公开(公告)号：US20050139923A1

公开(公告)日：2005-06-30

申请号：US11022756

申请日：2004-12-28

申请人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

发明人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/10 ,  H01L29/786 ,  H01L31/036 ,  H01L21/00 ,  H01L27/12

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

摘要翻译： 提供了包括被定义为高和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。 有源面积的迁移率可以降低到足以满足半导体器件要求的水平。 有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。 结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

公开(公告)号：US09070680B2

公开(公告)日：2015-06-30

申请号：US13404085

申请日：2012-02-24

申请人： Do-young Kim

发明人： Do-young Kim

IPC分类号： H01L23/36 ,  H01L23/498 ,  H01L23/373 ,  H01L23/522 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L23/4985 ,  H01L21/563 ,  H01L23/36 ,  H01L23/373 ,  H01L23/522 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/831 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/05552

摘要： A chip on film (COF) type semiconductor package is provided. The chip on film (COF) type semiconductor package includes a film, a plurality of leads formed on a surface of the film, a chip adhered to ends of the leads, an underfill layer filled within a space between the chip and the leads, and a heat dissipation layer adhered to an other surface of the film, the heat dissipation layer including a graphite material layer, a protection layer formed on a surface of the graphite material layer to cover the graphite material layer, and an adhesion layer formed on an other surface of the graphite material layer to adhere the heat dissipation layer to the other surface of the film.

摘要翻译： 提供了一种薄膜（COF）型半导体封装。 薄膜（COF）型半导体封装的芯片包括膜，形成在膜的表面上的多个引线，附着到引线的端部的芯片，填充在芯片和引线之间的空间内的底部填充层，以及 所述散热层附着在所述膜的另一个表面上，所述散热层包括石墨材料层，形成在所述石墨材料层的表面上以覆盖所述石墨材料层的保护层和形成在所述石墨材料层上的粘附层 石墨材料层的表面以将散热层粘附到膜的另一个表面。

公开(公告)号：US08442223B2

公开(公告)日：2013-05-14

申请号：US11357132

申请日：2006-02-21

申请人： Ki-ho Kim ,  Eun-kyung Kang ,  Do-young Kim

发明人： Ki-ho Kim ,  Eun-kyung Kang ,  Do-young Kim

IPC分类号： H04N7/167 ,  H04N7/173 ,  H04N7/16

CPC分类号： H04N7/17318 ,  H04N21/6118 ,  H04N21/6168 ,  H04N21/8355

摘要： A video device for determining whether a digital broadcasting channel through a point of deployment (POD) is reproduced, includes a memory; a communicator to communicate with the POD; a controller which stores a first copy control information (CCI) value with respect to a first digital broadcasting channel in the memory, if converting the first digital broadcasting channel into an analog broadcasting channel, and sets the first CCI value stored in the memory to a second CCI value with respect to a second digital broadcasting channel if the second CCI value is not received through the communicator from the POD and if converting the analog broadcasting channel into the second digital broadcasting channel.

摘要翻译： 用于确定通过部署点（POD）的数字广播频道是否被再现的视频装置包括存储器; 与POD沟通的沟通者; 如果将第一数字广播频道转换为模拟广播频道，则将存储器中的第一数字广播频道的第一复制控制信息（CCI）值存储在存储器中，并将存储在存储器中的第一CCI值设置为 如果没有通过来自POD的通信器接收到第二CCI值，并且如果将模拟广播信道转换成第二数字广播信道，则相对于第二数字广播信道的第二CCI值。

公开(公告)号：US20120273928A1

公开(公告)日：2012-11-01

申请号：US13404085

申请日：2012-02-24

申请人： Do-young Kim

发明人： Do-young Kim

IPC分类号： H01L23/34 ,  H01L21/50

CPC分类号： H01L23/4985 ,  H01L21/563 ,  H01L23/36 ,  H01L23/373 ,  H01L23/522 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/831 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/05552

摘要： A chip on film (COF) type semiconductor package is provided. The chip on film (COF) type semiconductor package includes a film, a plurality of leads formed on a surface of the film, a chip adhered to ends of the leads, an underfill layer filled within a space between the chip and the leads, and a heat dissipation layer adhered to an other surface of the film, the heat dissipation layer including a graphite material layer, a protection layer formed on a surface of the graphite material layer to cover the graphite material layer, and an adhesion layer formed on an other surface of the graphite material layer to adhere the heat dissipation layer to the other surface of the film.

摘要翻译： 提供了一种薄膜（COF）型半导体封装。 薄膜（COF）型半导体封装的芯片包括膜，形成在膜的表面上的多个引线，附着到引线的端部的芯片，填充在芯片和引线之间的空间内的底部填充层，以及 所述散热层附着在所述膜的另一个表面上，所述散热层包括石墨材料层，形成在所述石墨材料层的表面上以覆盖所述石墨材料层的保护层和形成在所述石墨材料层上的粘附层 石墨材料层的表面以将散热层粘附到膜的另一个表面。

公开(公告)号：US20090298268A1

公开(公告)日：2009-12-03

申请号：US12457586

申请日：2009-06-16

申请人： Jang-yeon Kwon ,  Min-koo Han ,  Se-young Cho ,  Kyung-bae Park ,  Do-young Kim ,  Min-cheol Lee ,  Sang-myeon Han ,  Takashi Noguchi ,  Young-soo Park ,  Ji-sim Jung

发明人： Jang-yeon Kwon ,  Min-koo Han ,  Se-young Cho ,  Kyung-bae Park ,  Do-young Kim ,  Min-cheol Lee ,  Sang-myeon Han ,  Takashi Noguchi ,  Young-soo Park ,  Ji-sim Jung

