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    MEMS ANTI-PHASE VIBRATORY GYROSCOPE
    21.
    发明申请
    MEMS ANTI-PHASE VIBRATORY GYROSCOPE 有权
    MEMS抗相振动陀螺仪

    公开(公告)号：US20160238390A1

    公开(公告)日：2016-08-18

    申请号：US14270596

    申请日：2014-05-06

    Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

    Inventor： Lian Zhong Yu ,  Chen Sun

    IPC: G01C19/5747 ,  G01C19/5769

    CPC classification number: G01C19/5769 ,  B81B3/0048 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2203/0118 ,  G01C19/574 ,  G01C19/5747

    Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

    Abstract translation: MEMS反相振动陀螺仪包括两个测量质量，其具有顶盖和底盖，每个与相应的测量质量耦合。 测量质量在垂直方向上相互耦合。 每个测量质量包括外框架，位于外框架内的内框架和位于内框架内的质量。 两个测量质量通过外框架相互耦合。 内框架通过多个第一弹性梁与外框架联接。 质量通过多个第二弹性梁与内框架联接。 梳齿联接结构沿着外框架和内框架的相对侧设置。 两个质量体向相反方向振动，梳齿联结结构测量旋转角速度。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    22.
    发明申请
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 有权
    在电介质和有机材料之间实现良好粘合的方法

    公开(公告)号：US20160221823A1

    公开(公告)日：2016-08-04

    申请号：US15024942

    申请日：2014-09-15

    Applicant: CAVENDISH KINETICS, INC

    Inventor： Mickael RENAULT

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same
    25.
    发明授权
    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same 有权
    微机电装置包括一个封装层，一个部分被去除以暴露一个基本上平坦的表面，该表面具有设置在室外的部分并且包括形成有集成电路的场区域和用于制造其的方法

    公开(公告)号：US07859067B2

    公开(公告)日：2010-12-28

    申请号：US11901826

    申请日：2007-09-18

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L21/00

    CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

    NON-VOLATILE MEMORY DEVICE
    26.
    发明申请
    NON-VOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件

    公开(公告)号：US20100038731A1

    公开(公告)日：2010-02-18

    申请号：US12441254

    申请日：2006-11-02

    Applicant: Robertus P. Van Kampen ,  Robert Kazinczi

    Inventor： Robertus P. Van Kampen ,  Robert Kazinczi

    IPC: H01L29/84 ,  H01L21/3205

    CPC classification number: H01H59/0009 ,  B81C1/0015 ,  B81C2201/014 ,  B81C2201/0176 ,  G11C23/00 ,  H01H51/12

    Abstract: A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever (101) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material (107) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity (102) in which the cantilever is suspended.

    Abstract translation: 一种非易失性存储器件和制造非易失性微机电存储单元的方法。 该方法包括通过使用原子层沉积在衬底上沉积第一层牺牲材料的第一步骤。该方法的第二步是在第一层牺牲材料的至少一部分上提供悬臂（101）。 第三步骤是通过使用原子层沉积在第一层牺牲材料上并在悬臂的一部分上沉积第二层牺牲材料，使得悬臂的一部分被牺牲材料包围。 第四步是提供覆盖牺牲材料的第二层的至少一部分的另外的层材料（107）。 最后，最后一步是蚀刻掉围绕悬臂的牺牲材料，由此限定悬臂悬挂在其中的空腔（102）。

    Integrated method for release and passivation of MEMS structures
    27.
    发明授权
    Integrated method for release and passivation of MEMS structures 失效
    MEMS结构的释放和钝化的集成方法

    公开(公告)号：US06902947B2

    公开(公告)日：2005-06-07

    申请号：US10435757

    申请日：2003-05-09

    Applicant: Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung ,  Claes H. Bjorkman

    Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung ,  Claes H. Bjorkman

    IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00

    CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

    Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

    Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

    NONSTICK LAYER FOR A MICROMECHANICAL COMPONENT
    29.
    发明申请
    NONSTICK LAYER FOR A MICROMECHANICAL COMPONENT 有权
    用于微机电组件的非磁性层

    公开(公告)号：US20030139040A1

    公开(公告)日：2003-07-24

    申请号：US09445374

    申请日：2000-03-02

    Inventor： MARTIN SCHOEFTHALER ,  PETER HEIN ,  HELMUT SKAPA ,  HORST MUENZEL

    IPC: B44C001/22 ,  C03C015/00 ,  C03C025/68 ,  H01L021/302 ,  H01L021/461

    CPC classification number: G01P15/0802 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  G01P1/023

    Abstract: The invention proposes a method for manufacturing micromechanical components, and a micromechanical component, in which a movable element (4) is produced on a sacrificial layer (2). In a subsequent step the sacrificial layer (2) beneath the movable element (4) is removed so that the movable element (4) becomes movable. After removal of the sacrificial layer (2), a protective layer (7) is deposited on a surface of the movable element (4). Silicon oxide and/or silicon nitride is used for the protective layer (7).

    Abstract translation: 本发明提出了一种用于制造微机械部件的方法，以及微机械部件，其中在牺牲层（2）上制造可移动元件（4）。 在随后的步骤中，去除可移动元件（4）下面的牺牲层（2），使得可移动元件（4）变得可移动。 在去除牺牲层（2）之后，在可移动元件（4）的表面上沉积保护层（7）。 氧化硅和/或氮化硅用于保护层（7）。

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