域由低熔点材料制成，其熔点低于形成限定结构的材料的熔融温度。

公开(公告)号：US20130256661A1

公开(公告)日：2013-10-03

申请号：US13855321

申请日：2013-04-02

Applicant: STMICROELECTRONICS S.R.I.

Inventor： Alberto PAGANI

IPC: H01L21/66 ,  H01L21/768

CPC classification number: H01L22/34 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14

Abstract: An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current.

Abstract translation: 用于制造用于沿垂直方向延伸穿过半导体材料的基底的通孔的电测试的系统的实施例设想将身体中的电测试电路集成以使得能够检测穿通通孔的至少一个电参数 微电子掩埋结构，其限定朝向外部的电连接元件和通孔的埋入端之间的电路径; 集成步骤设想提供沟槽并在沟槽的底部形成掺杂的掩埋区域，其具有与衬底的掺杂相反的掺杂，以便形成半导体结，当正向偏置时限定电路径; 特别地，半导体结具有比横向于垂直方向的水平面中的导电区域的表面的面积小的结面积，使得具有减小的反向饱和电流。

公开(公告)号：US20130239686A1

公开(公告)日：2013-09-19

申请号：US13888170

申请日：2013-05-06

Applicant: STMICROELECTRONICS S.R.I.

Inventor： Gabriele Cazzaniga ,  Luca Coronato ,  Barbara Simoni

IPC: G01P15/125 ,  G01P15/02

CPC classification number: G01P15/125 ,  G01C19/5712 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/02 ,  G01P2015/0831

Abstract: A MEMS detection structure is provided with: a substrate having a top surface, on which a first fixed-electrode arrangement is set; a sensing mass, extending in a plane and suspended above the substrate and above the first fixed-electrode arrangement at a separation distance; and connection elastic elements that support the sensing mass so that it is free to rotate out of the plane about an axis of rotation, modifying the separation distance, as a function of a quantity to be detected along an axis orthogonal to the plane. The MEMS detection structure also includes: a coupling mass, suspended above the substrate and connected to the sensing mass via the connection elastic elements; and an anchoring arrangement, which anchors the coupling mass to the substrate with a first point of constraint, set at a distance from the axis of rotation and in a position corresponding to the first fixed-electrode arrangement.

Abstract translation: MEMS检测结构设置有：具有顶表面的基板，其上设置有第一固定电极布置; 感测质量块，在平面内延伸并悬挂在衬底上方，并以分隔距离悬挂在第一固定电极装置上方; 以及连接弹性元件，其支撑感测质量，使得其可以围绕旋转轴线自由地旋转离开平面，根据沿着与该平面垂直的轴线被检测的量来修改分离距离。 MEMS检测结构还包括：耦合质量块，悬挂在衬底上并通过连接弹性元件连接到感测质量块; 以及锚定装置，其将耦合质量块固定到具有第一限制点的衬底上，该第一约束点设置在距旋转轴线一定距离处，并且位于对应于第一固定电极装置的位置。

公开(公告)号：US20130224083A1

公开(公告)日：2013-08-29

申请号：US13858558

申请日：2013-04-08

Applicant: STMicroelectronics S.r.I.

Inventor： Sabrina Conoci ,  Salvatore Petralia ,  Salvatore Sortino

IPC: C07C211/52 ,  C07C323/29

CPC classification number: C07C211/52 ,  A61K31/04 ,  A61K33/00 ,  B01J19/123 ,  B01J2219/089 ,  C01B21/24 ,  C07C323/29 ,  A61K2300/00

Abstract: The present invention relates to the use of a nitroaniline derivative of Formula I for the production of nitric oxide and for the preparation of a medicament for the treatment of a disease wherein the administration of nitric oxide is beneficial. The present invention furthermore relates to a method for the production of NO irradiating a nitroaniline derivative of Formula I, a kit comprising a nitroaniline derivative of Formula I and a carrier and to a system comprising a source of radiations and a container associated to a nitroaniline derivative of Formula I. In Formula I, R and RI are each independently hydrogen or a C1-C3 alkyl group; RII is hydrogen or an alkyl group.