IPC分类号： H01L21/336 ,  H01L21/205

CPC分类号： H01L21/02532 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02354 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/31608 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo∥/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

摘要翻译： 提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。 使用ICP-CVD在低温下形成多晶硅薄膜。 在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。 使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2栅极绝缘层。 多晶硅具有约3000A以上的大晶粒尺寸。 SiO 2的界面陷阱密度可以高达lo // / cm2。 具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

公开(公告)号：US20090150143A1

公开(公告)日：2009-06-11

申请号：US12155542

申请日：2008-06-05

申请人： Hyun-woo Kim ,  Jong-mo Sung ,  Mi-suk Lee ,  Do-young Kim ,  Byung-sun Lee

发明人： Hyun-woo Kim ,  Jong-mo Sung ,  Mi-suk Lee ,  Do-young Kim ,  Byung-sun Lee

IPC分类号： G10L21/00 ,  G10L19/00

CPC分类号： G10L19/26 ,  G10L19/0212

摘要： A post-filtering apparatus and method for speech enhancement in a modified discrete cosine transform (MDCT) domain are disclosed. In the apparatus and method, previous and current MDCT coefficients are used for obtaining a speech spectrum coefficient similar to a real speech spectrum, and a convex function is used for transforming the speech spectrum coefficient and obtaining a post-filter coefficient so that difference can increase in the case where the speech spectrum coefficient is small but decrease in the case where the coefficient is large. Then, the post-filter coefficient is applied to the MDCT coefficient. With this configuration, both the current and previous MDCT values are used, so that it is possible to obtain a spectrum coefficient similar to the real speech spectrum and to obtain a more accurate filter coefficient. Further, the coefficient is adaptively transformed through the convex function, thereby enhancing speech quality.

摘要翻译： 公开了一种用于修正的离散余弦变换（MDCT）域中的语音增强的后置滤波装置和方法。 在该装置和方法中，先前和当前的MDCT系数被用于获得类似于真实语音频谱的语音频谱系数，并且使用凸函数来变换语音频谱系数并获得后置滤波器系数，使得差值可以增加 在语音频谱系数小的情况下，在系数大的情况下减少。 然后，将后滤波器系数应用于MDCT系数。 利用该配置，使用当前和先前的MDCT值，使得可以获得与真实语音频谱相似的频谱系数并获得更准确的滤波器系数。 此外，系数通过凸函数自适应地变换，从而提高语音质量。

公开(公告)号：US20080046933A1

公开(公告)日：2008-02-21

申请号：US11758895

申请日：2007-06-06

申请人： Mun-seok KIM ,  Do-young Kim ,  Yong-chun Song

发明人： Mun-seok KIM ,  Do-young Kim ,  Yong-chun Song

IPC分类号： G06F13/00 ,  G06F3/00

CPC分类号： H04N7/163 ,  H04N5/4403 ,  H04N21/4431 ,  H04N21/4854 ,  H04N21/6543

摘要： An image processing apparatus includes a receiving unit which receives an image signal, an image processor which processes the image signal, a storage unit which stores setting information related to processing of the image signal, a controller which controls the image processor to process the image signal with reference to the setting information when an external controlling program comprised in the image signal is executed.

摘要翻译： 图像处理装置包括接收图像信号的接收单元，处理图像信号的图像处理器，存储与图像信号的处理相关的设置信息的存储单元，控制图像处理器处理图像信号的控制器 当执行包括在图像信号中的外部控制程序时参考设置信息。

公开(公告)号：US20070259487A1

公开(公告)日：2007-11-08

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07176488B2

公开(公告)日：2007-02-13

申请号：US10748271

申请日：2003-12-31

申请人： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

发明人： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

摘要翻译： 在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片 以及密封半导体芯片的保护盖。 通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

公开(公告)号：US20060294560A1

公开(公告)日：2006-12-28

申请号：US11384307

申请日：2006-03-21

申请人： Do-young Kim ,  Eun-kyung Kang

发明人： Do-young Kim ,  Eun-kyung Kang

IPC分类号： H04N7/173 ,  H04N7/16

CPC分类号： H04H20/78 ,  H04N7/10

摘要： A cable broadcasting system is provided which includes a cable broadcasting transmitting apparatus and a cable broadcasting receiving apparatus which are connected to a cable network. The cable broadcasting transmitting apparatus includes a broadcasting signal generator, a sensitivity adjusting signal generator which generates a sensitivity adjusting control signal and a transmitter which transmits a cable broadcasting signal and the sensitivity adjusting control signal. The cable broadcasting receiving apparatus includes a sensitivity adjuster which receives the cable broadcasting signal a controller which controls the sensitivity adjuster to adjust sensitivity of the cable broadcasting signal. Thus, a cable broadcasting system, a cable broadcasting transmitting apparatus, a cable broadcasting receiver, an Open Cable broadcasting receiver and a cable card are provided which allow remote adjustment of the sensitivity of a cable broadcasting signal which is supplied to a cable broadcasting receiving apparatus.

摘要翻译： 提供一种有线广播系统，其包括连接到有线网络的有线广播发送装置和有线广播接收装置。 有线广播发送装置包括广播信号发生器，产生灵敏度调节控制信号的灵敏度调整信号发生器和发送有线广播信号的发送器和灵敏度调整控制信号。 有线广播接收装置包括灵敏度调节器，其接收有线广播信号，控制器控制灵敏度调节器来调节有线广播信号的灵敏度。 因此，提供有线广播系统，有线广播发送装置，有线广播接收机，开放有线广播接收机和有线电视卡，其可以远程调整提供给有线广播接收装置的有线广播信号的灵敏度 。