公开(公告)号：US20240376597A1

公开(公告)日：2024-11-14

申请号：US18660759

申请日：2024-05-10

Applicant: ASM IP Holding B.V.

Inventor： Fan Gao ,  Krishnaswamy Mahadevan ,  Peipei Gao ,  Xing Lin ,  Jingxuan Lyu

IPC: C23C16/448 ,  C23C16/52 ,  C30B25/14 ,  H01L21/02

Abstract: A liquid precursor container is provided. The liquid precursor container includes an inner container, an outer container, and a baffle member. The inner container has an inner base portion, an inner intermediate portion extending upwards from the inner base portion, and an inner lid portion coupled to the inner base portion by the inner intermediate portion. The outer container has an outer base portion spaced apart from the inner base portion of the inner container and an outer intermediate portion extending upwards from the outer base portion and about the inner intermediate portion of the inner container. The baffle member is arranged between the inner intermediate portion of the inner container and the outer intermediate portion of the outer container, extends upwards from the outer base portion of the outer container, and terminates between the inner lid portion and the inner base portion of the inner container.

公开(公告)号：US12112938B2

公开(公告)日：2024-10-08

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: B08B5/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02046 ,  B08B5/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/335

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US12006572B2

公开(公告)日：2024-06-11

申请号：US17060507

申请日：2020-10-01

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45582 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20240175138A1

公开(公告)日：2024-05-30

申请号：US18518393

申请日：2023-11-22

Applicant: ASM IP HOlding B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Xing Lin ,  Arun Murali ,  Gregory Deye ,  Frederick Aryeetey ,  Amir Kajbafvala ,  Caleb Miskin ,  Alexandros Demos

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67253

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

公开(公告)号：US20240112930A1

公开(公告)日：2024-04-04

申请号：US18476117

申请日：2023-09-27

Applicant: ASM IP Holding, B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Wentao Wang ,  Kai Zhou ,  Kishor Patil ,  Han Ye ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/67 ,  B23K26/03 ,  B23K26/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  G05D23/19

CPC classification number: H01L21/67115 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/0643 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/483 ,  C23C16/52 ,  G05D23/1931 ,  H01L21/67109

Abstract: A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

公开(公告)号：US20240071805A1

公开(公告)日：2024-02-29

申请号：US18238577

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Peipei Gao ,  Wentao Wang ,  Aniket Chitale ,  Xing Lin ,  Alexandros Demos ,  Yanfu Lu

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67069

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

公开(公告)号：US20230002895A1

公开(公告)日：2023-01-05

申请号：US17810094

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC: C23C16/458 ,  C23C16/455

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

公开(公告)号：US20220367175A1

公开(公告)日：2022-11-17

申请号：US17875907

申请日：2022-07-28

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20210310125A1

公开(公告)日：2021-10-07

申请号：US17352011

申请日：2021-06-18

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44 ,  H01J37/32

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US11053591B2

公开(公告)日：2021-07-06

申请号：US16055532

申请日：2018-08-06

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.