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    Plasma-assisted nitrogen surface-treatment
    31.
    发明授权
    Plasma-assisted nitrogen surface-treatment 失效
    等离子辅助氮表面处理

    公开(公告)号：US07465362B2

    公开(公告)日：2008-12-16

    申请号：US10513607

    申请日：2003-05-07

    Applicant: Devendra Kumar ,  Satyendra Kumar

    Inventor： Devendra Kumar ,  Satyendra Kumar

    IPC: C23C8/36

    CPC classification number: B82Y30/00 ,  C23C8/02 ,  C23C8/36

    Abstract: Methods and systems (10) for plasma-assisted nitrogen surface-treatments are provided. The method can include subjecting a gas (24) to electromagnetic radiation (26) in the presence of a plasma catalyst (100, 120, 140) to initiate a plasma containing nitrogen. The surface region of an object can be exposed to the plasma for a period of time sufficient to transfer at least some of the nitrogen from the plasma to the object through the surface region.

    Abstract translation: 提供了等离子体辅助氮表面处理的方法和系统（10）。 该方法可以包括在等离子体催化剂（100,120,140）的存在下使气体（24）进行电磁辐射（26）以引发含有氮的等离子体。 物体的表面区域可以暴露于等离子体足以将至少一些氮从等离子体传递到物体的时间段通过表面区域。

    Plasma-assisted engine exhaust treatment
    34.
    发明申请
    Plasma-assisted engine exhaust treatment 审中-公开
    等离子辅助发动机排气处理

    公开(公告)号：US20060233682A1

    公开(公告)日：2006-10-19

    申请号：US10513606

    申请日：2003-05-07

    Applicant: Kuruvilla Cherian ,  Devendra Kumar ,  Satyendra Kumar

    Inventor： Kuruvilla Cherian ,  Devendra Kumar ,  Satyendra Kumar

    IPC: B01J19/08

    CPC classification number: B01J19/088 ,  B01D53/92 ,  B01D2258/01 ,  B01D2259/806 ,  B01D2259/818 ,  B01J2219/0883 ,  B01J2219/0892 ,  F01N3/0892

    Abstract: Methods and apparatus are provided for plasma-assisted engine exhaust treatment. In one embodiment, an engine exhaust treatment system includes at least one conduit with an inlet portion (215), an outlet portion (216), an intermediate portion (205), and at least one plasma cavity (210). The inlet portion is configured to connect to an engine block (510) and receive an exhaust gas. The outlet portion emits the exhaust gas after plasma treatment. The intermediate portion conveys the exhaust gas from the inlet portion to the outlet portion. In one embodiment, one or more plasma cavities (342, 344, 346) are located proximate to the inlet portion for treating the exhaust gas. The system also includes an electromagnetic radiation source (340) connected to the cavities for supplying radiation to the cavities, wherein the radiation has a frequency less than about 333 GHz. Exhaust gas treatments that use plasma catalysts (70, 170) are also provided.

    Abstract translation: 提供了等离子体辅助发动机排气处理的方法和装置。 在一个实施例中，发动机排气处理系统包括具有入口部分（215），出口部分（216），中间部分（205）和至少一个等离子体腔（210）的至少一个管道。 入口部分被配置成连接到发动机缸体（510）并接收废气。 出口部分在等离子体处理后排出废气。 中间部分将废气从入口部分输送到出口部分。 在一个实施例中，一个或多个等离子体空腔（342,344,346）位于入口部分附近以用于处理废气。 该系统还包括连接到空腔的电磁辐射源（340），用于向空腔提供辐射，其中辐射具有小于约333GHz的频率。 还提供了使用等离子体催化剂（70,170）的废气处理。

    Plasma-assisted coating
    35.
    发明申请
    Plasma-assisted coating 审中-公开
    等离子体辅助涂层

    公开(公告)号：US20060228497A1

    公开(公告)日：2006-10-12

    申请号：US11384104

    申请日：2006-03-17

    Applicant: Satyendra Kumar ,  Devendra Kumar ,  Kuruvilla Cherian ,  Phillip Rotman ,  Ramesh Peelamedy

    Inventor： Satyendra Kumar ,  Devendra Kumar ,  Kuruvilla Cherian ,  Phillip Rotman ,  Ramesh Peelamedy

    IPC: H05H1/02 ,  H05H1/24

    CPC classification number: C23C16/452 ,  B82Y30/00 ,  C23C16/40 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/4607

    Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various coating processes. In one embodiment, the surface of an object can be coated by forming a plasma in a cavity by subjecting a gas to an amount of electromagnetic radiation power in the presence of a plasma catalyst and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object to form a coating. Various plasma catalysts are also provided. Coatings can include any material, for example, carbon nanotubes, BaTiO3, Cr2O3, hafnium oxide, 3Al2O3.2SiO2, Al2O3, SiAlON, MgAl2O4, TiN, and TiO2.

