公开(公告)号：US20110124186A1

公开(公告)日：2011-05-26

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/265 ,  G21K5/10

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

公开(公告)号：US20100273322A1

公开(公告)日：2010-10-28

申请号：US12765346

申请日：2010-04-22

申请人： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin

发明人： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L29/66803

摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.

摘要翻译： 公开了一种用于对具有非平面表面的衬底进行保形加工的技术。 该技术包括几个阶段。 在第一阶段中，有效地处理衬底的某些表面。 在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。 在第三阶段期间，处理衬底的其它表面。 在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。 在一些实施例中，第二阶段包括在衬底上沉积膜。

公开(公告)号：US20100255665A1

公开(公告)日：2010-10-07

申请号：US12644103

申请日：2009-12-22

申请人： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

发明人： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

IPC分类号： H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

CPC分类号： H01J37/32623 ,  C23C14/48

摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

公开(公告)号：US20100252531A1

公开(公告)日：2010-10-07

申请号：US12645638

申请日：2009-12-23

申请人： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

发明人： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC分类号： B44C1/22 ,  C23C16/513

CPC分类号： B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：US20100240201A1

公开(公告)日：2010-09-23

申请号：US12760249

申请日：2010-04-14

申请人： Heyun YIN ,  George D. Papasouliotis ,  Vikram Singh

发明人： Heyun YIN ,  George D. Papasouliotis ,  Vikram Singh

IPC分类号： H01L21/425

CPC分类号： H01L21/76846 ,  H01L21/76849 ,  H01L21/76867

摘要： A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

摘要翻译： 第一种和第二种被植入到可以是铜的衬底的导体中。 可以顺序地或至少部分地同时植入第一种和第二种。 通过第二种物质的存在来防止第一种在基底导体内的扩散。 在一个具体实例中，第一种是硅，第二种是氮，尽管其它组合是可能的。

公开(公告)号：US20100155898A1

公开(公告)日：2010-06-24

申请号：US12341489

申请日：2008-12-22

申请人： Helen L. Maynard ,  Vikram Singh ,  Hans-Joachim L. Gossman

发明人： Helen L. Maynard ,  Vikram Singh ,  Hans-Joachim L. Gossman

IPC分类号： H01L29/36 ,  H01L21/30

CPC分类号： H01L21/26506 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/31706 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/2686 ,  H01L29/6659 ,  H01L29/7848 ,  H01L29/7849

摘要： A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing a series of ion implantation steps at predetermined implant energies to implant carbon ions deep within the semiconductor structure to create a strain layer. The strain layer is annealed using a millisecond anneal process. Subsequent ion implantation steps are used to dope the source/drain region, and the source/drain extension with phosphorus ions, so that the doped regions remain above the strain layer. A second millisecond anneal step activates the source/drain region and the source/drain extension. The strain layer enhances carrier mobility within a channel region of the semiconductor structure, while also preventing diffusion of P within the structure.

摘要翻译： 公开了一种用于增强半导体结构的沟道区域中的拉伸应力的方法。 该方法包括以预定的注入能量执行一系列离子注入步骤，以在半导体结构内部深入注入碳离子以产生应变层。 使用毫秒退火工艺对应变层进行退火。 随后的离子注入步骤用于用磷离子掺杂源极/漏极区域和源极/漏极延伸部分，使得掺杂区域保持在应变层上方。 第二毫秒退火步骤激活源极/漏极区域和源极/漏极延伸部分。 应变层增强了半导体结构的沟道区内的载流子迁移率，同时也防止了P在结构内的扩散。

公开(公告)号：US20090129777A1

公开(公告)日：2009-05-21

申请号：US11942225

申请日：2007-11-19

申请人： Vikram Singh

发明人： Vikram Singh

IPC分类号： H04B10/20

CPC分类号： H04L43/0852

摘要： The present invention provides distance-proof N-pass Auto Negotiation systems and methods for Gigabit Ethernet. The present invention distance proofs Auto Negotiation. No matter the distance between two nodes configured according to the systems and methods of the present invention, the link at either end of the two nodes will only come up once each end has negotiated, resolved its link partner's capabilities, and received a similar success signal from the remote node.

摘要翻译： 本发明提供了用于千兆以太网的距离保护N-pass自动协商系统和方法。 本发明距离证明自动谈判。 无论根据本发明的系统和方法配置的两个节点之间的距离，两个节点的任一端的链路只有在每个端点协商后才会出现，解决了其链路伙伴的能力，并且接收到类似的成功信号 从远程节点。

公开(公告)号：US07476849B2

公开(公告)日：2009-01-13

申请号：US11371907

申请日：2006-03-10

申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC分类号： H01J49/40 ,  G01N27/26 ,  G01N33/00

CPC分类号： H01J49/40 ,  H01J37/32935

摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

公开(公告)号：US20090001890A1

公开(公告)日：2009-01-01

申请号：US12098781

申请日：2008-04-07

申请人： Vikram Singh ,  Timothy J. Miller ,  Bernard G. Lindsay

发明人： Vikram Singh ,  Timothy J. Miller ,  Bernard G. Lindsay

IPC分类号： H05H1/46

CPC分类号： C23C14/345 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32412 ,  H01L21/32136

摘要： An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage.

摘要翻译： 一种用于处理衬底的设备包括脉冲电源，其生成具有第一功率电平的第一周期和具有第二功率电平的第二周期的波形。 等离子体源在第一周期期间产生第一等离子体，在第二周期期间产生第二等离子体。 第一等离子体可具有比第二等离子体更高的等离子体密度。 偏置电压电源在与支撑衬底的压板电连接的输出端产生偏置电压波形。 具有第一电压和第二电压的偏置电压波形可以耦合到衬底。 第一电压可能具有比第二电压更多的负电位。

公开(公告)号：US20060289799A1

公开(公告)日：2006-12-28

申请号：US11376522

申请日：2006-03-15

申请人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

发明人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

IPC分类号： H01J37/08

CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.