公开(公告)号：US20060029748A1

公开(公告)日：2006-02-09

申请号：US11180597

申请日：2005-07-14

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45542 ,  H01J37/32082 ,  H01L21/28562 ,  H01L21/76843

摘要： A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is-plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.

摘要翻译： 一种沉积方法，用于通过提供包括金属，氮和碳的第一气体和将第一气体还原到处理容器中来形成薄膜，所述处理容器内设有用于保持处理过的基板的基板保持台， 沉积方法包括将第一工艺气体供应到处理容器中的第一步骤，以及供给第二工艺气体的第二步骤，使得第二工艺气体被设置在处理容器中的等离子体激发部件等离子体激发 。 通过改变施加到等离子体激发部分的射频功率来控制薄膜中的金属，氮和碳中的至少一个的含量。

公开(公告)号：US5989345A

公开(公告)日：1999-11-23

申请号：US069987

申请日：1998-04-30

申请人： Tatsuo Hatano

发明人： Tatsuo Hatano

IPC分类号： C23C14/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/4485 ,  C23C16/45561 ,  C23C16/52

摘要： A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least one gas storing section having a predetermined volume and to be filled with the process gas, a carrier-gas introducing pipe connecting the carrier gas source to the process chamber to introduce the carrier gas from the carrier gas source to the process chamber, a process-gas releasing pipe connected to the process-gas source, a process-gas filling circuit having at least one pipe which connects the at least one gas storing section to the process-gas releasing pipe and is provided with at least one open/shut valve, a process gas releasing circuit having at least one pipe which connects the gas storing section to the carrier-gas introducing pipe and is provided with at least one open/shut valve, a controlling section for controlling not only a communication state between the process-gas releasing pipe and the gas storing section but also a communication state between the carrier-gas introducing pipe and the gas storing section, by switchover of the open/shut valves attached to the process-gas filling circuit and the process gas releasing circuit.

摘要翻译： 一种处理气体供应装置，用于向处理室提供处理气体，其中使用处理气体的预定处理被施加到其中的物体，其包括用于提供处理气体的处理气体源，填充有载气源 具有载气，至少一个具有预定体积的气体储存部分并且被处理气体填充;载气引入管，其将载气源连接到处理室，以将载气从载气源引入到 处理室，连接到处理气体源的处理气体释放管，处理气体填充回路，其具有将至少一个气体存储部分连接到处理气体释放管的至少一个管道，并且设置在 至少一个打开/关闭阀，一个工艺气体释放回路，其具有至少一个管道，该管道将气体存储部分连接到载气引入管道，并且设有至少一个开/关阀 e，控制部分，用于不仅控制处理气体释放管和气体存储部之间的连通状态，而且还通过开/关阀的切换来控制载气导入管和气体存储部之间的连通状态 连接到处理气体填充回路和处理气体释放回路。

公开(公告)号：US5963834A

公开(公告)日：1999-10-05

申请号：US992178

申请日：1997-12-17

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45561 ,  C23C16/45574 ,  Y10S438/905

摘要： A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

摘要翻译： 一种形成CVD膜的方法，包括以下步骤：将待处理的物体加载到处理室中，并将物体定位在处理室中的支撑基座上，将物体定位在处理室中，引入处理气体 从对应的气体供给源通过相应的气体导入管道进入处理室，并且通过化学气相沉积法在处理室中的物体上形成膜，在将物体形成在物体上之后，将物体从处理室中卸下， 在从处理室卸载物体之后，对处理室内部进行干洗，并且在干燥处理室内部之后，经由相应的气体导入管将惰性气体引入到室中以清除作为 气体导入管中的残留物和室内。

公开(公告)号：US5704214A

公开(公告)日：1998-01-06

申请号：US634164

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

发明人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

IPC分类号： B01D53/34 ,  B01D8/00 ,  B01D53/58 ,  B01D53/72 ,  B01J3/00 ,  B01J3/02 ,  C23C16/44 ,  F28F3/02 ,  H01L21/205 ,  H01L21/285

CPC分类号： B01D8/00 ,  C23C16/4412 ,  F28F3/02 ,  Y02C20/30 ,  Y10S417/901

摘要： A trap body is removably attached in the housing inserted in that portion of the exhaust passage which is situated on the upstream side of a vacuum pump, and has cooling fins for cooling the tramp materials in the exhaust gas brought into contact with the cooling means, thereby liquefying the tramp materials. Therefore, the tramp materials, such as unaffected process gases, products of reaction, etc., contained in the exhaust gas flowing through the exhaust passage, are cooled and liquefied when they are touched by the trap body cooled by the cooling unit, and adhere to the surface of the trap body. Thus, the tramp materials in the exhaust gas can be removed lest they damage the vacuum pump on the downstream side or close up the exhaust passage.