    Abstract translation: 提供了用于点燃，调节和维持用于各种涂覆过程的等离子体的方法和装置。 在一个实施例中，可以通过在等离子体催化剂的存在下对气体进行一定量的电磁辐射能量并且在等离子体中加入至少一种涂层材料来在空腔中形成等离子体来涂覆物体的表面。 允许材料沉积在物体的表面上以形成涂层。 还提供了各种等离子体催化剂。 涂层可以包括任何材料，例如碳纳米管，BaTiO 3，Cr 2 O 3，氧化铪，3Al 2， 3SiO 2，Al 2 O 3，SiAlON，MgAl 2 O 3，N 2 O 3， O 3，TiN和TiO 2。

    Plasma-assisted gas production
    36.
    发明申请
    Plasma-assisted gas production 失效
    等离子体辅助天然气生产

    公开(公告)号：US20050253529A1

    公开(公告)日：2005-11-17

    申请号：US10513220

    申请日：2003-05-07

    Applicant: Satyendra Kumar ,  Devendra Kumar

    Inventor： Satyendra Kumar ,  Devendra Kumar

    IPC: B01J19/08 ,  B01J19/12 ,  C01B3/34 ,  H01J7/24 ,  H05H1/24

    CPC classification number: C01B3/342 ,  B01J19/088 ,  B01J19/126 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0835 ,  B01J2219/0869 ,  B01J2219/0886 ,  B01J2219/0892 ,  C01B2203/04 ,  C01B2203/0861 ,  C01B2203/1041 ,  H05H1/46 ,  H05H2001/4607

    Abstract: Methods and apparatus are provided for plasma-assisted gas production. In one embodiment, a gas, which includes at least one atomic or molecular species, can flow into a cavity (305). The gas can be subjected to electromagnetic radiation having a frequency less than about 333 GHz (optionally in the presence of a plasma catalyst) such that a plasma (310) forms in the cavity (305). A filter (315) capable of passing the atomic or molecular species, but preventing others from passing, can be in fluid communication with the cavity (305). In this way, the selected species can be extracted and collected, for storage or immediate use.

    Abstract translation: 提供了等离子体辅助气体生产的方法和装置。 在一个实施方案中，包括至少一种原子或分子种类的气体可以流入空腔（305）。 气体可以经受频率小于约333GHz的电磁辐射（任选在存在等离子体催化剂的情况下），使得在空腔（305）中形成等离子体（310）。 能够使原子或分子物质通过但防止其他物质通过的过滤器（315）可以与空腔（305）流体连通。 以这种方式，可以提取和收集所选择的物种，用于储存或立即使用。

    Suppression of fluid-borne noise
    39.
    发明授权
    Suppression of fluid-borne noise 失效
    抑制流体噪声

    公开(公告)号：US06658118B1

    公开(公告)日：2003-12-02

    申请号：US09445373

    申请日：1999-12-06

    Applicant: Satyendra Kumar ,  Devendra Kumar ,  Michael J. Dougherty

    Inventor： Satyendra Kumar ,  Devendra Kumar ,  Michael J. Dougherty

    IPC: A61F1106

    CPC classification number: F16L55/0333 ,  G10K11/161 ,  G10K11/178

    Abstract: Apparatus for suppressing fluid-borne noise in a fluid conduit (12 or 12a) that includes a vibration sensor (36, 36a or 36b) for operative coupling to the conduit for providing an electrical sensor signal as a function of fluid pressure fluctuations in the conduit. A piezoelectric actuator (40, 40a or 40b) is adapted to be mounted on the conduit for imparting pressure fluctuations to fluid in the conduit. An electronic controller (38, 38a or 38b) is responsive to the sensor signal for energizing the actuator 180° out of phase with fluid pressure fluctuations sensed by the sensor. The sensor may be either closely coupled to the actuator, or separate from the actuator and disposed upstream of the actuator with respect to the direction of fluid flow through the conduit. The sensor in the preferred embodiments of the invention comprises a piezoelectric sensor, and the actuator comprises a stack of piezoelectric elements.

    Abstract translation: 一种用于抑制流体导管（12或12a）中的流体噪声的装置，其包括用于与导管有效耦合的振动传感器（36,36a或36b），用于提供作为导管中的流体压力波动的函数的电传感器信号 。 压电致动器（40,40a或40b）适于安装在导管上，以对管道中的流体施加压力波动。 电子控制器（38,38a或38b）响应于传感器信号，用于通过传感器感测到的流体压力波动与致动器180°异相激励。 传感器可以紧密地联接到致动器，或者与致动器分离，并且相对于通过导管的流体流动的方向设置在致动器的上游。 本发明优选实施例中的传感器包括压电传感器，并且致动器包括一叠压电元件。

    Thermal processing chamber for heating and cooling wafer-like objects
    40.
    发明授权
    Thermal processing chamber for heating and cooling wafer-like objects 失效
    用于加热和冷却晶片状物体的热处理室

    公开(公告)号：US06307184B1

    公开(公告)日：2001-10-23

    申请号：US09351586

    申请日：1999-07-12

    Applicant: Jeffrey D. Womack ,  Vuong P. Nguyen ,  Devendra Kumar ,  Jack S. Kasahara ,  Sokol Ibrani

    Inventor： Jeffrey D. Womack ,  Vuong P. Nguyen ,  Devendra Kumar ,  Jack S. Kasahara ,  Sokol Ibrani

    IPC: F27B514

    CPC classification number: H01L21/67109

    Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

    Abstract translation: 一种处理室和使用该处理室来热处理晶片状物体的方法。 该室包括双壁壳体，基座式加热器，用于输送冷却气体和排出废气的内部通道，独立可变的气体引入模式和用于密封腔室的可移动门。 该室被设计成允许对晶片状物体进行原位冷却，并提供用于精确优化该冷却的装置。 这些方法提供了在可以控制温度，温度变化率，气体成分和这些变量的变化的相对定时的环境中处理晶片状物体以实现晶片期望的材料性质的环境 样的物体或包含在该晶片状物体上的膜中。

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