公开(公告)号：US08917750B2

公开(公告)日：2014-12-23

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US20140203329A1

公开(公告)日：2014-07-24

申请号：US14123738

申请日：2011-06-03

申请人： Yu Saitoh ,  Masaya Okada ,  Yusuke Yoshizumi ,  Makoto Kiyama ,  Masaki Ueno ,  Koji Katayama ,  Takao Nakamura

发明人： Yu Saitoh ,  Masaya Okada ,  Yusuke Yoshizumi ,  Makoto Kiyama ,  Masaki Ueno ,  Koji Katayama ,  Takao Nakamura

IPC分类号： H01L29/66 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/30621 ,  H01L21/3085 ,  H01L21/3086 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7788 ,  H01L29/7789

摘要： Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface of the stack is inclined at an angle ranging from 5 to 40 degrees with respect to a reference axis indicating a c-axis direction of hexagonal group III nitride. An axis normal to the plane R1 and the axis form an angle smaller than the angle an axis normal to the plane R2 and the axis form. The oxygen concentration of the channel layer is lower than 1×1017 cm−3. It becomes possible to avoid increase in carrier concentration of the channel layer caused by the oxygen addition, thereby reducing leakage current via the channel layer in the transistor.

摘要翻译： 本发明提供一种氮化物电子器件，其具有通过防止载流子浓度在沟道层中增加而允许减少泄漏的结构。 半导体堆叠的倾斜表面和主表面分别沿着第一和第二参考平面R1，R2延伸。 堆叠的主表面相对于表示六方晶III族氮化物的c轴方向的参考轴线以5至40度的角度倾斜。 与平面R1和轴垂直的轴线形成比垂直于平面R2的轴线和轴线的角度小的角度。 通道层的氧浓度低于1×1017cm-3。 可以避免由氧添加引起的沟道层的载流子浓度增加，从而减小晶体管中的沟道层的漏电流。

公开(公告)号：US08693515B2

公开(公告)日：2014-04-08

申请号：US13050330

申请日：2011-03-17

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/223

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08675393B2

公开(公告)日：2014-03-18

申请号：US13636258

申请日：2011-03-18

申请人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

发明人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C2213/72 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： Provided is a method for driving a non-volatile memory element in which a variable resistance element including a first electrode, a second electrode, and a variable resistance layer capable of reversibly changing between a high resistance state and a low resistance state with application of electrical signals having different polarities is connected in series with a current steering element having bidirectional rectifying characteristics with respect to an applied voltage. After the non-volatile memory element is manufactured, the resistance value of the variable resistance layer is reduced from a resistance value in the initial resistance state higher than that in the high resistance state by applying, to the non-volatile memory element, a voltage pulse having the polarity identical to that of the voltage pulse for changing the variable resistance layer from the low resistance state to the high resistance state in the normal operations.

摘要翻译： 提供一种用于驱动非易失性存储元件的方法，其中包括第一电极，第二电极和可变电阻层的可变电阻元件，所述可变电阻元件能够通过施加电而在高电阻状态和低电阻状态之间可逆地变化 具有不同极性的信号与具有相对于施加电压的双向整流特性的电流导向元件串联连接。 在制造非易失性存储元件之后，通过向非易失性存储元件施加电压，可变电阻层的电阻值比初始电阻状态中的电阻值高于高电阻状态的电阻值 脉冲具有与用于在正常操作中将可变电阻层从低电阻状态改变为高电阻状态的电压脉冲的极性相同的脉冲。

公开(公告)号：US20130314975A1

公开(公告)日：2013-11-28

申请号：US13983855

申请日：2012-02-07

申请人： Koji Katayama ,  Takeshi Takagi

发明人： Koji Katayama ,  Takeshi Takagi

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C13/004 ,  G11C29/50008 ,  G11C2013/0045 ,  G11C2013/0083 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2418 ,  H01L28/20 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

摘要： A method for programming a nonvolatile memory element includes: decreasing a resistance value of a variable resistance element in an initial state, by applying an initialization voltage pulse to a series circuit in which a load resistor having a first resistance value is connected in series with the variable resistance element and a MSM diode; applying, after the decreasing, a write voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a second resistance value lower than the first resistance value; and applying, after the decreasing, an erase voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a third resistance value lower than the first resistance value.