摘要翻译： 捕集体可拆卸地安装在插入在位于真空泵的上游侧的排气通道的该部分中的壳体中，并且具有用于冷却与冷却装置接触的废气中的垃圾材料的冷却片， 从而液化流质物料。 因此，流经排气通路的排气中含有的未受影响的处理气体，反应产物等的流质物质被被冷却单元冷却的捕集体接触时被冷却和液化，并粘附 到陷阱体的表面。 因此，废气中的垃圾物质可以被去除，以免损坏下游侧的真空泵或关闭排气通道。

公开(公告)号：US08859422B2

公开(公告)日：2014-10-14

申请号：US13359138

申请日：2012-01-26

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20130203250A1

公开(公告)日：2013-08-08

申请号：US13566515

申请日：2012-08-03

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  C23C14/02 ,  C23C14/046 ,  C23C16/02 ,  C23C16/045 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.

摘要翻译： 半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态 是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。 该方法还包括在凹槽中形成导电路径的铜。

公开(公告)号：US20120247949A1

公开(公告)日：2012-10-04

申请号：US13433527

申请日：2012-03-29

申请人： Takashi SAKUMA ,  Tadahiro Ishizaka ,  Tatsuo Hatano ,  Shiro Hayashi ,  Toshiaki Fujisato ,  Hiroyuki Yokohara ,  Hiroyuki Toshima

发明人： Takashi SAKUMA ,  Tadahiro Ishizaka ,  Tatsuo Hatano ,  Shiro Hayashi ,  Toshiaki Fujisato ,  Hiroyuki Yokohara ,  Hiroyuki Toshima

IPC分类号： C23C14/34

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/185 ,  C23C14/345 ,  C23C14/5833 ,  C23C14/5873 ,  C23C14/5893 ,  C23C16/509 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873

摘要： A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.

摘要翻译： 一种成膜方法，包括通过在处理室中产生电感耦合等离子体，同时在处理室中引入等离子体产生气体，其中衬底设置在放置台上，通过向金属提供DC电力，在目标衬底上沉积金属薄膜 来自直流电源的目标，以及通过对放置台应用高频偏压。 再溅射方法包括：通过停止来自直流电源的电力供给，通过停止产生电感耦合等离子体，并将高频偏压施加到放置台，同时将等离子体产生气体引入到 所述处理室在所述处理室中形成电容耦合的等离子体，并且通过将所述等离子体产生气体的离子吸附到沉积金属薄膜的目标衬底上。

公开(公告)号：US20120064717A1

公开(公告)日：2012-03-15

申请号：US13230351

申请日：2011-09-12

申请人： Takara KATO ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Osamu Yokoyama

发明人： Takara KATO ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Osamu Yokoyama

IPC分类号： H01L21/768 ,  C23C16/16 ,  C23C16/56 ,  G06F19/00

CPC分类号： H01L23/53238 ,  C23C16/16 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.

摘要翻译： 在CVD-Ru膜形成方法中，在形成Cu膜之前，通过使用羰基钌作为成膜材料的CVD在基板上形成Ru膜。 然后将其上形成上述Ru膜的基板在含氢气氛中退火。

公开(公告)号：US20060008595A1

公开(公告)日：2006-01-12

申请号：US11174532

申请日：2005-07-06

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/32449

摘要： A plurality of gases are prevented from being mixed with each other in a gas supply path when forming a film on a substrate to be processed so as to prevent generation of particles to enable a stable and clean film formation. A film containing metal is formed on a substrate to be processed by supplying a first process gas containing the metal and a second process gas for reducing the first process gas to a process chamber. The first process gas is supplied from a first gas supply passage to the process chamber. The second process gas is supplied from a second gas supply passage to the process chamber and the second process gas is plasma-excited in the process chamber. A first reverse flow preventing gas consisting of H2 or He is supplied to the process chamber from the first gas supply passage when supplying the second process gas.

摘要翻译： 当在待处理的基板上形成膜时，防止多个气体在气体供给路径中彼此混合，以防止颗粒的产生，从而能够形成稳定和清洁的膜。 通过将含有金属的第一工艺气体和用于将第一工艺气体还原到处理室的第二工艺气体，在待加工的衬底上形成含有金属的膜。 第一处理气体从第一气体供应通道供应到处理室。 第二工艺气体从第二气体供应通道供应到处理室，并且第二工艺气体在处理室中被等离子体激发。 当供给第二处理气体时，由第二气体供给通道供给由H 2 H或He组成的第一反向流动防止气体到处理室。

公开(公告)号：US6126994A

公开(公告)日：2000-10-03

申请号：US907007

申请日：1997-08-06

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/203

CPC分类号： C23C16/4481 ,  Y10S427/101

摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

摘要翻译： 一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。