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    Refractory metal capped low resistivity metal conductor lines and vias
    31.
    发明授权
    Refractory metal capped low resistivity metal conductor lines and vias 失效
    耐火金属封盖的低电阻金属导线和通孔

    公开(公告)号：US5976975A

    公开(公告)日：1999-11-02

    申请号：US113917

    申请日：1998-07-10

    申请人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    发明人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    IPC分类号： H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/015 ,  Y10S257/915 ,  Y10S438/959

    摘要： Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below lmtorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    摘要翻译： 用难熔金属覆盖低电阻率金属导体线或通孔允许有效地使用化学机械抛光技术，因为在化学机械抛光期间难熔金属的硬度降低的磨损特性不会划伤，腐蚀或涂抹。 使用低电阻率金属或合金的物理气相沉积（例如，蒸发或准直溅射）以及随后的难熔金属的化学气相沉积（CVD）和随后的平坦化的组合来产生优异的导电线和通孔。 在通过CVD施加难熔金属帽时改变SiH4与WF6的比率允许将钨控制并入钨覆盖层中。 准直溅射允许在电介质中的开口中形成难熔金属衬垫，其适合作为铜基金属化的扩散阻挡层以及CVD钨。 理想地，为了更快地扩散金属如铜，通过两步准直溅射工艺产生衬垫，其中第一层在相对低的真空压力下沉积，其中定向沉积占主导地位（例如，低于1mtorr），并且在较高真空下沉积第二层 散射沉积占主导地位的压力（例如高于1mTorr）。 对于诸如CVD钨的难熔金属，可以在较高的真空压力下使用准直溅射在一个步骤中创建衬垫。

    Tungsten liner process for simultaneous formation of integral contact studs and interconnect lines
    33.
    发明授权
    Tungsten liner process for simultaneous formation of integral contact studs and interconnect lines 失效
    用于同时形成整体接触柱和互连线的钨衬工艺

    公开(公告)号：US5434451A

    公开(公告)日：1995-07-18

    申请号：US5961

    申请日：1993-01-19

    申请人： Hormazdyar M. Dalal ,  Kevin J. Hutchings ,  Hazara S. Rathore

    发明人： Hormazdyar M. Dalal ,  Kevin J. Hutchings ,  Hazara S. Rathore

    IPC分类号： H01L21/28 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522 ,  H01L23/485 ,  H01L21/44

    CPC分类号： H01L21/76876 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7688 ,  H01L21/76885 ,  H01L21/76897 ,  H01L2924/0002

    摘要： Tungsten studs and tungsten lined studs that make low resistance thermally stable ohmic or Schottky contacts to active devices on a semiconductor substrate are made by first defining a triplex metallurgical structure. The triplex metallurgical structure includes an ohmic layer, a barrier layer and a sacrificial layer. Then, a blanket layer of insulator is deposited and polished, or etched, or both, until the stud metallurgy is exposed. The sacrificial layer is then etched out, leaving holes self-aligned to the contacts and to the ohmic and the barrier layers. A blanket layer of CVD tungsten is then deposited and the substrate is polished, or etched, or both, to remove excess tungsten. The metal contact studs can be simultaneously formed with patterned interconnection lines which are self-aligned to each other and also to the contact studs.

    摘要翻译： 通过首先限定三重金属结构，制造对半导体衬底上的有源器件进行低电阻热稳定欧姆或肖特基触点的钨柱和钨衬里螺柱。 三重冶金结构包括欧姆层，阻挡层和牺牲层。 然后，绝缘体的绝缘层被沉积和抛光或蚀刻或两者，直到螺柱冶金暴露。 然后蚀刻掉牺牲层，留下孔与触点和欧姆层和阻挡层自对准。 然后沉积CVD层的CVD钨，并抛光或蚀刻衬底或两者以去除多余的钨。 金属接触柱可以同时形成图案化的互连线，它们彼此自对准，也可以与接触螺柱形成。

    Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD
    35.
    发明授权
    Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD 失效
    使用PVD和CVD形成耐火金属封盖的低电阻率金属导体线和通孔

    公开(公告)号：US5403779A

    公开(公告)日：1995-04-04

    申请号：US928335

    申请日：1992-08-12

    申请人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    发明人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    IPC分类号： H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L21/48

    CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/015 ,  Y10S257/915 ,  Y10S438/959

    摘要： Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    摘要翻译： 用难熔金属覆盖低电阻率金属导体线或通孔允许有效地使用化学机械抛光技术，因为在化学机械抛光期间难熔金属的硬度降低的磨损性质不会划伤，腐蚀或涂抹。 使用低电阻率金属或合金的物理气相沉积（例如，蒸发或准直溅射）以及随后的难熔金属的化学气相沉积（CVD）和随后的平坦化的组合来产生优异的导电线和通孔。 在通过CVD施加难熔金属帽时改变SiH4与WF6的比率允许将钨控制并入钨覆盖层中。 准直溅射允许在电介质中的开口中形成难熔金属衬垫，其适合作为铜基金属化的扩散阻挡层以及CVD钨。 理想地，为了更快地扩散金属如铜，通过两步准直溅射工艺产生衬垫，其中第一层在相对低的真空压力下沉积，其中定向沉积占主导地位（例如，低于1mTorr），并且第二层沉积在较高的 散射沉积占主导地位的真空压力（例如高于1mTorr）。 对于诸如CVD钨的难熔金属，可以在较高的真空压力下使用准直溅射在一个步骤中创建衬垫。