公开(公告)号：US07687813B2

公开(公告)日：2010-03-30

申请号：US11940883

申请日：2007-11-15

申请人： Shuji Nakamura ,  Steven P. DenBaars

发明人： Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/54 ,  H01L33/507 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.

摘要翻译： 一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。 特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或者与包含模制成倒圆锥形的环氧树脂，玻璃，硅或其它材料的成形光学元件组合， 其中进入倒锥体的大部分光线处于临界角内并被提取。 此外，为了从LED更有效地提取光，本发明将LED结束，即将LED在成形光学元件内的位置与常规LED相比旋转大约90°。 本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。 为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。 通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

公开(公告)号：US20100032695A1

公开(公告)日：2010-02-11

申请号：US12536253

申请日：2009-08-05

申请人： Natalie N. Fellows-DeMille ,  Hisashi Masui ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Natalie N. Fellows-DeMille ,  Hisashi Masui ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： F21K9/65 ,  F21V9/08 ,  F21V9/14 ,  F21V9/40 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L25/0753 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01L33/50 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01S5/005 ,  H01S5/34333 ,  H01L2924/00

摘要： A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

摘要翻译： 一种用于发射偏振白光的照明装置，其至少包括用于发射由一个或多个第一波长组成并具有第一偏振方向的初级光的第一光源; 以及至少第二光源，用于发射第一偏振方向的二次光，其包括一个或多个次级波长，其中第一光和次级光被组合以产生偏振的白光。 照明装置还可以包括用于控制初级光的强度的偏振器，其中偏振器的旋转改变其偏振轴相对于第一偏振方向的对准，其改变通过偏振器的初级光的透射，其控制 颜色坐标或白光的色相。

公开(公告)号：US20080251802A1

公开(公告)日：2008-10-16

申请号：US12102612

申请日：2008-04-14

申请人： Michael Iza ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Michael Iza ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for growing an improved quality nitride thin film on a patterned substrate is disclosed, wherein the nitride film is grown at atmospheric pressure. A nitride template is disclosed, comprising a patterned substrate and a one or more nitride layer direct growth off of the patterned substrate, comprising no lateral epitaxial overgrowth regions and a substantially coalesced surface smooth enough for subsequent deposition of light emitting device quality nitride layers onto the surface. A light emitting diode comprising the nitride film is also disclosed.

摘要翻译： 公开了一种用于在图案化衬底上生长改进的优质氮化物薄膜的方法，其中氮化物膜在大气压下生长。 公开了一种氮化物模板，其包括图案化衬底和一个或多个氮化物层直接生长离开图案化衬底，不包括侧向外延生长区域和基本上聚结的表面光滑，足以随后将发光器件质量的氮化物层沉积到 表面。 还公开了包括氮化物膜的发光二极管。

公开(公告)号：US20080149949A1

公开(公告)日：2008-06-26

申请号：US11954163

申请日：2007-12-11

申请人： Shuji Nakamura ,  Steven P. DenBaars

发明人： Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01L21/50 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A lead frame for a transparent and mirrorless light emitting diode (LED). The LED is comprised of a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers. A lead frame supports the III-nitride layers, wherein the III-nitride layers reside on a transparent plate in the lead frame, and the light emitted from the III-nitride layers is transmitted through the transparent plate. A metal mask may be formed on the transparent plate for electrically connecting the III-nitride layers to a lead frame.

摘要翻译： 用于透明和无反射镜的发光二极管（LED）的引线框架。 LED由多个III族氮化物层组成，包括发射光的有源区，除了有源区以外的所有层对于光的发射波长是透明的，使得光被有效地提取到所有的光 的层。 引线框架支撑III族氮化物层，其中III族氮化物层位于引线框架中的透明板上，并且从III族氮化物层发射的光透过透明板。 可以在透明板上形成金属掩模，用于将III族氮化物层电连接到引线框架。

公开(公告)号：US20080128730A1

公开(公告)日：2008-06-05

申请号：US11940885

申请日：2007-11-15

申请人： Natalie N. Fellows ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Natalie N. Fellows ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

摘要： This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

摘要翻译： 本发明涉及用于光电应用的LED灯提取。 更具体地，本发明涉及与用于高效（Al，Ga，In）N的发光二极管应用的优化的光学器件和磷光体层组合的（Al，Ga，In）及其制造方法。 进一步的扩展是与成形光学元件组合的成形高折射率光提取材料的一般组合。

公开(公告)号：US07338828B2

公开(公告)日：2008-03-04

申请号：US11444083

申请日：2006-05-31

申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.

摘要翻译： 生长平面非极性m面III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料生长在合适的衬底上，例如m面硅 碳化物（m-SiC）基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基板，在退火的基板上生长诸如氮化铝（AlN）的成核层，以及生长非极性m面 使用MOCVD在成核层上的III-氮化物外延层。

公开(公告)号：US07220324B2

公开(公告)日：2007-05-22

申请号：US11372914

申请日：2006-03-10

申请人： Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L29/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{10 11}氮化镓（GaN），（2）{10 22}氮化镓 “100”蓝宝石衬底，以及（4）在{1 100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）。

公开(公告)号：US20170327969A1

公开(公告)日：2017-11-16

申请号：US15607319

申请日：2017-05-26

申请人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01L33/16 ,  H01L29/20 ,  H01L29/04 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01S5/343

CPC分类号： C30B25/18 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

公开(公告)号：US09040327B2

公开(公告)日：2015-05-26

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08795440B2

公开(公告)日：2014-08-05

申请号：US13313335

申请日：2011-12-07

申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/02

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。