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103 条记录 (耗时 0.048 秒)

    Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition
    35.
    发明授权
    Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition 有权
    抗蚀剂膜，抗蚀剂涂层掩模坯料和使用抗蚀剂膜形成抗蚀剂图案的方法，以及化学放大型抗蚀剂组合物

    公开(公告)号：US08614033B2

    公开(公告)日：2013-12-24

    申请号：US13367512

    申请日：2012-02-07

    申请人： Tomotaka Tsuchimura ,  Takeshi Inasaki ,  Hiroo Takizawa

    发明人： Tomotaka Tsuchimura ,  Takeshi Inasaki ,  Hiroo Takizawa

    IPC分类号： G03F1/20 ,  G03C5/00

    CPC分类号： G03F1/50 ,  G03F1/76 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392

    摘要： A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R1 represents a hydrocarbon group, R2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.

    摘要翻译： 通过使用含有（A）具有酚羟基的氢原子被下述通式（I）表示的基团取代的结构的高分子化合物的化学扩增型抗蚀剂组合物形成的抗蚀剂膜，（B） 在用光化学射线或辐射照射时产生酸的化合物和有机溶剂，并且膜厚度为10-200nm。 其中，R1表示烃基，R2表示氢原子或烃基，Ar表示芳基。 R 1还可以与Ar结合形成也可含有杂原子的环。 *表示与酚羟基的氧原子的结合位置。

    Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition
    37.
    发明授权
    Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition 有权
    光化射线敏感或辐射敏感性树脂组合物，以及使用该组合物的光化射线敏感或辐射敏感膜和图案形成方法

    公开(公告)号：US08574814B2

    公开(公告)日：2013-11-05

    申请号：US13528477

    申请日：2012-06-20

    申请人： Takeshi Inasaki ,  Tomotaka Tsuchimura

    发明人： Takeshi Inasaki ,  Tomotaka Tsuchimura

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  G03F7/20

    CPC分类号： C08F212/08 ,  G03F1/50 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

    摘要： An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition.The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

    摘要翻译： 本发明的目的是提供一种能够形成具有高分辨率和优异形状的独立线图案的光化射线敏感或辐射敏感性树脂组合物，并且显示出优异的包括粗糙度特性的抗蚀剂性能，并提供光化学光敏或 辐射敏感膜和使用该组合物的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含含有至少一个酚羟基的化合物（P）和至少一个其中酚羟基的氢原子被下列通式表示的基团取代的基团 式（1）（式中的相应符号表示与权利要求书和说明书中相同的定义）。

    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION
    39.
    发明申请
    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION 有权
    丙烯酸敏感或辐射敏感性树脂组合物，以及使用组合物的丙烯酸类敏感或辐射敏感性膜和图案形成方法

    公开(公告)号：US20130004888A1

    公开(公告)日：2013-01-03

    申请号：US13528477

    申请日：2012-06-20

    申请人： Takeshi INASAKI ,  Tomotaka TSUCHIMURA

    发明人： Takeshi INASAKI ,  Tomotaka TSUCHIMURA

    IPC分类号： C08F212/08 ,  G03F1/78 ,  G03F1/00 ,  G03F1/76 ,  G03F1/50 ,  G03F7/20

    CPC分类号： C08F212/08 ,  G03F1/50 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

    摘要： An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition.The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

    摘要翻译： 本发明的目的是提供一种能够形成具有高分辨率和优异形状的独立线图案的光化射线敏感或辐射敏感性树脂组合物，并且显示出优异的包括粗糙度特性的抗蚀剂性能，并提供光化学光敏或 辐射敏感膜和使用该组合物的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含含有至少一个酚羟基的化合物（P）和至少一个其中酚羟基的氢原子被下列通式表示的基团取代的基团 式（1）（式中的相应符号表示与权利要求书和说明书中相同的定义）。