Abstract translation: 本发明涉及式I的硝基苯胺衍生物在制备一氧化氮中的用途以及用于制备治疗其中一氧化氮的给药有益的药物的用途。 本发明还涉及一种用于制备辐射式I的硝基苯胺衍生物的NO的方法，该试剂盒包含式I的硝基苯胺衍生物和载体，以及包含辐射源和与硝基苯胺衍生物相关的容器的体系 在式I中，R 1和R 2各自独立地为氢或C 1 -C 3烷基; RII是氢或烷基。

公开(公告)号：US20130075885A1

公开(公告)日：2013-03-28

申请号：US13615185

申请日：2012-09-13

Applicant: HuiJun Xiong ,  Pierangelo Magni

Inventor： HuiJun Xiong ,  Pierangelo Magni

IPC: H01L23/495 ,  H01L21/98

CPC classification number: H01L24/97 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a lead frame and a packaging method. The lead frame comprises a first plurality of die pads, a second plurality of leads extending from the first plurality of die pads, and a third plurality of tie elements, each of which connects one of the first plurality of die pads to another.

Abstract translation: 提供引线框和封装方法。 引线框架包括第一多个管芯焊盘，从第一多个管芯焊盘延伸的第二多个引线，以及第三多个连接元件，每个连接元件将第一多个管芯焊盘中的一个连接到另一个引线框架。

公开(公告)号：US20130058378A1

公开(公告)日：2013-03-07

申请号：US13601464

申请日：2012-08-31

Applicant: Osvaldo Enrico Zambetti ,  Dario Zambotti

Inventor： Osvaldo Enrico Zambetti ,  Dario Zambotti

IPC: G01K7/22

CPC classification number: G01K7/24 ,  G01K7/00 ,  G01K7/16 ,  G01K7/22 ,  G01K7/25

Abstract: A sensing device includes a first current mirror configured to mirror a current flowing through a thermistor, a second current mirror configured to mirror a current flowing through a reference resistor a comparator configured to compare voltages on the thermistor and the resistor, and a counter configured to generate a control signal representative of a temperature difference based on the comparison. The control signal controls a mirroring ratio of the second current mirror. The sensing device may be employed to generate a droop current of a voltage regulator.

Abstract translation: 感测装置包括配置成镜像流过热敏电阻的电流的第一电流镜，被配置为镜像流过参考电阻器的电流的第二电流镜，配置成比较热敏电阻和电阻器上的电压的比较器和配置成 基于该比较生成表示温度差的控制信号。 控制信号控制第二电流镜的镜像比。 感测装置可用于产生电压调节器的下降电流。

公开(公告)号：US20130057323A1

公开(公告)日：2013-03-07

申请号：US13666853

申请日：2012-11-01

Applicant: STMicroelectronics S.r.I.

Inventor： Claudio Spini ,  Claudio Adragna

IPC: H03K5/1534

CPC classification number: H02M3/33507 ,  H02M3/33515 ,  H02M3/33553

Abstract: An integrated control circuit of a switch is described, which is adapted to open or close a current path; said integrated circuit includes a comparator to compare a first signal with a second signal representative of the current flowing through said current path. The comparator outputs a third variable signal between a low logic level and a high logic level according to whether said second signal is lower than said first signal or vice versa; the integrated circuit has a driver to generate a signal to drive said switch in response to the third signal, and is configured to detect a spike on the leading edge of said second signal and to blank said third signal for a first blanking time period which depends on a turn-on delay of said switch and a second blanking period which depends on the duration of said spike on the leading edge of said second signal.

