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公开(公告)号:US20180275159A1
公开(公告)日:2018-09-27
申请号:US15763212
申请日:2016-08-03
Applicant: Hitachi Automotive Systems, Ltd.
Inventor: Masatoshi KANAMARU , Daisuke MAEDA , Masahide HAYASHI , Masashi YURA , Akihiro OKAMOTO
IPC: G01P15/08 , G01P15/125 , B81B7/00
CPC classification number: G01P15/08 , B81B3/0051 , B81B7/0016 , B81B2201/0235 , B81B2203/0118 , B81B2203/04 , B81B2203/056 , B81B2207/012 , G01P15/125 , G01P2015/0862 , G01P2015/0882 , H01L29/84
Abstract: To provide a physical quantity sensor having excellent reliability by reducing the influence of a force applied from the outside. Disclosed is a physical quantity sensor, which has a weight or a movable electrode formed on a device substrate, and an outer peripheral section that is disposed to surround the weight or the movable electrode, said weight or movable electrode being displaceable in the rotation direction in a plane. When the weight or the movable electrode is displaced in the rotation direction in the plane, the physical quantity sensor is provided with a rotation space at the outer peripheral section of an end portion of the weight or the movable electrode, said end portion being in the direction viewed from the center position of the weight or the movable electrode.
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公开(公告)号:US09679857B2
公开(公告)日:2017-06-13
申请号:US15266809
申请日:2016-09-15
Applicant: Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
Inventor: Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
IPC: H01L23/52 , B81C1/00 , B81B7/02 , G01P15/06 , H01L23/00 , B81C99/00 , B81B7/00 , H01L21/768 , H01L23/522 , H01L23/525 , H01L23/528 , G01P15/08
CPC classification number: H01L23/564 , B81B7/0006 , B81B2201/0235 , B81B2203/0315 , B81B2207/015 , B81C1/00246 , B81C99/005 , B81C2201/013 , B81C2203/0136 , B81C2203/0714 , G01P15/06 , G01P15/0802 , G01P2015/0862 , G01P2015/0877 , H01L21/768 , H01L23/5226 , H01L23/5256 , H01L23/528
Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.
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公开(公告)号:US20170005045A1
公开(公告)日:2017-01-05
申请号:US15266809
申请日:2016-09-15
Applicant: Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
Inventor: Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
IPC: H01L23/00 , H01L23/528 , G01P15/06 , B81B7/00 , H01L23/525 , H01L21/768 , H01L23/522 , B81C1/00
CPC classification number: H01L23/564 , B81B7/0006 , B81B2201/0235 , B81B2203/0315 , B81B2207/015 , B81C1/00246 , B81C99/005 , B81C2201/013 , B81C2203/0136 , B81C2203/0714 , G01P15/06 , G01P15/0802 , G01P2015/0862 , G01P2015/0877 , H01L21/768 , H01L23/5226 , H01L23/5256 , H01L23/528
Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.
