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    Adipic acid compositions
    31.
    发明授权
    Adipic acid compositions 有权
    己二酸组成

    公开(公告)号：US08669393B2

    公开(公告)日：2014-03-11

    申请号：US12966783

    申请日：2010-12-13

    申请人： Thomas R. Boussie ,  Eric L. Dias ,  Zachary M. Fresco ,  Vincent J. Murphy ,  James Shoemaker ,  Raymond Archer ,  Hong Jiang

    发明人： Thomas R. Boussie ,  Eric L. Dias ,  Zachary M. Fresco ,  Vincent J. Murphy ,  James Shoemaker ,  Raymond Archer ,  Hong Jiang

    IPC分类号： C07C69/74

    CPC分类号： C07C255/04 ,  C07D223/10 ,  C08G63/00

    摘要： Disclosed are compositions of matter comprising an adipic acid product of formula (1) wherein R is independently a salt-forming ion, hydrogen, hydrocarbyl, or substituted hydrocarbyl, and at least one constituent selected from the group consisting of formula (2) wherein R is as defined above and each of R1 is, independently, H, OH, acyloxy or substituted acyloxy provided, however, that at least one of R1 is OH, and formula (3) wherein R is as above defined and R1 is OH, acyloxy or substituted acyloxy. Also disclosed are compositions of matter comprising at least about 99 wt % adipic acid and least two constituents selected from the group consisting of formula (2) and formula (3), above.

    摘要翻译： 公开了包含式（1）的己二酸产物的组合物，其中R独立地为成盐离子，氢，烃基或取代的烃基，以及选自式（2）的至少一种成分，其中R R 1独立地是H，OH，酰氧基或取代的酰氧基，然而，R 1中的至少一个是OH，和式（3）其中R如上所定义，R 1是OH，酰氧基 或取代的酰氧基。 还公开了包含至少约99重量％己二酸和至少两种选自上述式（2）和式（3）的组分的物质组合物。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    33.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08343866B2

    公开(公告)日：2013-01-01

    申请号：US13251952

    申请日：2011-10-03

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在导电区域之后形成覆盖层时，掩模层阻止在电介质区域上形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电，半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    35.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US07749881B2

    公开(公告)日：2010-07-06

    申请号：US11132841

    申请日：2005-05-18

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括 常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

    Polymer libraries on a substrate, method of forming polymer libraries on a substrate and characterization methods with same
    37.
    发明授权
    Polymer libraries on a substrate, method of forming polymer libraries on a substrate and characterization methods with same 失效
    衬底上的聚合物文库，在衬底上形成聚合物文库的方法及其表征方法

    公开(公告)号：US06828096B1

    公开(公告)日：2004-12-07

    申请号：US09567598

    申请日：2000-05-10

    申请人： Thomas R. Boussie ,  Martin Devenney

    发明人： Thomas R. Boussie ,  Martin Devenney

    IPC分类号： C12Q168

    CPC分类号： B82Y25/00 ,  B01J19/0046 ,  B01J2219/00351 ,  B01J2219/0059 ,  B01J2219/00592 ,  B01J2219/00599 ,  B01J2219/0065 ,  B01J2219/00659 ,  B01J2219/00702 ,  B01J2219/00745 ,  B01J2219/00754 ,  C01B13/185 ,  C40B40/18 ,  C40B50/08 ,  C40B60/14

    摘要： This invention relates to a method to characterize an array of polymeric materials comprising: depositing unsilanizable material onto a silanizable substrate in at least 10 regions, thereafter contacting the substrate with an organosilane agent thereby silanizing the substrate but not the unsilanizable material in said regions, optionally, partially or completely removing the unsilanizable material, depositing at least 10 polymeric materials onto said regions, and characterizing the materials. This invention also relates to method for forming an array of polymeric materials to be characterized onto a substrate comprising: (a) selecting ten or more polymers, (b) dissolving or suspending each polymer in a separate liquid, and (c) depositing a uniform amount of each of the ten or more polymer containing liquids onto a substrate in individual hydrophilic and/or hydrophobic regions.

    摘要翻译： 本发明涉及一种表征聚合物材料阵列的方法，包括：在至少10个区域中将不可硅化的材料沉积在可硅烷化的基底上，然后使基底与有机硅烷试剂接触，从而使基底硅烷化，而不是所述区域中的不可硅化的材料，任选地 部分或完全去除不可消解的材料，在所述区域上沉积至少10种聚合物材料，并表征材料。 本发明还涉及形成要表征在基材上的聚合物材料阵列的方法，其包括：（a）选择十种或更多种聚合物，（b）将每种聚合物溶解或悬浮在单独的液体中，和（c） 在单独的亲水和/或疏水区域中的十种或更多种含聚合物的液体中的每一种在基材上的量。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    40.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08193090B2

    公开(公告)日：2012-06-05

    申请号：US13192777

    申请日：2011-07-28

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/7685 ,  B82Y30/00 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/288 ,  H01L21/31 ,  H01L21/76834

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括 常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。