LIGHT SOURCE DEVICE AND METHOD OF MANUFACTURING SAME

    公开(公告)号:US20230327396A1

    公开(公告)日:2023-10-12

    申请号:US18189290

    申请日:2023-03-24

    发明人: Tadaaki MIYATA

    摘要: A light source device includes: a substrate having a support face; a lateral wall part disposed on the substrate and having an upper face and inner wall faces, the inner wall faces defining a space; a laser diode located in the space; a first submount having a mounting face bonded to an upper face of the laser diode, and an upper face located opposite the mounting face; a sealing member bonded to the upper face of the lateral wall part and the upper face of the first submount, thereby sealing the space; a heat dissipating block located above the first submount; and a heat conducting member located between the first submount and the heat dissipating block.

    LASER MODULE
    25.
    发明公开
    LASER MODULE 审中-公开

    公开(公告)号:US20230318255A1

    公开(公告)日:2023-10-05

    申请号:US18124658

    申请日:2023-03-22

    摘要: The laser module includes a QCL element and a support member. The QCL element has a first end surface located on a first side in a second direction orthogonal to a stacking direction and a second end surface located on a second side opposite to the first side in the second direction. The substrate has first to fourth substrate-surfaces. The support member has a first portion having a first surface facing at least a portion of the fourth substrate-surface, and a second portion having a second surface facing at least a portion of the first substrate-surface and a third surface located opposite to the second surface in the second direction. At least a part of the terahertz wave generated in the active layer is incident on the second surface of the support member through the substrate and is emitted from the third surface through the inside of the second portion.

    SEMICONDUCTOR LASER DEVICE
    26.
    发明公开

    公开(公告)号:US20230246412A1

    公开(公告)日:2023-08-03

    申请号:US18002647

    申请日:2020-10-01

    发明人: Nobuyuki OGAWA

    摘要: A semiconductor laser device includes a submount having a bottom plate part and a projecting part projecting from a surface of the bottom plate part, and a semiconductor laser bonded to the submount. The semiconductor laser includes a semiconductor substrate, a semiconductor structure part that is formed on the semiconductor substrate and has an active layer, a first electrode, and a second electrode. A side face of the semiconductor laser facing the projecting part, and the second electrode thereof are respectively bonded to the projecting part facing the semiconductor laser and the bottom plate part with a bonding member. The bonding member for bonding the projecting part and the side face of the semiconductor laser is such that an end part thereof in a z-direction in which the projecting part projects is located further away in the z-direction than a surface of the semiconductor substrate of the semiconductor laser.

    LASER DEVICE
    27.
    发明公开
    LASER DEVICE 审中-公开

    公开(公告)号:US20230198219A1

    公开(公告)日:2023-06-22

    申请号:US18107379

    申请日:2023-02-08

    摘要: A laser device includes a base plate, a plurality of light-emitting chips, a frame and a collimating lens group. The plurality of light-emitting chips are configured to emit laser beams. The laser beams emitted by the plurality of light-emitting chips each have a first axis and a second axis. The collimating lens group is disposed on a side of the frame away from the base plate, and includes a plurality of collimating lenses. The plurality of collimating lenses correspond to the plurality of light-emitting chips. The collimating lens is configured to reduce a divergence angle of the laser beam incident on the collimating lens, so as to make a reduction of the divergence angle of the laser beam passing through the collimating lens in the first axis less than a reduction of the divergence angle of the laser beam passing through the collimating lens in the second axis.

    METHOD FOR MANUFACTURING OPTOELECTRONIC COMPONENTS, AND OPTOELECTRONIC COMPONENTS

    公开(公告)号:US20240258764A1

    公开(公告)日:2024-08-01

    申请号:US18561240

    申请日:2022-05-23

    摘要: In an embodiment a method includes providing at least one semiconductor wafer, which has a semiconductor layer sequence and a plurality of single diode elements arranged next to and connected to one another, generating thermally induced predetermined breaking locations in the semiconductor layer sequence between the single diode elements using first laser radiation, arranging the semiconductor wafer on a carrier, and connecting the semiconductor wafer to the carrier, the single diode elements being at least partially separated from one another at the thermally induced predetermined breaking locations, wherein thermally induced predetermined breaking locations are generated in the carrier using second laser radiation so that the carrier has a plurality of carrier elements connected to one another, and wherein the carrier elements are separated from one another at the predetermined breaking locations by a connecting process.