Abstract translation: 公开了一种半导体器件,其包括由电介质层分隔的图案化金属层的堆叠,所述堆叠包括第一导电支撑结构和第二导电支撑结构以及空腔,其中包括至少一个金属部分的惯性质量元件导电耦合到 所述第一支撑结构和所述第二支撑结构由相应的导电连接部分组成,所述导电连接部分中的至少一个设计成使所述惯性质量元件断裂,所述加速力超过由所述导电连接部分的尺寸限定的阈值 。 还公开了制造这种半导体器件的方法。
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公开(公告)号:US09194882B2
公开(公告)日:2015-11-24
申请号:US14447696
申请日:2014-07-31
Applicant: Robert Bosch GmbH
Inventor: Ando Feyh , Gary O'Brien
CPC classification number: G01P15/0802 , B81B3/0021 , B81B7/02 , B81B2201/025 , B81B2201/0264 , G01C19/5769 , G01C19/5783 , G01L1/14 , G01L1/18 , G01P1/023 , G01P15/125 , G01P15/14 , G01P15/18 , G01P2015/0862 , G01P2015/088
Abstract: In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
Abstract translation: 在一个实施例中,电容式压力传感器的工艺流程与惯性传感器的工艺流程相结合。 以这种方式,在压力传感器的膜层内实现惯性传感器。 器件层同时用作惯性传感器中的平面外感测的z轴电极,和/或用作惯性传感器的布线层。 压力传感器工艺流程的膜层(或盖层)用于定义惯性传感器感测结构。 膜层中的绝缘氮化物塞用于电耦合用于多轴惯性传感器的各种感测结构,允许完全差分感测。
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公开(公告)号:US20140260618A1
公开(公告)日:2014-09-18
申请号:US14190721
申请日:2014-02-26
Inventor: Ilker Ender Ocak , Chengliang Sun , Julius Ming-Lin Tsai , Sanchitha Nirodha Fernando
IPC: G01P15/125
CPC classification number: G01V1/18 , G01P15/125 , G01P15/131 , G01P2015/0837 , G01P2015/0862 , G01P2015/0882 , G01V1/09 , G01V1/38
Abstract: A microelectromechanical system (MEMS) accelerometer having separate sense and force-feedback electrodes is disclosed. The use of separate electrodes may in some embodiments increase the dynamic range of such devices. Other possible advantages include, for example, better sensitivity, better noise suppression, and better signal-to-noise ratio. In one embodiment, the accelerometer includes three silicon wafers, fabricated with sensing electrodes forming capacitors in a fully differential capacitive architecture, and with separate force feedback electrodes forming capacitors for force feedback. These electrodes may be isolated on a layer of silicon dioxide. In some embodiments, the accelerometer also includes silicon dioxide layers, piezoelectric structures, getter layers, bonding pads, bonding spacers, and force feedback electrodes, which may apply a restoring force to the proof mass region. MEMS accelerometers with force-feedback electrodes may be used in geophysical surveys, e.g., for seismic sensing or acoustic positioning.
Abstract translation: 公开了具有分离的感测和力反馈电极的微机电系统(MEMS)加速计。 在一些实施例中,单独电极的使用可以增加这种装置的动态范围。 其他可能的优点包括例如更好的灵敏度,更好的噪声抑制和更好的信噪比。 在一个实施例中,加速度计包括三个硅晶片,由感应电极制成,其形成全差分电容结构的电容器,并且具有单独的力反馈电极,形成用于力反馈的电容器。 这些电极可以分离在二氧化硅层上。 在一些实施例中,加速度计还包括二氧化硅层,压电结构,吸气剂层,接合垫,粘合间隔物和力反馈电极,其可以对检测质量区域施加恢复力。 具有力反馈电极的MEMS加速度计可用于地球物理勘测,例如用于地震检测或声学定位。
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公开(公告)号:US20140130595A1
公开(公告)日:2014-05-15
申请号:US13674506
申请日:2012-11-12
Applicant: MEMSIC, INC.
Inventor: Yang Zhao , Paul M. Zavracky , Yongyao Cai
IPC: G01D5/54
CPC classification number: G01D5/54 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0292 , B81B2207/015 , G01C19/5783 , G01P2015/0862
Abstract: A unitary sensor package having a magnetometer, accelerometer and gyroscope incorporated into a monolithic structure composed of one or more wafers or substrates. Pressure and/or other types of sensors can also be incorporated in the monolithic structure.
