公开(公告)号：US20160276554A1

公开(公告)日：2016-09-22

申请号：US15168218

申请日：2016-05-30

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L33/54

CPC classification number: H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

公开(公告)号：US20160247788A1

公开(公告)日：2016-08-25

申请号：US15045426

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Yi-Ru Huang ,  Chih-Ming Shen ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/54 ,  H01L33/58 ,  H01L33/00 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.

Abstract translation: 本发明涉及一种高压发光二极管（HV LED）及其制造方法。 在基板上形成串联，并联或串联并联的多个LED管芯。 LED芯片的一部分的第一半导体层的侧表面与衬底的侧表面对准，使得在LED管芯和衬底的边缘之间不保留露出衬底的空间，衬底的比例 被LED芯片覆盖的面积增加，即，每单位面积的发光面积增加，HV LED的光提取效率提高。

公开(公告)号：US20160240732A1

公开(公告)日：2016-08-18

申请号：US15045264

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L33/10

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract translation: 发光部件包括外延结构，粘合层，第一反射层，第二反射层，阻挡层，第一电极和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 粘合剂层设置在外延结构的第二半导体层上。 第一反射层设置在粘合剂层上。 第二反射层设置在第一反射层上并延伸到粘合剂层上。 第二反射层的投影面积大于第一反射层的投影面积。 阻挡层设置在第二反射层上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。

公开(公告)号：US20160190390A1

公开(公告)日：2016-06-30

申请号：US15064578

申请日：2016-03-08

Applicant: Genesis Photonics Inc.

Inventor： Yun-Li Li ,  Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/58

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

公开(公告)号：US20160118561A1

公开(公告)日：2016-04-28

申请号：US14733957

申请日：2015-06-08

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Wei Hung ,  Meng-Ting Tsai ,  Yu-Feng Lin

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a circuit structure of a flip-chip light emitting diode. It is provided for assembling of the flip-chip light emitting diode. Each flip-chip light emitting diode has at least two electrodes. The circuit structure defines a light emitting surface on a surface of a substrate, and the light emitting surface is provided with a plurality of reflective and conductive surfaces. The reflective and conductive surface is used for assembling of the electrodes of the flip-chip light emitting diode. At least one flip-chip light emitting diode is connected in series, parallel or series-parallel on the light emitting surface, wherein the total area of the reflective and conductive surface accounts for 80% to 99% of the area of the light emitting surface. Accordingly, the circuit structure of the flip-chip light emitting diode can efficiently improve the luminous efficiency of flip-chip light emitting diode device by adding a proportion of the area of the reflective conduction surfaces on the substrate of the flip-chip light emitting diode.

Abstract translation: 本发明涉及倒装芯片发光二极管的电路结构。 提供用于组装倒装芯片发光二极管。 每个倒装芯片发光二极管具有至少两个电极。 电路结构限定了衬底表面上的发光表面，并且发光表面设置有多个反射和导电表面。 反射和导电表面用于组装倒装芯片发光二极管的电极。 至少一个倒装芯片发光二极管在发光表面上串联，并联或串联平行连接，其中反射和导电表面的总面积占发光表面面积的80％至99％ 。 因此，倒装芯片发光二极管的电路结构可以通过在倒装芯片发光二极管的基板上添加反射导电表面积的一部分来有效地提高倒装芯片发光二极管器件的发光效率 。

公开(公告)号：US20160104815A1

公开(公告)日：2016-04-14

申请号：US14877948

申请日：2015-10-08

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/22 ,  H01L33/48 ,  H01L33/38 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。

公开(公告)号：US20160067728A1

公开(公告)日：2016-03-10

申请号：US14944238

申请日：2015-11-18

Applicant: Genesis Photonics Inc.

Inventor： Tai-Cheng Tsai ,  Gwo-Jiun Sheu ,  Chin-Hua Hung ,  Po-Jen Su

IPC: B05B12/08 ,  B05D1/02

CPC classification number: B05B12/084 ,  B05B12/008 ,  B05B12/12 ,  B05B15/555 ,  B05D1/02

Abstract: A method of forming a layer of glue on a work piece includes: spraying the glue on the work piece; obtaining specification data of the glue by measuring a weight of the glue being sprayed on the work piece; and adjusting the spraying amount of the glue in real time according to the specification data of the glue.

Abstract translation: 在工件上形成胶水层的方法包括：将胶水喷涂在工件上; 通过测量喷涂在工件上的胶水的重量来获得胶水的规格数据; 并根据胶水的规格数据实时调整胶水喷涂量。

公开(公告)号：US20160049555A1

公开(公告)日：2016-02-18

申请号：US14918580

申请日：2015-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

公开(公告)号：US09236542B1

公开(公告)日：2016-01-12

申请号：US14582207

申请日：2014-12-24

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/00 ,  H01L33/58 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56

Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of λ/4n, λ is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.

Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及布置在所述透明导光结构上的第一防反射膜，其中所述第一抗反射膜的厚度为λ/ 4n的奇数倍，λ是从所述发光单元经过所述封装单元的光的波长 ，n为第一防反射膜的折射率。

公开(公告)号：US09229065B2

公开(公告)日：2016-01-05

申请号：US13836181

申请日：2013-03-15

Applicant: GENESIS PHOTONICS INC

Inventor： Tai-Wei Wu ,  Tai-Cheng Tsai ,  Hsin-Hung Lin ,  Ping-Tsung Tsai ,  Pei-Yi Huang ,  Gwo-Jiun Sheu ,  Shou-Wen Hsu ,  Yun-Li Li

IPC: G01J1/00 ,  G01R31/44 ,  G01R31/26 ,  G01J1/42

CPC classification number: G01R31/44 ,  G01J2001/4252 ,  G01R31/2635

Abstract: A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate.

Abstract translation: 公开了一种包括具有光电转换功能的基板和探测装置的发光二极管芯片的检测装置。 基板被设计成承载至少一个发光二极管芯片。 探测装置包括电源和至少两个导电元件。 导电元件的两端分别电连接到发光二极管芯片和电源，以使得发光二极管芯片能够发射光束。 一些光束从发光二极管芯片朝向基板发射，使得由发光二极管芯片发射的光束被基板转换成电信号。