摘要翻译： 一种用于非易失性存储元件的编程方法包括：通过向串联电路施加初始化电压脉冲来降低初始状态下的可变电阻元件的电阻值，其中具有第一电阻值的负载电阻器与 可变电阻元件和MSM二极管; 在可变电阻元件的电阻值变为低于第一电阻值的第二电阻值之后，在减小之后向串联电路施加写入电压脉冲; 以及在所述可变电阻元件的电阻值变为低于所述第一电阻值的第三电阻值之后，在所述减小之后向所述串联电路施加擦除电压脉冲。

公开(公告)号：US08508976B2

公开(公告)日：2013-08-13

申请号：US12994910

申请日：2010-04-23

申请人： Koji Katayama ,  Takeshi Takagi

发明人： Koji Katayama ,  Takeshi Takagi

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/003 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/56 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1683

摘要： Provided is a nonvolatile memory element which has a small variation in operation and allow stable operation. The nonvolatile memory element includes: a first electrode (102); a second electrode (106); a variable resistance layer (105) which is formed between the electrodes (102 and 106) and is connected to the electrodes (102 and 106), and which reversibly changes between a high resistance state and a low resistance state according to a polarity of a voltage applied between the electrodes (102 and 106); and a fixed resistance layer (104) which has a resistance value that is 0.1 and 10 times as large as a resistance value of the variable resistance layer in the high resistance state, the fixed resistance layer (104) being formed between the electrodes (102 and 106) and being electrically connected to at least a part of the variable resistance layer (105).

摘要翻译： 提供了一种非易失性存储元件，其具有小的操作变化并且允许稳定的操​​作。 非易失性存储元件包括：第一电极（102）; 第二电极（106）; 形成在所述电极（102和106）之间并连接到所述电极（102和106）的可变电阻层（105），并且根据所述电极（102和106）的极性在高电阻状态和低电阻状态之间可逆地变化 施加在电极（102和106）之间的电压; 和固定电阻层（104），其电阻值是高电阻状态下的可变电阻层的电阻值的0.1和10倍，固定电阻层（104）形成在电极（102）之间 和106），并且电连接到可变电阻层（105）的至少一部分。

公开(公告)号：US08309946B2

公开(公告)日：2012-11-13

申请号：US12935455

申请日：2009-07-22

申请人： Satoru Mitani ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Ryoko Miyanaga ,  Satoru Fujii ,  Takeshi Takagi

发明人： Satoru Mitani ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Ryoko Miyanaga ,  Satoru Fujii ,  Takeshi Takagi

IPC分类号： H01L47/00

CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

摘要： A resistance variable element of the present invention comprises a first electrode (103), a second electrode (107), and a resistance variable layer which is interposed between the first electrode (103) and the second electrode (107) to contact the first electrode (103) and the second electrode (107), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode (103) and the second electrode (107), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode (107) comprising platinum having minute hillocks (108).

摘要翻译： 本发明的电阻可变元件包括第一电极（103），第二电极（107）和介于第一电极（103）和第二电极（107）之间的电阻变化层，以接触第一电极 （103）和第二电极（107），电阻变化层被配置为响应于施加在第一电极（103）和第二电极（107）之间的具有不同极性的电信号而改变，电阻变化层包括 氧缺乏的过渡金属氧化物层，以及包含具有分开的小丘（108）的铂的第二电极（107）。

公开(公告)号：US08306082B2

公开(公告)日：2012-11-06

申请号：US12846361

申请日：2010-07-29

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.

摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包覆层，第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

公开(公告)号：US20120170353A1

公开(公告)日：2012-07-05

申请号：US13379463

申请日：2011-06-28

申请人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

发明人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

摘要： A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).

摘要翻译： 根据本发明的非易失性存储器件的编程方法包括从多个存储单元（11）中检测过低电阻单元的步骤（S101）; 将负载电阻器（121）的电阻值改变为小于第一电阻值的第二电阻值的步骤（S103）; 以及通过对包括过低电阻单元的串联电路和具有第二电阻值的负载电阻器（121）施加电压脉冲，使包含在过低电阻单元中的可变电阻元件（105）移位 到具有大于第一低电阻状态的电阻值的第二高电阻状态（S104）。

公开(公告)号：US20110175201A1

公开(公告)日：2011-07-21

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L29/20

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。