Abstract translation: 描述了开关的集成控制电路，其适于打开或关闭电流路径; 所述集成电路包括比较器，用于将第一信号与表示流过所述电流路径的电流的第二信号进行比较。 所述比较器根据所述第二信号是否低于所述第一信号而输出低逻辑电平和高逻辑电平之间的第三可变信号，反之亦然; 所述集成电路具有驱动器，以产生响应于所述第三信号来驱动所述开关的信号，并且被配置为检测所述第二信号的前沿上的尖峰，并且将所述第三信号置为空白，所述第一消隐时间段取决于 在所述开关的导通延迟上，以及取决于所述第二信号的前沿上的所述尖峰的持续时间的第二消隐周期。

公开(公告)号：US20130032197A1

公开(公告)日：2013-02-07

申请号：US13556469

申请日：2012-07-24

Applicant: MARINA FOTI ,  NOEMI GRAZIANA SPARTA ,  SALVATORE LOMBARDO ,  SILVESTRA DIMARCO ,  SEBASTIANO RAVESI ,  COSIMO GERARDI

Inventor： MARINA FOTI ,  NOEMI GRAZIANA SPARTA ,  SALVATORE LOMBARDO ,  SILVESTRA DIMARCO ,  SEBASTIANO RAVESI ,  COSIMO GERARDI

IPC: H01L31/05 ,  H01L31/18

CPC classification number: H01L31/0465 ,  H01L31/022491 ,  H01L31/0312 ,  H01L31/03762 ,  H01L31/03926 ,  H01L31/0463 ,  H01L31/068 ,  H01L31/075 ,  Y02E10/50

Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

Abstract translation: 太阳能薄膜模块设置有隔离沟槽和接触沟槽的减小的横向尺寸，其提供单个太阳能电池的串联连接。 为此，应用光刻和蚀刻技术以对单个材料层进行图案化，从而与传统的激光划线技术相比减少了寄生分流泄漏。 特别地，可能存在在柔性基板材料上形成的串联连接的太阳能电池，其在室内应用中是高效的。

公开(公告)号：US20120284533A1

公开(公告)日：2012-11-08

申请号：US13461473

申请日：2012-05-01

Applicant: Gilles Van Assche ,  Joan Daemen ,  Guido Bertoni

Inventor： Gilles Van Assche ,  Joan Daemen ,  Guido Bertoni

IPC: G06F21/00

CPC classification number: H04L9/002 ,  H04L9/004 ,  H04L9/06 ,  H04L2209/12

Abstract: A method of performing a cryptographic operation including: receiving a plurality of binary input values; splitting the binary input values into a plurality of non-binary digits of base r, where r is an integer greater than 2 and not equal to a power of 2; and performing, by a cryptographic block on each of the plurality of non-binary digits, a different modulo r operation to generate at least one output digit) of base r.

Abstract translation: 一种执行密码操作的方法，包括：接收多个二进制输入值; 将二进制输入值分解成基本r的多个非二进制数字，其中r是大于2且不等于2的幂的整数; 并且通过所述多个非二进制数字中的每一个上的密码块执行不同的模r操作以生成基本r的至少一个输出数字）。

公开(公告)号：US20120256605A1

公开(公告)日：2012-10-11

申请号：US13438991

申请日：2012-04-04

Applicant: Sergio Lecce ,  Maurizio Rossi

Inventor： Sergio Lecce ,  Maurizio Rossi

IPC: G05F1/10

CPC classification number: G05F3/30

Abstract: A generator of a voltage logarithmically variable with temperature may include a differential amplifier having a pair of transistors, each coupled with a respective bias network adapted to bias in a conduction state the transistors first and second respectively with a constant current and with a current proportional to the working absolute temperature. The pair of transistors may generate between their control nodes the voltage logarithmically variable with temperature. The differential amplifier may have a common bias current generator coupled between the common terminal of the differential pair of transistors and a node at a reference potential, and a feedback line to provide a path for the current difference between the sum of currents flowing through the transistors of the differential pair and the common bias current.

Abstract translation: 具有对数可变温度的电压的发生器可以包括具有一对晶体管的差分放大器，每个晶体管分别与相应的偏置网络耦合，该偏置网络适于以恒定电流分别以第一和第二晶体管以导通状态偏置晶体管，并且电流与 工作绝对温度。 该对晶体管可以在其控制节点之间产生对数可变温度的电压。 差分放大器可以具有共同的偏置电流发生器，耦合在差分晶体管对的公共端和参考电位的节点之间，以及反馈线，以提供流过晶体管的电流之和之间的电流差的路径 的差分对和公共偏置电流。