Abstract translation: 一体式传感器封装,其具有结合到由一个或多个晶片或衬底组成的整体结构中的磁力计,加速度计和陀螺仪。 压力和/或其他类型的传感器也可以并入整体结构中。
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公开(公告)号:US20110012211A1
公开(公告)日:2011-01-20
申请号:US12835768
申请日:2010-07-14
CPC classification number: H01L23/564 , B81B7/0006 , B81B2201/0235 , B81B2203/0315 , B81B2207/015 , B81C1/00246 , B81C99/005 , B81C2201/013 , B81C2203/0136 , B81C2203/0714 , G01P15/06 , G01P15/0802 , G01P2015/0862 , G01P2015/0877 , H01L21/768 , H01L23/5226 , H01L23/5256 , H01L23/528
Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers (12) separated by dielectric layers (14), said stack comprising a first conductive support structure (20) and a second conductive support structure (21) and a cavity (42) in which an inertial mass element (22) comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions (24), at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.
Abstract translation: 公开了一种半导体器件,其包括由电介质层(14)分离的图案化金属层(12)的堆叠,所述堆叠包括第一导电支撑结构(20)和第二导电支撑结构(21)和空腔(42) 其中包括至少一个金属部分的惯性质量元件(22)通过相应的导电连接部分(24)导电耦合到第一支撑结构和第二支撑结构,所述导电连接部分中的至少一个设计成在 惯性质量元件暴露于超过由导电连接部分的尺寸限定的阈值的加速力。 还公开了制造这种半导体器件的方法。
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公开(公告)号:US11993509B2
公开(公告)日:2024-05-28
申请号:US17179157
申请日:2021-02-18
Applicant: STMicroelectronics S.r.l.
Inventor: Gabriele Gattere , Francesco Rizzini
CPC classification number: B81B3/0018 , G01P15/001 , B81B2201/0235 , G01P2015/0862
Abstract: A MEMS inclinometer includes a substrate, a first mobile mass and a sensing unit. The sensing unit includes a second mobile mass, a number of elastic elements, which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis, and a number of elastic structures, each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis and to a second axis. The sensing unit further includes a fixed electrode that is fixed with respect to the substrate and a mobile electrode fixed with respect to the second mobile mass, which form a variable capacitor.
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公开(公告)号:US11858805B2
公开(公告)日:2024-01-02
申请号:US17447002
申请日:2021-09-07
Applicant: Robert Bosch GmbH
Inventor: Stefan Kiesel , Cristian Nagel , Sebastian Guenther
IPC: B81B3/00 , G01P15/08 , G01P15/18 , G01P15/125
CPC classification number: B81B3/0021 , G01P15/0802 , G01P15/125 , G01P15/18 , B81B2201/0235 , G01P2015/0862
Abstract: A micromechanical structure, including a substrate, a seismic mass movable with respect to the substrate, and first and second detectors. A first direction and a second direction perpendicular to the first direction define a main extension plane of the substrate. The first and second detectors respectively detect a translatory deflection, and a rotatory deflection. The seismic mass is connected to the substrate via an anchoring element and four torsion spring sections. The first detector include an electrode structure, including first electrodes attached at the seismic mass and second electrodes attached at the substrate. The first and second electrodes have a two-dimensional extension in the second direction and in a third direction perpendicular to the main extension plane. The anchoring element includes first and second sections with a gap between them. A connecting element connects two first electrodes and is guided through the gap.
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公开(公告)号:US20230305036A1
公开(公告)日:2023-09-28
申请号:US18189577
申请日:2023-03-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Altti TORKKELI , Matti LIUKKU , Petteri KILPINEN
IPC: G01P15/125 , G01P15/08
CPC classification number: G01P15/125 , G01P15/0802 , G01P2015/0862
Abstract: An accelerometer element is provided that includes a body, a mass and a spring system that couples the mass to the body. The spring system configures the mass to rotate reciprocally about a rotary axis. The mass includes a volume of a bulk material that forms two essentially closed surfaces and incorporates between those two closed surfaces one or more weight elements, each of which is formed of a substance whose weight per unit volume is different from weight per unit volume of the bulk material. The weight elements are incorporated in the mass so that the centre of gravity of the mass is offset from the rotary axis in an in-plane direction and the centre of gravity of the mass and the rotary axis are at the same level within the mass in the out-of-plane direction.
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