Abstract:
An antenna is fabricated using an M-type hexaferrite, such as a tin (Sn) and zinc (Zn) substituted M-type strontium hexaferrite (Sn/Zn-substituted SrM: SrFe12−2xZnxSnxO19), thereby enabling antenna miniaturization, broad bandwidth, and high gain. In one embodiment, an antenna system has a substrate and a chip antenna formed on the substrate. The system also has a conductive radiator contacting the chip antenna, and the chip antenna comprises an M-type strontium hexaferrite for which Fe cations are substituted with tin (Sn) and zinc (Zn) to achieve soft magnetic properties for the antenna. Thus, the coercivity and permeability are lower and higher, respectively, than those of pure SrM. Such fabricated hexaferrite chip antennas have broadband characteristics and show good radiation performance at various frequencies, including in the GHz frequency range.
Abstract:
A method for fabricating a semiconductor device includes sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening on a substrate including a lower pattern, forming a trench exposing the lower pattern in the interlayer insulating layer using the hard mask pattern, forming a liner layer including a first part formed along sidewalls and a bottom surface of the trench and a second part formed along a top surface of the hard mask pattern, forming a sacrificial pattern exposing the second part of the liner layer in the trench, removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern, and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.
Abstract:
Disclosed are a copolymeric polyester resin composition having outstanding color stability (transparency) and a production method therefor. The copolymeric polyester resin composition comprises: between 95 and 99.99 percent by weight of a copolymeric polyester resin having a structure which is obtained by the copolymerization of a dicarboxylic acid component and a diol component that comprises isosorbide, and in which there is repetition of a dicarboxylic acid moiety derived from the dicarboxylic acid component and a diol moiety derived from the diol component; and between 0.01 and 5 percent by weight of an antioxidant selected from the group consisting of hindered phenol-based antioxidants, phosphite-based antioxidants, thioether-based antioxidants and mixtures thereof.
Abstract:
A system and method for state synchronization between a base station and a mobile station in a mobile communication system. A count value indicative of a state change of the base station is received. The received current count value is compared with a previous count value previously received and stored. If the current count value is different from the previous count value, the mobile station performs a network entry procedure with the base station.
Abstract:
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.
Abstract:
In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.
Abstract:
A redox flow battery. A metal-ligand coordination compound including an aromatic ligand that contains an electron withdrawing group is used as the catholyte and/or the anolyte so that a redox flow battery having high energy density and excellent charge/discharge efficiency may be provided.
Abstract:
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
Abstract:
Provided is an uninterruptible direct current (DC) power supply system, which includes a first connection unit electrically connected to a DC power conversion system which converts prevailing AC power into the DC power, a second connection unit which is electrically connected to the load and supplies the DC power to the load, an auxiliary power supply charged by the DC power, and an uninterruptible control unit which supplies the DC power supplied from the DC power conversion system normally connected to the first connection unit to the load through the second connection unit, charges the auxiliary power supply, and controls power to be continuously supplied to the load while perfectly cutting off electrical connection between the DC power conversion system and the auxiliary power supply when the DC power conversion system is disconnected from the first connection unit, is damaged, or short-circuits.
Abstract:
A redox flow battery includes a positive electrode electrolyte and a negative electrode electrolyte, each of which includes a metal-ligand coordination complex, in which a metal of a metal-ligand coordination complex of the positive electrode electrolyte is different from a metal of a metal-ligand coordination complex of the negative electrode electrolyte. Due to use of different metals in the positive and negative electrode electrolytes, the redox flow battery has high energy density and high charge and discharge efficiency.