公开(公告)号：US11932934B2

公开(公告)日：2024-03-19

申请号：US17941137

申请日：2022-09-09

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/54 ,  C23C14/0605 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3467 ,  H01J37/3455 ,  H01J2237/002 ,  H01J2237/332

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US20230121513A1

公开(公告)日：2023-04-20

申请号：US18068469

申请日：2022-12-19

申请人： APPLIED MATERIALS, INC.

发明人： Kartik B. Shah ,  Satish Radhakrishnan ,  Karthik Ramanathan ,  Karthikeyan Balaraman ,  Adolph Miller Allen ,  Xinyuan Chong ,  Mitrabhanu Sahu ,  Wenjing Xu ,  Michael Sterling Jackson ,  Weize Hu ,  Feng Chen

IPC分类号： G05B13/02 ,  G05B13/04

摘要： Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.

公开(公告)号：US20230002885A1

公开(公告)日：2023-01-05

申请号：US17941137

申请日：2022-09-09

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/06 ,  C23C14/35

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US20200255938A1

公开(公告)日：2020-08-13

申请号：US16787569

申请日：2020-02-11

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/35 ,  C23C14/06

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US10541169B2

公开(公告)日：2020-01-21

申请号：US15593502

申请日：2017-05-12

申请人： Applied Materials, Inc.

发明人： Chong Jiang ,  Lei Jing ,  Mingte Liu ,  Adolph Miller Allen ,  Michael W. Johnson ,  Pallavi Zhang ,  Michael D. Armacost

IPC分类号： H01L21/683

摘要： Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.

公开(公告)号：US20180051368A1

公开(公告)日：2018-02-22

申请号：US15600247

申请日：2017-05-19

申请人： Applied Materials, Inc.

发明人： Jingjing Liu ,  Zhong Qiang Hua ,  Adolph Miller Allen ,  Michael W. Stowell ,  Srinivas D. Nemani ,  Chentsau Ying ,  Bhargav Citla ,  Viachslav Babayan ,  Andrej Halabica

IPC分类号： C23C14/06 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  H01L21/02

CPC分类号： C23C14/0605 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/354 ,  C23C14/541 ,  C23C14/542 ,  H01J37/32724 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3467 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/0332 ,  H01L21/31144

摘要： A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.

公开(公告)号：USD797067S1

公开(公告)日：2017-09-12

申请号：US29524557

申请日：2015-04-21

申请人： APPLIED MATERIALS, INC.

设计人： Fuhong Zhang ,  William Johanson ,  Yu Liu ,  Adolph Miller Allen ,  Brij Datta ,  Keith A. Miller

公开(公告)号：US09460959B1

公开(公告)日：2016-10-04

申请号：US14958459

申请日：2015-12-03

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC分类号： B08B6/00 ,  H01L21/768 ,  B08B7/00 ,  B08B3/00 ,  B08B5/00 ,  B08B9/00 ,  B08B9/027

CPC分类号： H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

摘要： Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。

公开(公告)号：US20160222503A1

公开(公告)日：2016-08-04

申请号：US15007181

申请日：2016-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Mohammad Kamruzzaman Chowdhury ,  Zhenbin Ge ,  Adolph Miller Allen

IPC分类号： C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/3492 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/52 ,  C23C14/542 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/347 ,  H01J37/3473

摘要： A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

摘要翻译： 一种处理衬底的方法包括：使用由惰性气体形成的第一等离子体和第一量的功率来溅​​射靶材料一段时间; 基于所述惰性气体的流量，所述第一功率量和所述第一时间量的乘积确定第一计数器; 使用由包含反应性气体和惰性气体的处理气体形成的第二等离子体和第二量的功率来溅​​射金属化合物材料第二时间量; 基于处理气体的流量，第二量的功率和第二时间量的乘积确定第二计数器; 确定第三个计数器; 以及将金属化合物层沉积到预定数量的基板上，其中基于第三计数器调整每个基板的沉积时间。

公开(公告)号：US09343664B2

公开(公告)日：2016-05-17

申请号：US14677761

申请日：2015-04-02

申请人： Applied Materials, Inc.

发明人： Roman Gouk ,  Steven Verhaverbeke ,  Alexander Kontos ,  Adolph Miller Allen ,  Kevin Moraes

IPC分类号： B44C1/22 ,  H01L43/12 ,  H01F41/34 ,  H01L21/285 ,  H01L21/308

CPC分类号： H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

摘要： A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

摘要翻译： 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。